BT136 NJSEMI | Alldatasheet
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<SE.mi-Condu.ctoi. LPioaucti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Triacs TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 BT136 series GENERAL DESCRIPTION Glass passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. PINNING - TO220AB QUICK REFERENCE DATA SYMBOL
- DRM 'r(RMS) 'TSM PARAMETER BT136- BT136- BT136- Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. 500 500F 500G 500 MAX. 600 600F 600G 600 MAX. 800 800F 800G 800 UNIT V A A PIN CONFIGURATION SYMBOL PIN tab
DESCRIPTION
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL "DRM M(RMS) 'TSM I2t dlT/dt 'GM VGM p ~GM PG(AV) ' stq Ti PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature CONDITIONS full sine wave; Tmb < 107 °C full sine wave; T; = 25 °C prior to surge t - 20 ms t= 16.7ms t= 10ms ITM = 6 A; I0 = 0.2 A; dlG/dt = 0.2 A/us T2+G+ T2+G- T2-G- T2-G+ over any 20 ms period MIN. -40 MAX. -500 -600 -800 5001 6001 800 3.1 0.5 150 125 UNIT V A A A A2s A/us A/us A/us A/us A V W W VI Semi-C ondutlors reserves the right in change tot conditions. paranKter limits ;ind package dimensions \\vithotil notice Information furnished by NJ Scmi-C unductors i» believed to he holh accurate and reliable M the time of going to press. However VI Scini-C imdiiciort .iiMiiiKs ihi rcsptnuibility for uny errors or ninivsiiins Jiituvcred in its use NJ Seini-CoinJuih<rs <:n<.'iiur:iaes ri-.n ii'Cf; tn vcrifv ih n 'I:ita-;hcel3 .ire current herbrc placina unhfn .
p ^th j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS full cycle half cycle in free air MIN. TYP. MAX. 3.0 3.7 UNIT K/W K/W KM STATIC CHARACTERISTICS T, = 25 °C unless otherwise stated SYMBOL IOT IL IH VT VGT ID PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS BT136- VD= 12V; IT = 0.1 A T2+G+ T2+G- T2-G- T2-G+ VD=12V; IGT = 0.1 A T2+G+ T2+G- T2-G- T2-G+ VD=12V; IGT = 0.1 A IT = 5A VD = 12V; IT = 0.1 A VD = 400V; IT = 0.1 A; T,= 125°C T^rr' MIN. 0.25 TYP. 1.4 0.7 0.4 0.1 MAX. ...F ...G 100 1.70 1.5 0.5 UNIT mA mA mA mA mA mA mA mA mA V V V mA DYNAMIC CHARACTERISTICS Ti - 25 °C unless otherwise stated SYMBOL dVD/dt dVcom/dt tgt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating voltage Gate controlled turn-on time CONDITIONS BT136- Tj = 125 °C; exponential waveform; gate open circuit VDM = 400 V; T; = 95 'C; I - 4 A- 'T(RMS) H "' dlcom/dt= 1.8 A/ms; gate open circuit 'TM = 6 A; VD = VDRM/max>; IG = 0.1 A;dlG/dt = 5A/ns MIN. 100 ...F ...G 200 TYP. 250 MAX. UNIT V/^is V/^s