BT151-500R NJSEMI | Alldatasheet
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Technical content
j£ii£u , U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Thyristors BT151-500R
APPLICATIONS
- For use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor co- ntrol, industrial and domestic lighting, heating and static switching. 506 KAG 1 cathode 2 anode 3 gate ABSOLUTE MAXIMUM RATINGS(Ta=25^C) ELECTRICAL CHARACTERISTICS (Jd=2B'C unless otherwise specified) DIM A B C D F G H J K L R S U V mm M1NH 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 SYMBOL VDRM VRRM IT(AV) Ij(RMS) ITSM PGM PG(AV) Tj Tstg PARAMETER Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-stage current RMS on-state current Surge non-repetitive on-state current Peak gate power dissipation Average gate power dissipation Operating junction temperature Storage temperature MIN 500 500 7.5 120 0.5 125 -45-150 UNIT V V A A A W W SYMBOL IRRM IDRM VTM IGT VGT IH Rthfl-c) PARAMETER Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate-trigger current Gate-trigger voltage Holding current Thermal resistance CONDITIONS VRM=VRRM, VRM=VRRM,Tj=125°C VDM=VDRM, VDM=VDRM,Tj=125°C !TM= 23A VD=12V; IT=0.1A VD=12V;IT=0.1A VD= 12V; IT=0.1A Junction to case MIN MAX 0.02 0.5 0.02 0.5 1.75 1.5 1.6 UNIT mA mA V mA V mA °C/W Quality Semi-Conductors