BSW67A SEME-LAB | Alldatasheet
Document overview
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Technical content
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. SILICON NPN PLANAR TRANSISTOR VCBO Collector – Base Voltage (open emitter) VCEO Collector – Emitter Voltage (open base) IC Collector Current (d.c.) ICM Collector Current (peak value) PTOT Total Device Dissipation @ Tamb ≤ 45°C PTOT Total Device Dissipation @ TC ≤ 25°C PTOT Total Device Dissipation @ TC ≤ 100°C Tstg Storage Temperature Tj Junction Temperature RθJC Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient 120V 120V 1.0A 0.7W 2.85W –65 to 200°C 200°C 35°C / W 220°C / W MECHANICAL DATA Dimensions in mm (inches) Underside View TO39 PACKAGE (TO-205AD) ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector 0.89 (0.035)max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45° 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 0.74 (0.029) 1.14 (0.045)
DESCRIPTION
General Purpose NPN Transistor in a Hermetic TO39 Package
FEATURES
- VCBO = 120V VCEO = 120V IC = 1.0A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Parameter Test Conditions Min. Typ. Max. Unit Parameter Test Conditions Min. Typ. Max. Unit ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) IC = 10mA I B = 0 IC = 100μAI E = 0 IE = 100μAI C = 0 VCB = 60V I E = 0 VCB = 60V I E = 0 Tamb = 150°C IC = 0.1A I B = 0.01A IC = 0.5A I B = 0.05A IC = 1.0A I B = 0.15A IC = 0.1A I B = 0.01A IC = 0.5A I B = 0.05A IC = 1.0A I B = 0.15A IC = 0.1A V CE = 5V IC = 0.5A V CE = 5V IC = 1.0A V CE = 5V V(BR)CEO* Collector – Emitter Breakdown Voltage V(BR)CBO* Collector – Base Breakdown Voltage V(BR)EBO* Emitter – Base Breakdown Voltage ICBO Collector Cut-off Current VCE(sat)* Collector – Emitter Saturation Voltage VBE(sat)* Base – Emitter Saturation Voltage hFE* DC Current Gain 120 120 0.1 0.15 0.5 1.0 0.9 1.1 1.2 V V V μA V V f T Transition Frequency Cobo Output Capacitance Cibo Input Capacitance ton Turn–On Time toff Turn–Off Time IC = 100mA V CE = 20V f = 35MHz VCB = 10V I E = 0 f = 1.0MHz VEB = 0 I E = 0 f = 1.0MHz IC = 0.5A V CC = 20V IB1 =- IB2 = 0.05A 300 0.3 1.0 MHz pF pF μs t* Pulse test tp = 300μs , δ ≤ 1.5% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)