BSY34 SIEMENS | Alldatasheet

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25C D MM 4235605 0004831 0 MESIEG 7-35-/5 NPN Silicon Planar Transistors BSY 34 BSY 34 and BSY 58 are double diffused epitaxial NPN silicon planar transistors in TO 39 case (5 C 3 DIN 41873). The collectors are electrically connected to the cases. The transistors are intended for use as high-speed switches and in particular for driving magnetic cores. Type Ordering code CEB BSY 34 060218-Y34 BSY 58 060218-Y58 rf 5141 ay 2 Approx. weight 1.6 g Dimensions in mm Maximum ratings BSY 34 BSY58 Collector-emitter voltage Vezo 40 26 v Collector-emitter voltage Vees 60 50 v Collector-base voltage Veso 60 50 v Emitter-base voltage Veso 5 5 Vv Collector current Ic 600 600 mA Base current Is 200 200 mA Junction temperature yj 200 200 °C Storage temperature range Teg -65to+200 | -65to+200 | °c Total power dissipation (Tease45°C) Prot 26 26 w Thermal resistance Junction to ambient air Rina | $220 | $220 | KW Junction to case Rinse $60 $60 KW Static characteristics (Tom) = 25°C; Vee =1V) Type BSY 34 BSY 58 Sg hee Voesat" Veesat"? hee Vacsat"? Veesat"? mA_| Illa v v Ie/Ig v v 1 23 0.62 - 23 0.62 - 10 | 37 07 - 37 0.7 - 1) The transistor is saturated to such an extent that the DC current gain decreases to hfe = 10, * AQL = 0.65% . 877 2193 c-04 .

25C D MM 6235605 O00483e 2 es - ~~ 25C 04832 o-7=, NS oe BSY 34 BSY 58 — SIEMENS AKTIENGESELLSCHAF_ HW. Static characteristics BSY 34 BSY 58 . Tmo [150 [26 [26 °c Collector cutoff current (Veao = 50 V) Tego | <7-104 | <70° <120° nA Collector-emitter breakdown . voltage (ceo = 10 mA) Viaryceo| >40 >25 Vv Collector-emitter breakdown voltage (Ices = 10 pA) Vierices| >60 >50 Vv Collector-base breakdown voltage (Ica = 100 4A) Viericao >60 >50 Vv Emitter-base breakdown voltage (lego = 100 pA) Vierveso! >6 >5 Vv Dynamic characteristics (Tamp = 25°C) Transition frequency (Jc = 30 mA; Vog = 10 V: f = 100 MHz) fr 400 (> 250) | 400 (>260) | MHz Collector-base capacitance (Veao = 10 V) Cceo 4.5 (<6) 4.5 (<6) pF Emitter-base capacitance (Vego = 1 V) Ceo 22 22 pF Switching times Operating point: Ig = 150 mA; Ip) = 15 mA ton 30 35 ns Iga = 15 mA; R= 1502 tot 50 60 | ns Operating point: Tc = 500 mA; Ig, = 50 mA; =Tag = 25 mA; Ve = 15 V R, = 80 Q for BSY 34 (Voc = 40 V) fon, | 30 (<50) | 35 (<65) | ns Ry, = 50 © for BSY 88 (Voc = 26 V) tory 65(<95) | 65(<110) | ns *AQL = 0.65% Test circuit for switching times > 1UF 1k2 ac 4 aot uw Ry coe a ong yh <ins a ie A y% 12 soe | WF Vr 8V ue Yee 878 2194 c-05 .

25C D MM 8235605 0004833 4 MMSIEG' SIEMENS AKTIENGESELLSCHAF . °T~35-/5 BSY 34 BSY 58 Total perm. power dissipation ‘Total perm. power dissipation erations Jerod terra wt Fan ™ parame BSY 34 w™ (iFon~ parameter ey gg SCOTT TT COC ; fete TT Core eee L ae INCE mm CONCEP ; { LT PK | { ERNE a A EEE aN TET Fae PO Rie ET COPS Cer COCO RASC Cy ENE LOCC NEE a ee LOCC (COCCI ACEC Lier RE ROCCE Poe A an <Gegenen COS FN COPS COCCPRSe COCCP PSE »-L ET ETE pL LETTS 0 100 er 200° 0 wos ms Output characteristics Ic = f (Voc) Permissible pulse load Ig= parameter . fies #10: v= parameter (common emitter configuration) Mf BSY 34, BSY 58 Bg 022 BSY 34, BSY 58 nex * GHEE er ole t Having? na Weer oe t ol err RACE TiETH alt bert TT [ Se WOT eee UTI aot ett | Tb ECT i POT Wee EY HHI } ASERRRRREEE oA LAME TT LA LA Lh Coco 1 a 0 P 2, ™ (2195-06 ; 878

esc D M@ 8235605 0004434 & MESIEG. - STEMENS AKTIENGESELLSCHAF > ~ ; BSY 34 W-35-)57 BSY 58 ‘Collector cutoff current Collector cutoff current ‘versus temperature /cao = f (Tams) versus temperature [cao = f (Tams) a Yooo=60V psy 3s a Ve30 = 50V BSY 68 | = | : See ESSSSSeey Seepeerere SS wl EEE | o Cera . * B= EE4e ASS ° BSS sSeS4=5 on oo Ao oo {1 a ee a a LL Che ZLA eCLoPE ZC ee fo ae ee SSS | a or oe oe | Ss | A A ee A ey ZEELECE wT OZ | a Le oa a Pe ee to Poo copa A [=a = sate ios | Ft f= == sate ine | we ttttt rt lc 0 100 00°C 0 mw ore — Tame Tee Collector current fc = f (la) . Input characteristics /a = f (Vee) Vee =1V Veg =1V {common emitter configuration) {common emitter configuration) mA. BSY 34, BSY 58 mA BSY 34, BSY 58 Vo 10? EERE

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asc D MB 6235605 0004835 & mESIEG. _i - : OO ~25c 04835 VT GEIS. Collector-base capacitance: Saturation voltages Eettror testo napacttance Hoe HE I = 10 7 bie = 1 (Veo) BSY 34, BSY 58 man = parameter BSY 34, BSY 58 ! Sw aan 10 eee : cae CVA Zee 1 oT y HASHES See aes ame Crud Set Sa BRS ae 5 | Ce CHIC CLT QUELLE Conn Aeteiirstcceeseee BU a FEE -EHEEHH wl w HIATT ww 0 ‘ot Veo Pay 0 Of 0B f 4 ' roa — “0; — Veesats “CEsat Ie = 160 mA; Voc = 40:V Voc = 40 t 4 I hy bes Ill alli TI A AV LT f Pal x I WAM Il a * All Coil Eiutaallll Hat TT ell 10° 5 5 1?mA =) 1! 5 10% 5 03mA —l5y —h 2197 c-08 881