BSV64 NJSEMI | Alldatasheet
Document overview
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Technical content
, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BSV64 TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MECHANICAL DATA Dimensions in mm (inches) . \\- 9 40 (0 37) j 7.75(0.305) * 8.51 (0,335) J L ' T 089 max (0035) 7 75 (0.305) > 8 51 (0,335) dia. A TO39 PACKAGE Underside View Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector SILICON NPN PLANAR TRANSISTOR
FEATURES
- VCBO = 100V
- VCEO = 60V
- IC = 2A
DESCRIPTION
General Purpose NPN Transistor in a Hermetic TO39 Package ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCER VCEO VEBO lc 'CM IB PTOT Tstg, TJ Rthj-c Collector - Base Voltage (open emitter) Collector - Emitter Voltage (RBE < 50Q) Collector - Emitter Voltage (open base) Emitter- Base Voltage (open collector) Collector Current (d.c.) Collector Current (peak value) Base Current (d.c.) Total Device Dissipation @ Tc = 50°C Storage Temperature Junction Temperature Thermal Resistance Junction to Case 100V 80V 60V -55to175°C 175°C/W 25°C / W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VcEsat VBEsat 'CBO 'EBO "RE CG fj ton toff Collector - Base Saturation Voltage Emitter - Base Saturation Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector Capacitance at f = 1 MHz Transistion Frequency at f = 35MHz Turn on Time Turn off time Test Conditions lc = 5A IB = 5A IC = 5A "|B = 5A VCB = 60V IE = 0 VEB = 4V lc = 0 VCE = - 5V lc = 2A lE = le=0 VCB=10V IC = 0.5A VCE=5V lCon-5A;lBon = -lBoff=0.5A -VBEoff=2V Min. Typ. Max. 1.8 100 0.6 1.2 Unit V uA PF MHz US