BSY17 SIEMENS | Alldatasheet

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25C D MM 823505 OOO4824 a MMSIEG) pH 3cc09 NPN Transistors for Switching Applications BSY 17 D —— BSY 18 SIEMENS AKTIENGESELLSCHAF BSY 62 BSY 63 BSY 17, BSY 18, BSY 62, and BSY 63 are double-diffused epitaxial NPN silicon planar RF transistors in TO 18 case (18 A 3 DIN 41876). Their collectors are electrically connectad to their cases. Transistor BSY 17 corresponds to type 2 N 743, BSY 18 to 2 N 744, BSY 62, group A, to type 2 N 706 A, and BSY 63 to type 2 N 708. The transistors are especially suitable for high-speed logic gate applications. Type Ordering code ° ees BSY 17 60218-Y17 ORN6 8 BSY 18 60218-Y18 — ae BSY62A Q60218-Y62-A ; BSY 62B Q60218-Y62-B 1 BSY 63 a60218-Y63 Bettas Zaeet Approx. weight 0.3 g Dimensions in mm Maximum ratings BSY 17 Bsyis_ | BsY62 | BSY63 Collector-emitter voltage Voeo | 12 15 15 v Collector-base voltage Veao | 20 25 40 v Emitter-base voltage Veno | 5 5 5 v Collector current Ie | 200 200 200 mA Junction temperature i 200 200 200 °C Storage temperature range Tetg 65 to +200 °C Total power dissipation (Toaso=45°C) Piot | 1 \\1 [1 w Thermal resistance Junction to ambient air Pensa | $600 $500 $500 Kw Junction to case Rinse | $160 $160 $150 KW BSY 17 Static characteristics ‘Tom [170 —«([28 «| °c Collector cutoff current (Vcgo=20 V) Teso <100 <1" HA Collector-emitter breakdown voltage (ceo = 10 mA) Vericeo | - >i2 v Emitter-base breakdown voltage (lego = 10 HA) Verso | — >s° v Collector-base breakdown voltage Uceo = 1 HA) Verjcao | — >20 Vv * AQL = 0, 66% 870 .

2186 B-1L

25C D MM 8235605 0004825 5 MMSIEG 25C 04825 O-7=35-OF BSY 17 BSY 18 — SIEMENS AKTIENGESELLSCHAF — BSY 62 BSY 63 Static characteristics BSY 18 Tro [170 [26 |e Collector cutoff current (Vcgo = 20V) Teso <100 (| <1* BA Collector-emitter breakdown voltage . (ceo = 10 mA) Viericeo - >12 v . Emitter-base breakdown voltage (eo = 10 HA) Veareso__| — 2s v Tw [180 [28 | °c Collector cutoff current (Vego = 15 V) Tcao <30 <0.5° pA Collector-emitter breakdown voltage (ceo = 10 mA) Varyceo | ~ >16 v Emitter-base breakdown voltage (ego = 10 pA) a i >s* v Collector-base breakdown voltage (ceo = 1 HA) Vieryceo__| ~ >25 v BSY 63 Toon [150 [25 [rc Collector cutoff current (Ves = 20 V) Teso <15 0.003 | pA Collector cutoff current (Wee = 20 V; Vag = 0.25 V; (<0.025)*| pA Tomb = 125°C) Teev <10 - BA Collector-emitter breakdown voltage (ceo = 10 mA) Viariceo | - >15 v Emitter-base breakdown voltage (ego = 10 HA) Vieryeso | - >e v Collector-base breakdown voltage Ucgo = 1 4A) Viariceo | ~ >40 v * AQL = 0.65% Test circuit for turn-on and turn-off time measurements Duty cycle <2% >300ns 209 a aly Ls i cS 1. —— tle = Sanpling-Ose. Ry802 IN bog sims [500 a faax “oe [ Js0 Ye i Vea uF Voge3V-=t Aue ° ms 87t : 2187 B-12 * .

