BSX45 NJSEMI | Alldatasheet

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20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX; (973) 376-8960 NPN medium power transistors BSX45; BSX46; BSX47

FEATURES

  • High current (max. 1 A)
  • Low voltage (max. 80 V).

APPLICATIONS

  • General industrial applications.

DESCRIPTION

NPN medium power transistor in a TO-39 metal package. PINNING PIN collector, connected to case Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Plot hFE fi PARAMETER collector-base voltage BSX45 BSX46 BSX47 collector-emitter voltage BSX45 BSX46 BSX47 peak collector current total power dissipation DC current gain BSX45-10; BSX46-10; BSX47-10 BSX45-16; BSX46-16; BSX47-16 transition frequency CONDITIONS open emitter open base Tcase < 25 °C lc = 1 00 mA; VCE = 1 V lc = 50 mA; VCE = 10 V; f = 100 MHz MIN. 100 TYP. 100 160 MAX. 100 120 1.5 6.25 160 250 UNIT V V V V V V A W MHz NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

NPN medium power transistors BSX45; BSX46; BSX47 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO Ic ICM IBM Plot Tstg Tj Tamb PARAMETER collector-base voltage BSX45 BSX46 BSX47 collector-emitter voltage BSX45 BSX46 BSX47 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tcase < 25 °C MIN. -65 -65 MAX. 100 120 1.5 200 6.25 +150 200 +150 UNIT V V V V V V V A A mA W THERMAL CHARACTERISTICS SYMBOL Rth j-a R-th j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 200 UNIT K/W K/W

NPN medium power transistors BSX45; BSX46; BSX47 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICBQ IEBO hpE hpE hpE hpE VcEsat VcEsat VBE Cc ce fr F PARAMETER collector cut-off current BSX45; BSX46 collector cut-off current BSX47 emitter cut-off current DC current gain BSX45-10; BSX46-10; BSX47-10 BSX45-16; BSX46-16 DC current gain BSX45-10; BSX46-10; BSX47-10 BSX45-16; BSX46-16; BSX47-16 DC current gain BSX45-10; BSX46-10; BSX47-10 BSX45-16;BSX46-16 DC current gain BSX45-10; BSX46-10; BSX47-10 BSX45-16;BSX46-16 collector-emitter saturation voltage BSX45; BSX46 collector-emitter saturation voltage BSX47 base-emitter voltage collector capacitance BSX45 BSX46 BSX47 emitter capacitance transition frequency noise figure CONDITIONS IE = 0; VCB = 60 V lE = 0;VCB = 60V;Tamb=150°C IE = 0; VCB = 80 V lE = 0;VCB = 80V;Tamb=150° lc = 0; VEB = 5 V lc = 100uA;VCE = 1 V lc = 100mA; VCE = 1V lc = 500 mA; VCE = 1 V lc = 1 A; VCE = 1 V lc= 1 A; IB= 100mA lc = 500 mA; IB = 25 mA lc= 100mA; VCE = 1 V lc = 500 mA; VCE = 1 V lc = 1 A; VCE = 1 V lE = ie = 0;VCB = 10V;f=1 MHz lc = ic = 0;VEB = 0.5V;f=1 MHz lc = 50 mA; VCE = 10 V; f = 100 MHz lc = 100 nA; VCE = 5 V; Rs = 1 kii; f = 1 kHz; B = 200 Hz MIN. 100 0.75 TYP. 100 160 3.5 MAX. 160 250 900 1.5 UNIT nA MA nA MA nA V mV V V V PF PF pF PF MHz dB Switching times (between 10% and 90% levels) ton toff turn-on time turn-off time lcon = 100 mA; lBon = 5 mA; Isoff = -5 mA 200 850 ns ns

NPN medium power transistors BSX45; BSX46; BSX47 PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads SOT5/11 DIMENSIONS (mm are the original dimensions) scale UNIT nnm A 6.60 6.35 a 5.08 b 0.48 0.41 D 9.39 9.08 Di 8.33 8.18 j 0.85 0.75 k 0.95 0.75 L 14.2 12.7 w 0.2 a 45° - seating plane 10 mm I H b OUTLINE VERSION SOT5/1 1 REFERENCES IEC JEDEC TO-39 EIAJ EUROPEAN PROJECTION e30 ISSUE DATE