BSV65 SIEMENS | Alldatasheet
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25C D MM 6235605 0004802 4 MMSIEG ,, 7-35-47 NPN Transistor for Switching Applications BSV 65 i SIEMENS AKTIENGESELLSCHAF - ° - BSV 665 is an epitaxial NPN silicon planar switching transistor in TO 236 plastic package - (23.3 DIN 41 869) designed for use in thick and thin film circuits. Itis particularly suitable for logic applications at the high packing density of microelectronic circuits and for hybrid units, The type BSV 65 is marked with the code letter “F”. The adjacent code letters A and B identify the DC current gain group. The transistor is also available upon request with changed : terminal sequence (emitter and base terminal interchanged) under the designation BSV 65 R (mark “FY” and “FZ"). 420051 005, Type Mark Ordering code aa niee Of 20015 E | Bl BSV 652) Q62702-S355 S BSV65A | FA Q62702-S347 . ay BSV65B | FB Q62702-S348 [a s BSV 65 R2) 62702-8428 ES BSV 65 RA| FY 62702-8407 Ofsoms ao t-O5_ BSV 65 RB| FZ Q62702-S406 Boys 12-035 ‘Approx. weight 0.02g Dimansions in mm Maximum ratings (Tamp = 25°C) Collector-emitter voltage Veo 15 Vv Collector-base voltage Vcso 20 Vv Emitter-base voltage Veso 5 v Collector current Ie 150 mA Base current 4 30 mA Junction temperature Tj 150 °c Storage temperature range Tstg -55to+125 | °c Total power dissipation (Tamb = 45 °C) on glass substrate (7 x 7 x1 mm) Prot 1501) >| mw Thermal resistance Junction to ambient air if mounted on Glass substrate (7 x 7 x 1mm) Rens = 700 K/W Ceramic substrate (30 x 12 x1 mm) Rina $450 kw Glass-fiber substrate (30 x 12 x 1.5) Rihaa $450 Kw i i Timex ~ Te 1) The pais toa power dspation Par gae "amg determined by the actual thermal resistance which 2) In case of orders without en exact indication of the current amplification wanted, a transistor will be delivered of thet current amplification group available at stock. 848
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25¢ D mm 8235605 0004803 & MISIEG ————~" SIEMENS AKTIENGESELLSCHAF Static characteristics (Tam» = 25°C) DC current gain : (Vce = 0.35 V; Ic = 10 mA) group A (FA) hee 40 to 300 - (Veg = 0.35 V; Ic = 10 mA) group B (FB) hee 75 to 300 - Collector-emitter saturation voltage (Ig = 10 mA; Ig = 1 mA) Veesat <0.3 v Base-emitter-saturation voltage : Uc = 10 mA; Ig = 1 mA) Vaesat <0.9 v Collector cutoff current (Veao = 15 V) Teao <500 nA (Voao = 15 V, Tamb = 125°C) Toso <30 HA Collector-emitter breakdown voltage - (ceo = 10 mA) Veerceo | >15 v Collector-base breakdown voltage (Icgo = 114A) Viarjcao | >20 v Emitter-base breakdown voltage (/ego = 10 HA) Viarjeso | >5 Vv Dynamic characteristics (Temp = 25°C) Transition frequency (Voge = 10 V; Ic = 10 mA; f = 100 MHz) fr >280 MHz Collector-base capacitance (Voso = 5 V) Ccso <5 pF Switching times (/¢ = 10 mA; Ig; = 3 mA; ton <20 ns —Ig2 = 1.5 mA; Ry = 270 Q) tott <40 ns Storage time (Ic = Je; = 10 mA; Rec = 1 kQ) t <20 ns Test circuit for turn-on and turn-off time measurements: Duty cycle <2% >300n8 209 1 Te = _ Sanpling-Ose, Ry=502 IN 502 fretns 502A |33k Yee 1509 YE | Vegas? uF Vogsi0 ot uF 849
