BT151-600 NJSEMI | Alldatasheet
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Technical content
, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Thyristors BT151-600
APPLICATIONS
- For use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor co- ntrol, industrial and domestic lighting, heating and static switching. 3 gate ABSOLUTE MAXIMUM RATINGS(Ta=25t:) ELECTRICAL CHARACTERISTICS (Tc=25'C unless otherwise specified) DIM A B C D F G H J K L Q R S u V mm MIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 SYMBOL VDRM VRRM ll(AV) ll(RMS) ITSM PGM PG<AV> Tj Tstg PARAMETER Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-stage current RMS on-state current Surge non-repetitive on-state current Peak gate power dissipation Average gate power dissipation Operating junction temperature Storage temperature MIN 600 600 100 0.5 125 -45-150 UNIT V V A A A W W SYMBOL IRRM IDRM VTM IGT VGT IH RthQ-c) PARAMETER Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate-trigger current Gate-trigger voltage Holding current Thermal resistance CONDITIONS VRM=VRRM, VRM=VRRM,Tj=125°C VDM-VDRM, VDM=VDRM,Tj=125°C !TM= 23A VD=6V;RL=10Q VD=6V;RL=10n IT= 0.1 A; Gate Open Junction to case MIN MAX 0.02 0.5 0.02 0.5 1.75 1.5 1.6 UNIT mA mA V mA V mA °C/W Quality Semi-Conductors