BSW66A NJSEMI | Alldatasheet

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Technical content

<Bs.m.i-(,ona\\j.ctoi Lpioduct±, Una, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BSW66A; BSW67A; BSW68A NPN switching transistors

FEATURES

  • High current (max. 1 A)
  • High voltage (max. 150 V).

APPLICATIONS

  • General purpose switching and amplification
  • Industrial applications.

DESCRIPTION

NPN transistor in a TO-39 metal package. PINNING PIN collector, connected to case Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO Ic Ptot HFE h toff PARAMETER collector-base voltage BSW66A BSW67A BSW68A collector-emitter voltage BSW66A BSW67A BSW68A collector current (DC) total power dissipation DC current gain transition frequency turn-off time CONDITIONS open emitter open base Tcase < 25 °C lc = 10mA;VCE = 5V lc = 500 mA; VCE = 5 V lc = 100 mA; VCE = 20 V; f = 100 MHz Icon = 500 mA; lBon = 50 mA; lBoff = -50 mA MIN. TYP. 130 900 MAX. 100 120 150 100 120 150 5 1 UNIT V V V V V V A W MHz ns NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO Ic ICM IBM Plot Tstg Tj ' amb PARAMETER collector-base voltage BSW66A BSW67A BSW68A collector-emitter voltage BSW66A BSW67A BSW68A emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector tp < 20 ms Tamb < 25 °C Tcase •£ 25 °C MIN. -65 -65 MAX. 100 120 150 100 120 150 200 800 +150 200 +150 UNIT V V V V V V V A A mA mW W THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS free air VALUE 220 UNIT K/W K/W

TJ = 25 °C unless otherwise specified. SYMBOL ICBO ICBO ICBO IEBO HFE VcEsat VBESSI Cc Ce fl PARAMETER collector cut-off current BSW66A collector cut-off current BSW67A collector cut-off current BSW68A emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency CONDITIONS IE = 0; VCB = 50 V lE = 0;VCB = 50V;Tj = 150°C IE = 0; VCB = 100V IE = 0; VCB = 60 V lE = 0;VcB = 60V;Tj = 150°C IE = 0; VCB = 120V IE = 0; VCB = 75 V lE = 0;VCB = 75V;Tj = 150°C IE = 0; VCB = 150V lc = 0; VEB = 3 V Ic = 0; VEB = 6 V VCE = 5 V lc=10mA lc = 100mA lc = 500 mA lc = 1 A lc = 100 mA; IB = 10 mA lc = 500 mA; IB = 50 mA lc = 1 A; IB = 150mA lc = 100mA; IB = 10mA lc = 500 mA; IB = 50 mA lc=1 A; IB = 150mA lE = ie = 0;VCB=10V;f=1 MHz lc = ic = 0;VEB = 0;f=1 MHz lc = 100 mA; VCE = 20 V; f = 100 MHz MIN. TYP. 130 MAX. 100 100 100 100 100 100 100 100 150 400 900 1.1 1.4 300 UNIT nA HA HA nA HA HA nA HA HA nA HA mV mV V mV V V pF pF MHz Switching times (between 10% and 90% levels) ton toff turn-on time turn-off time Icon - 500 mA; lBon = 50 mA; Ifioff = -50 mA 500 900 ns ns

A -B- t o c DIM A B C D E F G H J K L MIN 8.50 7.74 6.09 0.40 2.41 4.82 0.71 0.73 12.70

42 DEC

9.39 8.50 6.60 0.53 0.88 2,66 5.33 0.86 1.02 48DEG PIN CONFIGURATION 1. EMITTER 2. BASE 3. COLLECTOR Packing Detail PACKAGE TO-39 STANDARD PACK Details 500 pcs/polybaj Net Weight/Qty INNER CARTON BOX || OUTER CARTON BOX S2S 540 gm/500 pcs || 3" x 7.5" x 7.5" Qty _|| Size Qty 32K GrWt 40kgs