i 25C D MM 8235605 O0048e2b 2 MESIEG . 25C 04826 04 35:07 ~— aagy 17 BSY 18 “SIEMENS AKTIENGESELLSCHAF BSY 62 BSY 63 : Static characteristics (Ty) = 25°C) BSY 17 Vor Is Te bre Vocsat") Veesat") v mA mA Io/lp v v BsY 18 Vee Ig Ic fee Voceat"! Veesat') v mA mA Toll v v BSY 62 The transistors are grouped according to the DC current gain hee and identified by the code letters “A” or "B”. hee group | Vce Ig Ic fre v mA mA Ie/Ip A 1 0.17 to 0.5 10 20 to 60° B 1 0,033 to 0.33 10 30 to 300° Saturation voltage (/¢ = 10 mA; Ig = 10 mA) Vegsat') = <0.9V Veeeat!! = <0.6" V BsY63 7 Vee Ig I hee v mA mA Tella 1 <0,033 05 >15° 1 0.083 to 0.33 10 30 to 120° Saturation voltage (Ic = 10 mA; Ig=1mA) —Vagsat") = 0.72 (<0.8) V : Vegsat") = <0.4° V Test circuit for storage time (t,) Duty cycle <2% OF 1K@ >a00ns —+h ga00 rn “Tf Veesov OF sag tig ee aba \\ 92 sins 62 | [S009 bo eo Vegeta aur . Nogstov-akt tr 1) The transistor is saturated to such an extent that the DC current gain decreases to hfe = 10. * AQL = 0.65%

2188 B-13 :

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25C D m@ 4235605 0004827 4 MBSIEG ~ 250 04827 | OT 35-OF% — BSY 17 BSY 18 BSY 63 Dynamic characteristics (Tam = 25°C) BSY17 | BSY18 | BSY62 | BSY63 Transition frequency (Ic = 10 mA; Veg = 10 V; f = 100 MHz) fr >280 >280 >280 >300 MHz Collector-base capacitance Switching times: Operating point: Te =10 mA; Ig; =3mA; ton <16 <16 <40 <40 ns [gg = 1.5 mA; RL= 2702 tot <24 <24 <75 <75 ns Tg = 100 mA; Ig, =40 mA; ton 7 7 - - ns =Ip2 = 20 mA; RL=502 tote 25 25 - - ns Ig = Igy = ~Ig2 = 10 mA; RL=1kQ tt | <14 <18 <25 <25 ns ‘Total perm. power dissipation DC current gain hre = f (ic) versus temperature Vee = 1V: Tamp = parameter Prot = 1 (1); Ry = parameter {common emitter configuration) w. 8SY 17, BSY 18, BSY 62, BSY 63 wo BSY 18, BSY 62A, BSY 628 awe ®CTT TTT TTT CTT TTT CrPry rr yy ty a A eee 38 fe (LEE eS UMN TIT TT LEP rrrryy t =Car CIMT I TTS = | wo LPP oo CIM Tae MTT wo CCN TEP CN TTT CPE NTE TTT CUM TT TNA TT LTPP AEP Te LAIN sore TW TT HO ies HH AMA esi NL os ENS TT Po LTV 060 CTT Ne rT CA EE ETN CT PRN ed NCH COIN TIM TTT TTT CUTS ECP AT CTI CTI TNE Th Saeee~Ske CON ETM TT TT NN o COUT COMM TT oo . a ‘00 200° wot 0A . —T — +h ». . : 873

