BSS84-HF COMCHIP | Alldatasheet

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  • VDS(V) = -50V - ID = -130mA - RDS(ON) < 10Ω (VGS= -5V) Mechanical data - Case: SOT-23, molded plastic. - Mounting position: Any. Parameter Symbol Value Unit VDS VGS ID IDM PD RθJA TJ TSTG V V A A mW °C/W -50 ±20 -0.13 -0.52 225 556 150 -55 to +150 Drain-source voltage Gate-source voltage Continuous drain current Storage temperature Junction temperature Thermal resistance from junction to ambient Power dissipation Pulsed drain current @ tp < 10s Circuit Diagram - G: Gate - S: Source - D: Drain G S D Notes: 1. Switching time is essentially independent of operating temperature. Parameter Symbol Min UnitTest Conditions Typ Max Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Gate threshold voltage Static drain-source on-resistance Forward transconductance Input capacitance VDSS IDSS IGSS Output capacitance Reverse transfer capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Gate charge Diode forward voltage Maximum body-diode continuous current Maximum body-diode pulsed current VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf VSD ISM IS QT ISD = -130mA, VGS = 0V VDD = -15V, ID = -0.25A, RL = 50Ω (Note 1) VGS = 0V, VDS = -5V, f = 1MHz VDS = -25V, ID = -100mA, f = 1KHz VGS = -5V, ID = -100mA VDS = VGS, ID = -1mA A V V µA µA V PC ns pF mS VDS = -25V, VGS = 0V VDS = -50V, VGS = 0V VDS = 0V, VGS = ±20V ID = -250µA, VGS = 0V -50 -0.1 -15 ±10 -2-0.8 10 Ω 2.5 6000 -0.13 -0.52 -2.5

Typical characteristics (at TA=25°C unless otherwise noted) 0.3 0.4 0.1 0.6 0.2 1 1.5 2 2.5 3 VDS=10V 150°C 25°C - 55°C 0 2 4 10 0.15 0.2 0.05 0.3 0.1 3.5 0.5 0.25 1 3 95 7 3.25 V 2.75 V 2.25 V 2.5 V 3.0 V VGS =3.5 V 0.35 0.4 0.5

0.45 TJ=25°C

0 0.2 0.4 0.6 5 25°C VGS=4.5V 0 0.2 VGS=10V 0.1 0.3 0.5 150°C - 55°C 4.5 5.5 3.5 2.5 6.5 0.1 0.3 0.5 150°C 25°C - 55°C Comchip Technology CO., LTD. Page 2SP-JTR25 P-Channel MOSFET Fig.1 - Transfer Characteristics Fig.2 - On-Region Characteristics Fig.3 - On-Resistance versus Drain Current Fig.4 - On-Resistance versus Drain Current Gate-to-Source Voltage, VGS (V) Drain-to-Source Voltage, VDS (V) Drain Current, ID (A) Drain Current, ID (A) Drain Current, ID (A) Drain Current, ID (A) Drain-to-Source Resistance, RDS(on) (Ω) Drain-to-Source Resistance, RDS(on) (Ω) 0.4 0.6 REV:C

0.001 0.1 VGS=10V ID=0.52A - 55 -5 45 95 145 TJ=150°C 0.6 0.8 0 0.5 1.0 1.5 0.01 -55°C25°C 2.0 500 VDS=40V TJ=25°C 1000 ID= 0.5 A 1500 1.2 1.4 1.6 1.8 VGS=4.5V ID=0.13A 2000 2.5 3.0 Comchip Technology CO., LTD. Page 3SP-JTR25 P-Channel MOSFET Fig.5 - On-Resistance Variation with Temperature Fig.6 - Gate Charge Junction Temperature, TJ (°C) Total Gate Charge, QT (pC) Fig.7 - Body Diode Forward Voltage Diode Forward Voltage, VSD (V) Diode Current, ID (A) Gate-to-Source Voltage, VGS (V) Drain-to-Source Resistance, RDS(on) (Normalized) REV:C

(mm) SOT-23 SYMBOL (mm) 4.00 ± 0.10 1.55 ± 0.10 178 ± 1 D1 D2 D Reel Taping Specification Comchip Technology CO., LTD. Page 4SP-JTR25 P-Channel MOSFET C Index hole d E F B W P A Trailer Device Leader 400mm (min)160mm (min) Direction of Feed 120° REV:C

Comchip Technology CO., LTD. Page 5SP-JTR25 P-Channel MOSFET Case Type SOT-23 3,000 REEL ( pcs ) Reel Size (inch) REEL PACK Standard Packaging B84. B84 Suggested P.C.B. PAD Layout SIZE (inch) 0.031 (mm) 0.80 1.90 2.02 0.075 0.080 SOT-23 2.82 0.111 A B C D A C B D REV:C