BSS83PH6327XTSA1 INFINEON | Alldatasheet

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/c183 P-Channel /c183 Enhancement mode /c183 Avalanche rated /c183 Logic Level /c183 dv/dt rated Product Summary Drain source voltage VVDS -60 Drain-source on-state resistanceR DS(on) 2 /c87 Continuous drain current AID -0.33 VPS05161 Type Package Tape and Reel BSS 83 P PG- SOT-23 H 6327 : 3000pcs/r. Marking YAs Pin 1 PIN 2 PIN 3 G S D Maximum Ratings ,at Tj = 25 °C, unless otherwise specified Parameter Symbol UnitValue -0.33 -0.27 AContinuous drain current TA = 25 °C TA = 70 °C ID Pulsed drain current TA = 25 °C ID puls -1.32 Avalanche energy, single pulse ID = -0.33 A , V DD = -25 V, R GS = 25 /c87 9.5 mJEAS Avalanche energy, periodic limited by Tjmax EAR 0.036 dv/dt 6Reverse diode dv/dt IS = -0.33 A, V DS = -48 V, di/dt = 200 A/µs, Tjmax = 150 °C kV/µs Gate source voltage VGS /c177 20 V Power dissipation TA = 25 °C Ptot 0.36 W Operating and storage temperature Tj , Tstg -55...+150 °C IEC climatic category; DIN IEC 68-1 55/150/56

  • Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 ESD Class; JESD22-A114-HBM Class 0

20 12-03-30Rev. 1.5 Page 2 BSS 83 P Thermal Characteristics Parameter Symbol UnitValues min. max.typ. Characteristics Thermal resistance, junction - soldering point ( Pin 3 )

150 K/W-RthJS -

SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) RthJA 350 300 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -250 µA V(BR)DSS -60 - V- Gate threshold voltage, VGS = VDS ID = -80 µA -1 -1.5 -2VGS(th) Zero gate voltage drain current VDS = -60 V, V GS = 0 V, Tj = 25 °C VDS = -60 V, V GS = 0 V, Tj = 125 °C µA -100 IDSS -0.1 -10 IGSS - -10 -100Gate-source leakage current VGS = -20 V, VDS = 0 V nA Drain-source on-state resistance VGS = -4.5 V, ID = -0.27 A RDS(on) - 2 3 /c87 Drain-source on-state resistance VGS = -10 V, ID = -0.33 A RDS(on) - 1.4 2 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

20 12-03-30Rev. 1.5 Page 3 BSS 83 P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS /c179 2*ID*R DS(on)max , ID = -0.27 A 0.24gfs S-0.47 Input capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz C iss 62 78 pF- C oss - 2419Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz 97C rss - Turn-on delay time VDD = -30 V, V GS = -4.5 V, ID = -0.27 A, R G = 43 /c87 - 35 ns23td(on) Rise time VDD = -30 V, V GS = -4.5 V, ID = -0.27 A, R G = 43 /c87 tr - 10671 56 70td(off)Turn-off delay time VDD = -30 V, V GS = -4.5 V, ID = -0.27 A, R G = 43 /c87 Fall time VDD = -30 V, V GS = -4.5 V, ID = -0.27 A, R G = 43 /c87 tf - 61 76

20 12-03-30Rev. 1.5 Page 4 BSS 83 P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified UnitValuesSymbolParameter min. typ. max. Dynamic Characteristics Gate to source charge VDD = -48 V, ID = -0.33 A -Q gs nC0.180.12 Gate to drain charge VDD = -48 , ID = -0.33 A Q gd 1.1 1.65- 3.57-Q gGate charge total VDD = -48 V, ID = -0.33 A, V GS = 0 to -10 V 2.38 Gate plateau voltage VDD = -48 V , ID = -0.33 A V(plateau) - -2.94 - V Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TA = 25 °C IS - - -0.33 A Inverse diode direct current,pulsed TA = 25 °C ISM - - -1.32 Inverse diode forward voltage VGS = 0 V, IF = -0.33 VSD - -0.84 -1.1 V Reverse recovery time VR = -30 V, IF=IS , diF/dt = 80 A/µs trr - 59.4 89 ns Reverse recovery charge VR = -30 V, IF =lS , diF/dt = 80 A/µs Q rr - 37.5 56 nC