2189 B-14

25C D) MM 8235605 0004828 O MMSIEG “25¢ 04828 0 “T-B5-0F BSY 18 BSY 62 ‘Output characteristics Ic = f (Vce) Output characteristics Ic =f (Vee) Ty = parameter Is = parameter {common emitter configuration) (common emitter configuration) ma BSY 18, BSY 62 ma BSY 18, BSY 62 B CCeea oy aH ec ty Heel tt 4 era | Yeeere TT see PP | Yama Vor 0 | Here 4 45> =—— ee eee 2) 42 | = Za i Pa Peace Va . tA me “EE -- oe L sf aa WAT TT TT 2== een EEE Flatten 72a AEE ti ! = oL LTT TTT Tr) Fy 0 0 mv 0 10 av ee er ‘Collector-emitter saturation voltage Base-emitter saturation voltage Veesat = f (lc): hee = 10 Votaat = (ich: Pee = 10. Tomb = parameter Temp = parameter mA BSY 18, BSY 62 mi BSY 18, BSY 62 10 pee neil = 5 EEE EERE EH a FRE REE EEE EEE a 4 COCeereerer eee * we ee | t wo LET er f ‘FEES Aa Ss FREER ERA GEES a FREE EEE EAA COAL He LIAM ET wo LECT LI rr) SERRE sie sae SESS $s BEERS SEE a FREESE EH PA SERSS oi ee we LO WCET TT w AL LOTT 0 ot 02 08 Oh OB 0 5 0 wv —> Mest Nee set 874 , 2190 c-01 :

25C D MM S235L05 0004829 2 MMSIEG SIEWENS AKTIENGESELLSCHAF . 9 1-307 By Collector current /c = f (Vee) . Vee=1V ; Transition frequency fy = f (lc) {common emitter configuration) Vee = 10 V; f = 100 MHZ; Tam = 25°C eee oe re Ik ee any . Pw LLL TT Ary ' LIT ET | “SSESSSS a= (COI FEEEE AE I ee 7 all wrote A W==S=s5S27 === LTA TTT FREE EHA EEE LTA TT a 2 At we LL LE TTT SHEEP SSS ZL maGaaicene “CCIE FUT FRF-FFAIP EEL CL LOCI oL LETT TT 0 4 08 B 10° 5 8 toma —— My ok Collector cutoff current Collector cutoff current Sua tampartar vers tomperatare woe nee psy 17, BSY 18 we 1 (Tame): Veso = 25 V Bsy 62 ===—=S=— SS =SS== eocenecenee aseece ne SSS =sasce=p== neraeeeeen wee CZ en | SSAA ba whee AO 7 aae9 4ennee wR EEEEEEE] # ZCECEE Rt a Saeaint a eZOCCert tt wl LETT rT rn 0 100 200°6 Oo ao 00° ln — lav - ~. . 875 2191 c~02 an

25¢ ) M™ 8235605 0004830 9 M@ESIEG 25C 04830 D'T- 3507 BSY 18 SIEMENS AKTIENGESELLSCHAF ss BSYG2 Turn-on time ton =f (hres) colt o« capsoitence 1" OmA:Tana 25°C Ca =F (Vesa) Ves = -3 Vip =t Bsy18 9 enero 8 eee SSR eeetiemree ti Cee seo og te (LETT TT er Pc = EReCE Ee BMlicom A Rat CACCCeeece ot SEL LT YT rrr EEE Er th EET . ESHA gcNEEEHHH COT Ci 0 PEPIN TCEEE eT EEE SEER TY Cererere ero MN a FERRE © »CECECCer ee er 0 5 mk —> Vo ly Turn-off time ton =f (lps) Storage time t, = f (lo) ‘Iga = parameter [gz = parameter ns 1c=10MA;Tyy = 25°C = BSY 18. ng 1e= }OMA; Tarn = 26°C BSsY 18 “COT ey "AAA ne HHA Saeeeeeren fH aeeeeuey ze a LEAL ae Ae BaBEEy Any. AV B LTT Ter » LAK Le COCOA VY Le » LODZ Aj] til Aw ae eee mp 47426 ol Coc TT VASE per Bceceriis sLEET TE LETT »>COCCCECC 0 5 1OmA o 5 ‘Oma —rly —ly

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