BSX20 NJSEMI | Alldatasheet
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Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN switching transistor BSX20
FEATURES
- Low current (max. 200 mA)
- Low voltage (max. 15 V).
APPLICATIONS
- High-speed saturated switching (and HF amplifier applications).
DESCRIPTION
NPN switching transistor in a TO-18 metal package. PINNING PIN collector, connected to case Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO Ic Plot HFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time CONDITIONS open emitter open base Tamb ^ 25 C lc=10mA; VCE=1 V lc= 100mA; VCE = 2 V lc= 10mA; VCE = 10V; f= 100MHz lCon= 1° mA: 'Bon = 3 mA; lBoff = -1.5 mA MIN. 500 MAX. 200 360 120 UNIT V V mA mW MHz ns NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO Ic ICM IBM Plot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector t < 1 0 us MIN. -65 -65 MAX. 4.5 200 300 100 360 + 150 200 + 150 UNIT V V V mA mA mA mW C C THERMAL CHARACTERISTICS SYMBOL Rth j-a Rfhj-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 480 150 UNIT K/W K/W CHARACTERISTICS TJ = 25 "C unless otherwise specified. SYMBOL !CBO IEBO hpE VcEsat VsEsat Cc Ce fr PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency CONDITIONS IE = 0; VCB = 20 V |E = 0;VCB = 20V;Tj = 150 C lc = 0; VEB = 4 V lc= 10mA; VCE= 1 V lc = 10 mA; VCE = 1 V; Tj = -55 "C lc= 100mA; VCE = 2V lc= 10 mA; IB = 0.3 mA lc= 10 mA; IB= 1 mA lc= 100mA; lB=10mA lc= 10 mA; IB = 1 mA lc= 100mA; lB=10mA !E = ie = 0; VCB = 5V;f=1 MHz |c = ic = 0; VEB = 1 V;f=1 MHz lc=10mA;VcE=10V;f=100MHz MIN. 700 500 TYP. 600 MAX. 400 100 120 300 250 600 850 1.5 4.5 UNIT nA uA nA mV mV mV mV V PF PF MHz
Switching times (between 10% and 90% levels) ton td tr toff ts tf ton td tr toff ts tf turn-on time delay time rise time turn-off time storage time fall time turn-on time delay time rise time turn-off time storage time fall time Icon = 10 mA; lBon = 3 mA; taoff = -1 -5 mA; see Fig. 2, test conditions A Icon = 1 00 mA; lBon = 40 mA; lB0ff = -20 mA; see Fig.2, test conditions B MIN. TYP. MAX. UNIT ns ns ns ns ns ns ns ns ns ns ns ns seating plane 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)