20 12-03-30Rev. 1.5 Page 5 BSS 83 P Drain current ID = f (TA ) parameter: VGS /c179 10 V 0 20 40 60 80 100 120 °C 160 TA 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 -0.28 A -0.36 BSS 83 P ID Power Dissipation Ptot = f (TA) 0 20 40 60 80 100 120 °C 160 TA 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 W 0.38 BSS 83 P Ptot Transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s tp -1 10 0 10 1 10 2 10 3 10 K/W BSS 83 P ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 °C -10 -1 -10 0 -10 1 -10 2 V VDS -3 -10 -2 -10 -1 -10 0 -10 1 -10 A BSS 83 P ID R D S on) = V D S / I D DC 10 ms 1 ms 100 µs tp = 88.0µs

20 12-03-30Rev. 1.5 Page 6 BSS 83 P Typ. drain-source-on-resistance RDS(on) = f (ID ) parameter: VGS ID 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 /c87 6.5 BSS 83 P R DS(on) a VGS [V] = a -2.5 b b -3.0 c c -3.5 d d -4.0 e e -4.5 f f -5.0 g g -5.5 h h -6.0 i i -6.5 j j -7.0 k k -8.0 l l -10.0 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs VDS 0.00 -0.10 -0.20 -0.30 -0.40 -0.50 -0.60 A -0.80 BSS 83 P ID VGS [V] a a -2.5 b b -3.0 c c -3.5 d d -4.0 e e -4.5 f f -5.0 g g -5.5 h h -6.0 i i -6.5 j j -7.0 k k -8.0 l Ptot = 0W l -10.0 Typ. transfer characteristics ID= f ( VGS ) VDS /c179 2 x ID x R DS(on)max parameter: tp = 80 µs VGS 0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 A -1.2 ID Typ. forward transconductance gfs = f(ID ); Tj=25°C parameter: gfs ID 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 S 0.70 gfs

20 12-03-30Rev. 1.5 Page 7 BSS 83 P Drain-source on-state resistance R DS(on) = f (Tj) parameter : ID = -0.33 A, VGS = -10 V -60 -20 20 60 100 °C 180 Tj 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 /c87 5.5 BSS 83 P R DS(on) typ 98% Gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS , ID = -80 µA -60 -20 20 60 100 °C 160 Tj 0.0 -0.5 -1.0 -1.5 -2.0 V -3.0 V GS(th) -60 -20 20 60 100 °C 160 Tj 0.0 -0.5 -1.0 -1.5 -2.0 V -3.0 V GS(th) typ -60 -20 20 60 100 °C 160 Tj 0.0 -0.5 -1.0 -1.5 -2.0 V -3.0 V GS(th) 98% -60 -20 20 60 100 °C 160 Tj 0.0 -0.5 -1.0 -1.5 -2.0 V -3.0 V GS(th) Typ. capacitances C = f (VDS ) parameter: VGS =0V, f=1 MHz 0 -5 -10 -15 -20 -25 V -35 VDS 0 10 1 10 2 10 3 10 pF C C iss C oss C rss Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs VSD -2 -10 -1 -10 0 -10 1 -10 A BSS 83 P IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

20 12-03-30Rev. 1.5 Page 8 BSS 83 P Avalanche energy EAS = f (Tj) para.: ID = -0.33 A , VDD = -25 V, R GS = 25 25 45 65 85 105 125 °C 165 Tj mJ E AS Typ. gate charge VGS = f (Q Gate) parameter: ID = -0.33 A pulsed Q Gate -10 -12 V -16 BSS 83 P VGS DS maxV0,8 DS maxV0,2 Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj -54 -56 -58 -60 -62 -64 -66 -68 V -72 BSS 83 P V(BR)DSS

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© 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2012-03-30Rev. 1.5 Page 8 BSS 83 P