BST52 ZETEX | Alldatasheet
Document overview
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Technical content
ISSUE 3 – JANUARY 1996
FEATURES
- Fast Switching * High h FE PARTMAKING DETAIL — AS3 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 90 V Collector-Emitter Voltage V CEO 80 V Emitter-Base Voltage V EBO 10 V Pea Pulse Current I CM 1.5 A Continuous Collector Current I C 500 mA Base Current I B 100 mA Power Dissipation at Tamb=25°C P tot 1W Operating and Storage Temperature Range T j:Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 90 V IC=10µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 80 V I C=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 10 V IE=10µA, IC=0 Emitter Cut-Off Current I EBO 10 µA VEB=8V, IE=0 Collector-Emitter Cut-Off Current ICES 10 µA VCE=80V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 1.3 1.3 V V IC=500mA, IB=0.5mA IC=500mA, IB=0.5mA Tj=150°C Base-Emitter Saturation Voltage VBE(sat) 1.9 V I C=500mA, IB=0.5mA Static Forward Current Transfer Ratio hFE 1K IC=150mA, VCE=10V* IC=-500mA, VCE=-10V* Turn On Time t on 400 Typical ns I C=500mA IBon=IBoff=0.5mATurn Off Time t off 1.5K Typical ns * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device For typical characteristics graphs see FMMT614 datasheet. BST52 C C B E SOT89 3 - 80