BT151-500 NJSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 1

Technical content

^>£mi-L.onauctoi , O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Thyristors BT151-500

APPLICATIONS

  • For use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor co- ntrol, industrial and domestic lighting, heating and static switching. SQ&-. KAG 1 cathode 2 anode agate kS .00- 506 ABSOLUTE MAXIMUM RATINGS(Ta=25'C) ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise specified) DIM A B C D F G H J K L R s u V mm MIN 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 1 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 SYMBOL VDRM VRRM Ij(AV) ll(RMS) ITSM PGM Po(AV) Tj Tstg PARAMETER Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-stage current RMS on-state current Surge non-repetitive on-state current Peak gate power dissipation Average gate power dissipation Operating junction temperature Storage temperature MIN 500 500 100 0.5 125 -45-150 UNIT V V A A A W W SYMBOL IRRM IDRM VTM IGT VGT IH Rthfl-c) PARAMETER Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate-trigger current Gate-trigger voltage Holding current Thermal resistance CONDITIONS VRM=VRRM, VRM=VRRM,Tj=125-C VDM=VDRM, VDM=VDRM,Tj=125°C !TM= 23A VD=12V;IT=0.1A VD=12V; IT=0.1A I T= 0.1 A; Gate Open Junction to case MIN MAX 0.02 0.5 0.02 0.5 1.75 1.5 1.6 UNIT mA mA V mA V mA
  • c/w Quality Semi-Conductors