BSS83P

BSS83P INFINEON | Alldatasheet

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/c183 P-Channel /c183 Enhancement mode /c183 Avalanche rated /c183 Logic Level /c183 dv/dt rated Product Summary Drain source voltage VVDS -60 Drain-source on-state resistanceR DS(on) 2 /c87 Continuous drain current AID -0.33 VPS05161 Type Package Ordering Code BSS 83 P SOT-23 Q67041-S1416 Marking YAs Pin 1 PIN 2 PIN 3 G S D Maximum Ratings ,at Tj = 25 °C, unless otherwise specified Parameter Symbol UnitValue -0.33 -0.27 AContinuous drain current TA = 25 °C TA = 70 °C ID Pulsed drain current TA = 25 °C ID puls -1.32 Avalanche energy, single pulse ID = -0.33 A , V DD = -25 V, R GS = 25 /c87 9.5 mJEAS Avalanche energy, periodic limited by Tjmax EAR 0.036 dv/dt 6Reverse diode dv/dt IS = -0.33 A, V DS = -48 V, di/dt = 200 A/µs, Tjmax = 150 °C kV/µs Gate source voltage VGS /c177 20 V Power dissipation TA = 25 °C Ptot 0.36 W Operating and storage temperature Tj , Tstg -55...+150 °C IEC climatic category; DIN IEC 68-1 55/150/56

BSS 83 PRev. 1.0 Thermal Characteristics Parameter Symbol UnitValues min. max.typ. Characteristics Thermal resistance, junction - soldering point ( Pin 3 )

150 K/W-RthJS -

SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) RthJA 350 300 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -250 µA V(BR)DSS -60 - V- Gate threshold voltage, VGS = VDS ID = -80 µA -1 -1.5 -2VGS(th) Zero gate voltage drain current VDS = -60 V, V GS = 0 V, Tj = 25 °C VDS = -60 V, V GS = 0 V, Tj = 125 °C µA -100 IDSS -0.1 -10 IGSS - -10 -100Gate-source leakage current VGS = -20 V, VDS = 0 V nA Drain-source on-state resistance VGS = -4.5 V, ID = -0.27 A RDS(on) - 2 3 /c87 Drain-source on-state resistance VGS = -10 V, ID = -0.33 A RDS(on) - 1.4 2 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

BSS 83 PRev. 1.0 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS /c179 2*ID*R DS(on)max , ID = -0.27 A 0.24gfs S-0.47 Input capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz C iss 62 78 pF- C oss - 2419Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz 97C rss - Turn-on delay time VDD = -30 V, V GS = -4.5 V, ID = -0.27 A, R G = 43 /c87 - 35 ns23td(on) Rise time VDD = -30 V, V GS = -4.5 V, ID = -0.27 A, R G = 43 /c87 tr - 10671 56 70td(off)Turn-off delay time VDD = -30 V, V GS = -4.5 V, ID = -0.27 A, R G = 43 /c87 Fall time VDD = -30 V, V GS = -4.5 V, ID = -0.27 A, R G = 43 /c87 tf - 61 76

BSS 83 PRev. 1.0 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified UnitValuesSymbolParameter min. typ. max. Dynamic Characteristics Gate to source charge VDD = -48 V, ID = -0.33 A -Q gs nC0.180.12 Gate to drain charge VDD = -48 , ID = -0.33 A Q gd 1.1 1.65- 3.57-Q gGate charge total VDD = -48 V, ID = -0.33 A, V GS = 0 to -10 V 2.38 Gate plateau voltage VDD = -48 V , ID = -0.33 A V(plateau) - -2.94 - V Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TA = 25 °C IS - - -0.33 A Inverse diode direct current,pulsed TA = 25 °C ISM - - -1.32 Inverse diode forward voltage VGS = 0 V, IF = -0.33 VSD - -0.84 -1.1 V Reverse recovery time VR = -30 V, IF=IS , diF/dt = 80 A/µs trr - 59.4 89 ns Reverse recovery charge VR = -30 V, IF=lS , diF/dt = 80 A/µs Q rr - 37.5 56 nC

BSS 83 PRev. 1.0 Drain current ID = f (TA ) parameter: VGS /c179 10 V 0 20 40 60 80 100 120 °C 160 TA 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 -0.28 A -0.36 BSS 83 P ID Power Dissipation Ptot = f (TA) 0 20 40 60 80 100 120 °C 160 TA 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 W 0.38 BSS 83 P Ptot Transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s tp -1 10 0 10 1 10 2 10 3 10 K/W BSS 83 P ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 °C -10 -1 -10 0 -10 1 -10 2 V VDS -3 -10 -2 -10 -1 -10 0 -10 1 -10 A BSS 83 P ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs tp = 88.0µs

BSS 83 PRev. 1.0 Typ. drain-source-on-resistance RDS(on) = f (ID ) parameter: VGS ID 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 /c87 6.5 BSS 83 P R DS(on) a VGS [V] = a -2.5 b b -3.0 c c -3.5 d d -4.0 e e -4.5 f f -5.0 g g -5.5 h h -6.0 i i -6.5 j j -7.0 k k -8.0 l l -10.0 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs VDS 0.00 -0.10 -0.20 -0.30 -0.40 -0.50 -0.60 A -0.80 BSS 83 P ID VGS [V] a a -2.5 b b -3.0 c c -3.5 d d -4.0 e e -4.5 f f -5.0 g g -5.5 h h -6.0 i i -6.5 j j -7.0 k k -8.0 l Ptot = 0W l -10.0 Typ. transfer characteristics ID= f ( VGS ) VDS /c179 2 x ID x R DS(on)max parameter: tp = 80 µs VGS 0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 A -1.2 ID Typ. forward transconductance gfs = f(ID ); Tj=25°C parameter: gfs ID 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 S 0.70 gfs

BSS 83 PRev. 1.0 Drain-source on-state resistance R DS(on) = f (Tj) parameter : ID = -0.33 A, VGS = -10 V -60 -20 20 60 100 °C 180 Tj 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 /c87 5.5 BSS 83 P R DS(on) typ 98% Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = -80 µA -60 -20 20 60 100 °C 160 Tj 0.0 -0.5 -1.0 -1.5 -2.0 V -3.0 V GS(th) -60 -20 20 60 100 °C 160 Tj 0.0 -0.5 -1.0 -1.5 -2.0 V -3.0 V GS(th) typ -60 -20 20 60 100 °C 160 Tj 0.0 -0.5 -1.0 -1.5 -2.0 V -3.0 V GS(th) 98% -60 -20 20 60 100 °C 160 Tj 0.0 -0.5 -1.0 -1.5 -2.0 V -3.0 V GS(th) Typ. capacitances C = f (VDS ) parameter: VGS =0V, f=1 MHz 0 -5 -10 -15 -20 -25 V -35 VDS 0 10 1 10 2 10 3 10 pF C C iss C oss C rss Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs VSD -2 -10 -1 -10 0 -10 1 -10 A BSS 83 P IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

BSS 83 PRev. 1.0 Avalanche energy EAS = f (Tj) para.: ID = -0.33 A , VDD = -25 V, R GS = 25 25 45 65 85 105 125 °C 165 Tj mJ E AS Typ. gate charge VGS = f (Q Gate) parameter: ID = -0.33 A pulsed Q Gate -10 -12 V -16 BSS 83 P VGS DS maxV0,8 DS maxV0,2 Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj -54 -56 -58 -60 -62 -64 -66 -68 V -72 BSS 83 P V(BR)DSS

BSS 83 PRev. 1.0 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.