BSX63

BSX62 CENTRAL | Alldatasheet

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MAXIMUM RATINGS: (TC=25°C) SYMBOL BSX62 BSX63 UNITS Collector-Base Voltage V CBO 60 80 V Collector-Emitter Voltage V CEO 40 60 V Emitter-Base Voltage V EBO 5.0 V Collector Current I C 3.0 A Power Dissipation P D 5.0 W Operating and Storage Junction Temperature T J, Tstg -65 to +200 °C Thermal Resistance ΘJC 35 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO VCB=40V (BSX62) 100 nA ICBO VCB=40V, TC=150°C (BSX62) 100 μA ICBO VCB=60V (BSX63) 100 nA ICBO VCB=60V, TC=150°C (BSX63) 100 μA IEBO VEB=5.0V 100 nA VCE(SAT) IC=1.0A, IB=100mA 0.7 V VCE(SAT) IC=2.0A, IB=200mA 0.8 V VBE(SAT) IC=1.0A, IB=100mA 1.2 V VBE(SAT) IC=2.0A, IB=200mA 1.3 V VBE(ON) VCE=1.0V, IC=100mA 1.0 V VBE(ON) VCE=1.0V, IC=1.0A 1.2 V VBE(ON) VCE=5.0V, IC=2.0A 1.3 V hFE VCE=1.0V, IC=1.0A (BSX62, 63-10) 63 160 hFE VCE=1.0V, IC=1.0A (BSX62, 63-16) 100 250 Cob VCB=10V, IE=0, f=1.0MHz 70 pF fT VCE=10V, IC=200mA, f=100MHz 30 MHz ton IC=1.0A, IB1=IB2=50mA 300 ns toff IC=1.0A, IB1=IB2=50mA 4.0 μs BSX62 BSX63 NPN SILICON TRANSISTOR TO-39 CASE Central Semiconductor Corp. TM R0 (2-April 2008) DESCRIPTION: The CENTRAL SEMICONDUCTOR BSX62, BSX63 types are NPN Silicon Transistors designed for general purpose applications where high collector current is required. MARKING: FULL PART NUMBER

Semiconductor Corp. TM TO-39 CASE - MECHANICAL OUTLINE BSX62 BSX63 NPN SILICON TRANSISTOR R0 (2-April 2008) LEAD CODE: 1) EMITTER 2) BASE 3) COLLECTOR (case) MARKING: FULL PART NUMBER