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25C D M@™ 8235605 0004804 & MESIEG © 25C 04804 OF- 35/7 BSV 65 — SIEMENS AKTIENGESELLSCHAF HW ____ Test circuit for storage time measurement ts. Duty cycle <2% : egg = UF 1k. a Fr. versov OF wg oi: = RyS02 \\ “ reins [sso | |so00 Vee 2 Voge UF Vogetov tt tur Total perm. power dissipation DC current gain re = f (lc) Hf i. Con om ‘| = Glass subswate 7x/al i H=2= teens 3428 am HT eee TTT [C[3 = Gls xr 28 mm re UTIL rN TT TTT we A fe @ COCO pail ‘ i it AREA PAA Th ae MTT a {) GEECARAC eco CaS CT HEE AER CO TTI NW TTT we CEECCEENCEREEE Cane TH @ ECE RN hes HI AMT soe {TNE TTI COCOA ATI ert 8 63 EECCCCCCN Ne MAN ECCECCECee Ne a A a i ACN TIA TET eR CCKee EEE PANT Pall Hi COCCCC ec COTTE TITY CTT SERSERRRRRRE) Ne COT CT TNT HEE COC ETH Ce EEEECCE ECON UT TT »CCCCCCCeeeoiey LOT COT CT TTT oo 0 0 wo wt nn 07 toma —rhep —+h 850 : .
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25C D MM 8235b05 OOO4A0S T MMSIEG | 25¢ 04805 _ O-T-39~// BSV 65 — SIEMENS AKTIENGESELLSCHAF SSCS Output characteristics fe = f (Vee) Qutputcherectristes c= "WVee) a Cntr contusion ay omen eitetoton 180 ear ee Yar a : + eer + PEER Yo f sie : a 2e2oceee CoSeecenee [Ye | | eee :2sneneene bee tat rrr yy | Se eH aoe CACC Moe alt A as ea ta ZL ACCrr rs Pe | epocen Peco tae | Se oaLLT TTT Tt ey Fy a 0 w wv 0 i) 20V Me — Noe Collector-emitter saturation voltage Base-emitter saturation voltage Veesat = f Uc), Vatsat = f (lc), mA fre = 10; Temp = parameter mig PFE 10; Tan = parameter .========——| s PEPER EE EEREEEEE rr 4 Eee @ LCE Eee | t wl LOT || ee, / HAA ot A LEELA LTT == si BSSaearc=sa==== CS eS os Se ee oe 5 GREER SIE Foe FEE ee et tL vsfed fre LLL SSS SSS sEEPRRAEREER PEARSE EEC wo LOVETT TT wt LOA o Ot 02 «03 Ok OV 0 05 10 1SV st = = 851
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25C D M@ 823505 OOO4SOL b MMSIEG 25c 04806 O7TW35-I( BSV 65 SIEMENS AKTIENGESELLSCHAF)OOSOC~SOSOSOSSSSS Collector-base capacitance Collector cutoff current versus ‘Cop =f (Veeo) temperature (cao = f (Tame); ' mA Veao = 26.V seo ee Tag A 8 a LET TT yy | Pe ee ce ee Coal oc Bea ll gooeeneZene wo CT ll | === ee sai ati | . “Hee SSeees A FRASER LA TTT TT => = ae BAR ete ATT TT rr ee 7 0 100 200°6 ——> Veao lan Collector curont f= Vee Me niovir = T00Mte: Tag 26° in4 (Common emitter configuration) baz 10 ee SS 6 » EEEEECEERE «| LOT f LLL ZZ a = SSSeSe eee LENT EEE Creo a) el oT Teoh st LUA TTT W=saaeseatees AT TT BEER Pa | FEET IRR 2 j lil LE TT | 2 | » EERE RR RPS ZALATIE ET FREE RAE ee eee » LEA ol LETT TTT 0 oO 8 2 10° 5 0 5 10'mA — —h 852