BSS84P

BSS84P INFINEON | Alldatasheet

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SIPMOS Small-Signal-Transistor Product Summary VDS -60 V RDS(on) 8 /c87 ID -0.17 A Feature /c183 P-Channel /c183 Enhancement mode /c183 Logic Level /c183 Avalanche rated /c183 dv/dt rated SOT-23 VPS05161 Gate pin1 Drain pin 3 Source pin 2 Marking YBs Type Package Ordering Code BSS 84 P SOT-23 Q67041-S1417 Maximum Ratings, at TA = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID -0.17 -0.14 A Pulsed drain current TA=25°C ID puls -0.68 Avalanche energy, single pulse ID=-0.17 A , VDD=-25V, RGS=25/c87 EAS 2.6 mJ Avalanche energy, periodic limited by Tjmax EAR 0.036 Reverse diode dv/dt IS=-0.17A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C dv/dt -6 kV/µs Gate source voltage VGS ±20 V Power dissipation TA=25°C Ptot 0.36 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56

Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point (Pin 3) RthJS - - 200 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA 350 300 Electrical Characteristics, at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=-250µA V(BR)DSS -60 - - V Gate threshold voltage, VGS = VDS ID=-20µA VGS(th) -1 -1.5 -2 Zero gate voltage drain current VDS=-60V, VGS=0, TA=25°C VDS=-60V, VGS=0, TA=125°C IDSS -0.1 -10 -100 µA Gate-source leakage current VGS=-20V, VDS=0 IGSS - -10 -100 nA Drain-source on-state resistance VGS=-4.5V, ID=-0.14A RDS(on) - 8 12 /c87 Drain-source on-state resistance VGS=-10V, ID=-0.17A RDS(on) - 5.8 8 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Electrical Characteristics, at TA = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS/c163 2*ID*RDS(on)max , ID=-0.14A 0.065 0.13 - S Input capacitance Ciss VGS=0, VDS=-25V, f=1MHz - 15 19 pF Output capacitance Coss - 6 8 Reverse transfer capacitance Crss - 2 3 Turn-on delay time td(on) VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25/c87 - 6.7 10 ns Rise time tr - 16.2 24.3 Turn-off delay time td(off) - 8.6 12.9 Fall time tf - 20.5 30.8 Gate Charge Characteristics Gate to source charge Qgs VDD=-48V, ID=-0.17A - 0.25 0.37 nC Gate to drain charge Qgd - 0.3 0.45 Gate charge total Qg VDD=-48V, ID=-0.17A, VGS=0 to -10V - 1 1.5 Gate plateau voltage V(plateau) VDD=-48V, ID=-0.17A - -3.42 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - -0.17 A Inv. diode direct current, pulsed ISM - - -0.68 Inverse diode forward voltage VSD VGS=0, IF=-0.17A - -0.93 -1.24 V Reverse recovery time trr VR=-30V, IF=lS, diF/dt=100A/µs - 23 34 ns Reverse recovery charge Qrr - 10 15 nC

1 Power dissipation

Ptot = f (TA) 0 20 40 60 80 100 120 °C 160 TA 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 W 0.38 BSS 84 P Ptot

2 Drain current

ID = f (TA) parameter: VGS/c179 10 V 0 20 40 60 80 100 120 °C 160 TA -0.02 -0.04 -0.06 -0.08 -0.1 -0.12 -0.14 A -0.18 BSS 84 P ID

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TA = 25 °C -10 -1 -10 0 -10 1 -10 2 V VDS -3 -10 -2 -10 -1 -10 0 -10 1 -10 A BSS 84 P ID R DS(on) = V DS / I D DC 10 ms 1 ms tp = 170.0µs

4 Transient thermal impedance

ZthJA = f (tp) parameter : D = tp/T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s tp -1 10 0 10 1 10 2 10 3 10 K/W BSS 84 P ZthJA single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 °C VDS -0.04 -0.08 -0.12 -0.16 -0.2 -0.24 -0.28 -0.32 A -0.4 BSS 84 P ID VGS [V] a a -2.5 b b -3.0 c c -3.5 d d -4.0e e -4.5 f f -5.0 g g -5.5 h h -6.0 i i -6.5 j j -7.0 k k -8.0 l Ptot = 0.36W l -10.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS; Tj = 25 °C ID /c87 BSS 84 P RDS(on) VGS [V] = a a -2.5 b b -3.0 c c -3.5 d d -4.0 e e -4.5 f f -5.0 g g -5.5 h h -6.0 i i -6.5 j j -7.0 k k -8.0 l l -10.0 7 Typ. transfer characteristics ID= f ( VGS ); |VDS|/c179 2 x |ID| x RDS(on)max parameter: Tj = 25 °C 0 1 2 3 4 V 6 - VGS 0.05 0.1 0.15 0.2 0.25 0.3 A 0.4 - ID 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 °C -ID 0.02 0.04 0.06 0.08 0.1 0.12 S 0.16 gfs

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = -0.17 A, VGS = -10 V -60 -20 20 60 100 °C 180 TA /c87 BSS 84 P RDS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -60 -20 20 60 100 °C 160 TA 0.4 0.6 0.8 1.2 1.4 1.6 1.8 V 2.4 - VGS(th) typ. 98% 11 Typ. capacitances C = f (VDS) parameter: VGS=0, f=1 MHz 0 5 10 V 20 - VDS 0 10 1 10 2 10 pF C Crss Coss Ciss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD -3 -10 -2 -10 -1 -10 0 -10 A BSS 84 P IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

13 Typ. avalanche energy EAS = f (TA), parameter: ID = -0.17 A , VDD = -25 V, RGS = 25 /c87 25 45 65 85 105 125 °C 165 TA 0.5 1.5 mJ EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = -0.17 A pulsed; Tj = 25 °C QGate -10 -12 V -16 BSS 84 P VGS 0,8 VDS max DS maxV0,2

15 Drain-source breakdown voltage

V(BR)DSS = f (TA) -60 -20 20 60 100 °C 180 TA -54 -56 -58 -60 -62 -64 -66 -68 V -72 BSS 84 P V(BR)DSS

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