BSX48 SIEMENS | Alldatasheet
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25C D MM 8235605 0004815 2 MESIEG | recs . NPN Silicon Planar Transistors BSX 48 BSX 48 and BSX 49 are double diffused epitaxial silicon planar transistors in TO 18 case i (18 A 3 DIN 41876). Their collectors are electrically connected to the case. The transistors are designed for use as high-speed switches and are particularly suitable : for driving magnetic cores. For data on the switching behavior of the transistors refer to the characteristics of the 7 corresponding types BSY 34 and BSY 58. : Type Ordering code — BO BSX 48 060218-x48 ou a 8 BSX 49 060218-x49 [. 3 AA521 eh sal Approx. weight0.3g Dimensions in mm Maximum ratings BSX 48 BSX 49 Collector-emitter voltage Veco | 25 40 7 Collector-emitter voltage Voces. 50 60 Vv Collector-base voltage Veao | 50 60 Vv Emitter-base voltage Veso | & 5 v Collector current Ic 600 600 mA Base current Ig 200 200 mA Junction temperature qj 200 200 °C Storage temperature range Teg -66to+200 | -65to+200 | °C Total power dissipation (ToaseS45°C) Pitot 1 1 w Thermal resistance Junction to ambient air Rinsa | $500 | 500 | Kw Junction to case Rinse | $160 $160 KW Static characteristics (Tam = 25°C) . Ata collector emitter-voltage of Vce = 1V and the following collector currents, the following values apply: Type BSX 48 os BSX 49 Tema Vest" . 1 23 0.62 - 23 0.62 - 10 37 0.70 - 37 0.70 - 1) The transistor is saturated to such an extent that the DC currant gain decreases to hrE = 10. + AQL = 0.65%
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25C D MM 8235605 O00481b 4 MMSIEG. 25¢ 04816 OTIS Bsx 48 BSx 49 — SIEMENS AKTIENGESELLSCHAF_ ———— Static characteristics (Tam = 25°C) BSX48 BSX 49 Collector cutoff current (Veao = 50 V) Teo <120° <70* nA Collector-emitter breakdown voltage . (Fceo = 10 mA) Veryceo | >25 >40 v : Collector-base breakdown voltage (cao = 100 nA) Veericao | >50 >60 Vv Emitter-base breakdown voltage {ego = 100 nA) Vierieso | >5 >6 Vv Dynamic characteristics (Tam = 25°C) Transition frequency (/¢ = 30 mA; Vee = 10 V; f = 100 MHz) f 400 (>250) | 400(>250) | MHz Collector-base capacitance (Vego = 10 V) Ccso 4.5 (<6) 4.5 (<6) pF Emitter-base capacitance (Veso=1V) —Ceso 22 22 pF Switching times: Operating point: Ig = 160 mA; Ig) = 15 mA; ton 365 30 ns =Ig2 = 15 mA; Ry = 150.9 toft 60 50 ns Operating point: Ig = 600 mA; Igy = 50 mA; —Ig2 = 25 MA; Ve = 15 V R, = 80 Q for BSX 49 (Voc = 40 V) ton 35 (<65) 30 (<50) ns Ry = 50 Q for BSX 48 (Vcc = 25 V) tott 65(<110) | 65(<95) ns Test circuit for switching times uF tka . 50 coe , Sanping-Oe. Iesfp <ins na > L y «7a S02 | tue gprs tur Yee * AQL = 0.65% 867 seta
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“25C D MM 8235605 0004817 & MMESIEG” 25C 04817 OF-35-15 BSX 48 BSX 49 Total perm. power dissipation Collector current /c = f (Ic) versus temperature Veg =1V. . Prot = # (1); Rey = parameter (common emitter configuration) . w BSX 48, BSX 49 ma __ BSX 48, BSX 49 =a) ee fy COLE EEC tort) COeCeceec v= BVA oth WAZA KEES EEEEH aie) //ai BEECHER B//Aiminl CEEERRSEENG s/n »>CCCCCCEPSS WMT TTT 0 100 200° ot ew hh OYA —eT ‘Output characteristics fe = f (Vee) Output characteristics f= f(Vce) Ig = parameter Ig = parameter (coramon emitter configuration) {common emitter configuration) mA BSX 48 mA 30 2 BSX 49 600 7 Verb Ee Wives | | IT) a WALL Bet . I of el | {PPC a PVA om Herr eH oer tT | WT | Ler | | 4eeadean Weel 1 ect | Ler a0 th iz tA Weer KEPT m COU of} 4+} (err | | === a HTT ye He pj|j{|}t[s Fee tina | = ia A Hc tttttceei 0 0 ro) wv Q 0 a wv 40V . —+ Ny — le ph me .
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25C D MM 8235605 O0O4818 6 MASIEG* . 25C 04818 O0-7-95-/5 BSX 48 BSX 49 ~ SIEMENS AKTIENGESELLSCHAF Collector-emitter saturation Input characteristics /y =f (Vae) ‘voltage Voesat = f (ic); hee = 10 Veg =1V Base-emitter saturation (common emitter configuration) voltage Vagsat = f (Ichi hre = 10 mA BSX 48, BSX 49 mA BSX 48, BSX 49 10 ere 10 ee SSE EES escacsesasas==== Pil anepss=cc=erosoc| TE feed pide occe77727ccs f wg een | oA fea) aeeepeePt re BREE REE EH wo LLL eevee ERR Se hone ERS Are i= LS ss § Same ati a ECHR . Sine cee
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