BSS84 SIEMENS | Alldatasheet

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Semiconductor Group 1 18/02/1997 BSS 84 SIPMOS ® Small-Signal Transistor

  • P channel
  • Enhancement mode
  • Logic Level Pin 1 Pin 2 Pin 3 G S D Type VDS ID R DS(on) Package Marking BSS 84 -50 V -0.13 A 10 Ω SOT-23 SPs Type Ordering Code Tape and Reel Information BSS 84 Q62702-S568 E6327 BSS 84 Q67000-S243 E6433 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS -50 V Drain-gate voltage R GS = 20 kΩ VDGR -50 Gate source voltage VGS ± 20 Continuous drain current TA = 30 °C ID -0.13 A DC drain current, pulsed TA = 25 °C IDpuls -0.52 Power dissipation TA = 25 °C Ptot 0.36 W

Semiconductor Group 2 18/02/1997 BSS 84 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150°C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) R thJA ≤ 350 K/W Therminal resistance, chip-substrate- reverse side 1)R thJSR ≤ 285 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -0.25 mA, Tj = 25 °C V(BR)DSS -50 - - V Gate threshold voltage VGS =VDS, ID = -1 mA VGS(th) -0.8 -1.5 -2 Zero gate voltage drain current VDS = -50 V, VGS = 0 V, Tj = 25 °C VDS = -50 V, VGS = 0 V, Tj = 125 °C VDS = -25 V, VGS = 0 V, Tj = 25 °C IDSS -0.1 -0.1 -60 µA Gate-source leakage current VGS = -20 V, VDS = 0 V IGSS - -1 -10 nA Drain-Source on-state resistance VGS = -10 V, ID = -0.13 A R DS(on) - 5 10 Ω

Semiconductor Group 3 18/02/1997 BSS 84 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≥ 2 * ID * RDS(on)max, ID = -0.13 A gfs 0.05 0.085 - S Input capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz C iss - 30 40 pF Output capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz C oss - 17 25 Reverse transfer capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz C rss - 8 1 2 Turn-on delay time VDD = -30 V, VGS = -10 V, ID = -0.27 A R GS = 50 Ω td(on) - 7 1 0 ns Rise time VDD = -30 V, VGS = -10 V, ID = -0.27 A R GS = 50 Ω tr - 12 18 Turn-off delay time VDD = -30 V, VGS = -10 V, ID = -0.27 A R GS = 50 Ω td(off) - 10 13 Fall time VDD = -30 V, VGS = -10 V, ID = -0.27 A R GS = 50 Ω tf - 20 27

Semiconductor Group 4 18/02/1997 BSS 84 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TA = 25 °C IS - - -0.13 A Inverse diode direct current,pulsed TA = 25 °C ISM - - -0.52 Inverse diode forward voltage VGS = 0 V, IF = -0.26 A, Tj = 25 °C VSD - -0.9 -1.2 V

Semiconductor Group 5 18/02/1997 BSS 84 Power dissipation Ptot = ƒ(TA) 0 20 40 60 80 100 120 °C 160 TA 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 W 0.40 Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ -10 V 0 20 40 60 80 100 120 °C 160 TA 0.00 -0.01 -0.02 -0.03 -0.04 -0.05 -0.06 -0.07 -0.08 -0.09 -0.10 -0.11 -0.12 A -0.14 ID Safe operating area ID =f(VDS ) parameter : D = 0.01, TC =25°C Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 Tj -45 -46 -47 -48 -49 -50 -51 -52 -53 -54 -55 -56 -57 -58 V -60 V (BR)DSS

Semiconductor Group 6 18/02/1997 BSS 84 Typ. output characteristics ID = ƒ(VDS ) parameter: tp = 80 µs , Tj = 25 °C VDS 0.00 -0.02 -0.04 -0.06 -0.08 -0.10 -0.12 -0.14 -0.16 -0.18 -0.20 -0.22 -0.24 -0.26 A -0.30 ID VGS [V] a a -2.0 b b -2.5 c c -3.0 d d -3.5 e e -4.0 f f -4.5 g g -5.0 h h -6.0 i i -7.0 j j -8.0 k k -9.0 l P tot = 0W l -10.0 Typ. drain-source on-resistance R DS (on) = ƒ(ID ) parameter: tp = 80 µs, Tj = 25 °C ID Ω R DS (on) VGS [V] = a -2.0 VGS [V] = a a -2.5 b b -3.0 c c -3.5 d d -4.0 e e -4.5 f f -5.0 g g -6.0 h h -7.0 i i -8.0 j j -9.0 k k -10.0 Typ. transfer characteristics ID = f(VGS ) parameter: tp = 80 µs VDS ≥ 2 x ID x R DS(on)max V GS 0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 A -0.9 ID Typ. forward transconductance gfs = f (ID ) parameter: tp = 80 µs, VDS ≥2 x ID x R DS(on)max ID 0.00 0.02 0.04 0.06 0.08 0.10 0.12 S 0.16 gfs

7 18/02/1997Semiconductor Group BSS 84 Drain-source on-resistance R DS (on) = ƒ(Tj) parameter: ID = -0.13 A, VGS = -10 V -60 -20 20 60 100 °C 160 Tj Ω R DS (on) typ 98% Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS , ID = -1 mA 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 -3.6 -4.0 V -4.6 V GS(th) -60 -20 20 60 100 °C 160 Tj typ 98% Typ. capacitances C = f (VDS ) parameter:VGS =0V, f = 1 MHz 0 -5 -10 -15 -20 -25 -30 V -40 V DS 0 10 1 10 2 10 3 10 pF C C rss C oss C iss Forward characteristics of reverse diode IF = ƒ(VSD ) parameter: Tj, tp = 80 µs -3 -10 -2 -10 -1 -10 0 -10 A IF VSD Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)