BSS98 INFINEON | Alldatasheet
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Data Sheet 1 05.99 SIPMOS ® Small-Signal Transistor
- N channel
- Enhancement mode
- Logic Level Pin 1 Pin 2 Pin 3 S G D Type VDS ID R DS(on) Package Marking BSS 98 50 V 0.3 A 3.5 Ω TO-92 SS98 Type Ordering Code Tape and Reel Information BSS 98 Q62702-S053 E6288 BSS 98 Q62702-S517 E6296 BSS 98 Q62702-S635 E6325 Maximum Ratings Parameter Symbol Values Unit Drain source voltage V DS 50 V Drain-gate voltage R GS = 20 kΩ V DGR Gate source voltage V GS ± 20 ESD Sensitivity as per MIL-STD 883 Class 1 Continuous drain current TA = 25 ˚C ID 0.3 A DC drain current, pulsed TA = 25 ˚C IDpuls 1.2 Power dissipation TA = 25 ˚C P tot 0.63 W BSS 98
Data Sheet 2 05.99 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150˚C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) R thJA ≤ 200 K/W DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS 50 - - V Gate threshold voltage VGS =V DS, ID = 1 mA V GS(th) 0.8 1.2 1.6 Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = 25 ˚C VDS = 50 V, VGS = 0 V, Tj = 125 ˚C VDS = 30 V, VGS = 0 V, Tj = 25 ˚C IDSS 0.05 100 0.5 µA nA Gate-source leakage current VGS = 20 V, V DS = 0 V IGSS - 10 100 nA Drain-Source on-state resistance VGS = 10 V, ID = 0.3 A VGS = 4.5 V, ID = 0.3 A R DS(on) 2.8 1.8 3.5 Ω
Data Sheet 3 05.99 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance V DS ≥ 2 * ID * RDS(on)max, ID = 0.3 A gfs 0.12 0.23 - S Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz C iss - 40 55 pF Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz C oss - 15 25 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz C rss - 5 8 Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 0.29 A R G = 50 Ω td(on) - 5 8 ns Rise time V DD = 30 V, VGS = 10 V, ID = 0.29 A R G = 50 Ω tr - 6 9 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 0.29 A R G = 50 Ω td(off) - 12 16 Fall time V DD = 30 V, VGS = 10 V, ID = 0.29 A R G = 50 Ω tf - 15 20
Data Sheet 4 05.99 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TA = 25 ˚C IS - - 0.3 A Inverse diode direct current,pulsed TA = 25 ˚C ISM - - 1.2 Inverse diode forward voltage V GS = 0 V, IF = 0.6 A V SD - 1 1.4 V
Data Sheet 5 05.99 Power dissipation Ptot = ƒ(TA) 0 20 40 60 80 100 120 ˚C 160 TA 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 W 0.70 Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 ˚C 160 TA 0.00 0.04 0.08 0.12 0.16 0.20 0.24 A 0.32 ID Safe operating area ID=f(VDS ) parameter : D = 0.01, TC=25˚C Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 ˚C 160 Tj V V (BR)DSS
Data Sheet 6 05.99 Typ. output characteristics ID = ƒ(VDS ) parameter: tp = 80 µs , Tj = 25 ˚C VDS 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 A 0.70 ID VGS [V] a a 2.0 b b 2.5 c c 3.0 d d 3.5 e e 4.0 f f 4.5 g g 5.0 h h 6.0 i i 7.0 j j 8.0 k k 9.0 l P tot = 1W l 10.0 Typ. drain-source on-resistance R DS (on) = ƒ(ID ) parameter: tp = 80 µs, Tj = 25 ˚C ID Ω R DS (on) VGS [V] = a a 2.0 b b 2.5 c c 3.0 d d 3.5 e e 4.0 f f 4.5 g g 5.0 h h 6.0 i i 7.0 j j 8.0 k k 9.0 l l 10.0 Typ. transfer characteristics ID = f(VGS ) parameter: tp = 80 µs VDS ≥ 2 x ID x R DS(on)max 0 1 2 3 4 5 6 7 8 V 10 VGS 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 A 0.65 ID Typ. forward transconductance gfs = f (ID ) parameter: tp = 80 µs, V DS ≥2 x ID x R DS(on)max ID 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.24 0.26 S 0.30 gfs
Data Sheet 7 05.99 Drain-source on-resistance R DS (on) = ƒ(Tj) parameter: ID = 0.3 A, VGS = 10 V -60 -20 20 60 100 ˚C 160 Tj Ω R DS (on) typ 98% Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS , ID = 1 mA 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 V 2.6 V GS(th) -60 -20 20 60 100 ˚C 160 Tj typ 98% Typ. capacitances C = f (VDS ) parameter:V GS =0V, f = 1 MHz 0 5 10 15 20 25 30 V 40 VDS 0 10 1 10 2 10 3 10 pF C C rss C oss C iss Forward characteristics of reverse diode IF = ƒ(VSD ) parameter: Tj, tp = 80 µs -2 10 -1 10 0 10 1 10 A IF VSD Tj = 25 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C typ Tj = 150 ˚C (98%)