BSX62 SIEMENS | Alldatasheet

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25C D m@ 82305 0004819 T MMSIEG| yogg-r7 NPN Silicon Planar Transistors BSX 62 _ ——— . BSX 63 . SIEMENS AKTIENGESELLSCHAF ——————— BSX 62 and BSX 63 are epitaxial NPN silicon planar transistors in TO 39 case (6 C 3 DIN 41873). The collector is electrically connected to the case. The transistors are particularly suitable for AF output stages and as a medium-power switch. Type Ordering code . CEB . BSX 62 a60218-x62 4 5 et BSX62-6 | 060218-X62-B Z @) . BSX 62-10 | 060218-X62-C BSX 62-16 | 060218-x62-D Ws:1-41 So on BSX 63 060218-X63 BSX63-6 | 060218-X63-B ‘Approx. weight 1.5 Dimensions in mm BSX 63-10 | 060218-x63-C Maximum ratings BSX 62 BSX 63 Collector-emitter voltage Voeo | 40, 60 Vv Collector-emitter voltage Vees | 60 80 v Emitter-base voltage Veso | § 6 v Collector current Ic 3 3 A Base current ia 600 500 mA Junction temperature Tj 200 200 °C Storage temperature range Tota -65to+200 | -65t0+200 | °c Total power dissipation (Tease $ 25°C) Piot 5 5 w Thermal resistance Junction to case Rise | $38 $36 Kw Junction to ambient air Ria | $200 $200 Kw Static characteristics (Tcase = 25°C) : Transistors BSX 62 and BSX 63 are grouped according to their DC current gain hre at Ig = 1.Aand Veg = 1 V. The different groups are marked by figures of the DIN-R 5 series. Valid for the following operating points are: Type BSX62_ | BSX62 | BSX62 : Bsxe3 [- _| BSX 62, BSX 63 Vee | Ic | hee hee bee Vee Veesat" Voesat'? vA | belle lolly Toll v v v (40to | (63t0 | (100to 1) The transistor is saturated to such an extent that the DC current gain decreases to hfe = 10. * AQL = 0.65% ee atsnne ee 865

2181 B-06 rhe

25C D MM 8235605 0004820 & MMSIEG | (25C 04820 O-T-35~-/7 BSX 62 — SIEMENS AKTIENGESELLSCHAF —_____BSx63 Static characteristics (Tamp = 25°C) BSX 62 BSX 63 Collector cutoff current (Vces = 40 V) Tees 10 (<100)* | ~ nA Collector cutoff current (Vces = 60 V) Tees - 10 (<100)* | nA Collector cutoff current (VeEs = 40 V; Tease = 150°C) Tees 10(<100) | - HA . Collector cutoff current (Vces = 60 V; Tease = 150°C) Tees - 10(<100) | HA Collector-emitter breakdown voltage (ce = 100 mA; pulse length 200 ps; duty cycle 1%) Viriceo | >40 >60 v Emitter-base breakdown voltage (eg = 10 pA) Viarjeso | >5 >6 v Collector-base breakdown voltage (Icg = 100 yA) Verjcao | >60 >60 v Dynamic characteristics (Teas4 = 25°C) Transition frequency (Ig = 200 mA; Vee = 10 V) fr 70(>30) | 70(>30) | MHz Collector-base capacitance (Vea =10V) Ceo 35(<70) | 36(<70) | pF Switching times: toft <1.6 <1.6 us versus tomperatare ee Test circuit for switching times W Poa (0 f= parmetr LTT TTT f rr wt PeNCeeeeeog i i “WEN TTT seater = HENettH 02 3 N\\ to, est ay < CoceeKECon t N ; EEN Ceaael NT jLELTT CRREN 0 100 200°C *AQL = 0.65% —=T BEB neta,

2182 B-07

25C D MM 8235605 0004821 & MMSIEG | 25c_o4s2t OT-B5-~7 BSX 62 — SIEMENS AKTIENGESELLSCHAF —_____ 85x88 WwW BSX 62, BSX 63 BSX 62-6, BSX 63-6 EEFHEEHIET HEE Hie Heo te SCH Ce Ame | COI TIT eaerrit | | BAU NEL Marl { FATT TULA UICC Bee ice Se a deg a a ‘eet Lo] Ge Eth hs e/a CTI TIN VI Ti oe w wt ot woo we wos 6a $e, 5 108m DC currant gain hee =f lic) . DC current gala href (lc) Veg = 1 V; Tam = parameter Vog = 1 Vs Tam = parameter {common emitter configuration) {common emitter configuration) BSX 62-10, BSX 63-10 BSX 62-16

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25C D MM 8235605 0004822 T. MMSIEG 25C 04822 © D-J-35-/) Bsxe2 BSX 63 SIEMENS AKTIENGESELLSCHARF ———— aiiewee = Te = tex) Sites charecterietice Te = t Mes) ma dommon’ emitter configuration) asx 62 m (common emitter: configuration 63 20 7m coo 4 Coo ” a alee 4 eo wolf wie ee COO : 4 oe a ' = w PEPE io a resensttees a [Co fizm = oo PEEEEECOOEC {ft al Py oma Tr] Sr ePSeEEeE ee] a PCr Ia oer] 9 2) == — FERC oo Re | a it 15} © AA oda | otto 9 EEE eae oT tr rrr oL LOTT Titi 0 n wo w WV on 0m H © SO COV Ne — Ve Output characteristics Jc = f (Vee) Seromeree (common emitter configuration) A BSX 62, BSX 63 4 * Corea ERC a eee eH te /aeec cana h see . ; CUVEE CCCECT oar HIV EERE ae ee eS | AP Ae /Pcemee HIAEECA ee ol Pom] S/o A: Se He ars | Ot oS | SRS COCO ere 0 1 a av 868 . *

2184 B-09

25C D M™@ 6235b05 oo048e3 1 WESIEG to ~28C 04823 OT~35-/7 BSX 62 BSX 63 —— SIEMENS AKTIENGESELLSCHAF ——WH——— Collector-emitter saturation Collector-base saturation voltage Voesat =f (lc) voltage Veesat = f lc) re = 10; Temp = parameter ~ bye = 10; Temp = parameter {common emitter configuration) (common emitter configuration) . im BSX 62, BSX 63 m BSX 62, BSX 63 @ SERRE EE ErEEEEEA 1 EERE EEEEEREEE

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——Veesat —Vaesat ‘Collector cutoff current versus temperature Icgo =f (Tam) mA BSX 62, BSX 63 " ceeeSSee fe = FRR EREREEe Pe SSeEaaeereescee . EERE AER LEE C rec SSSS=,5=5255===] FERRE Pee LAU a Saeas tessa aese= FREER AGEEE REE REE CoCo ere rere wolCCEECEELE EARS iene =| EEE —<som FE ew COLOCCCAerc o 0 oy) 10°C — Tent (2185 B-10 869