BSS83 NJSEMI | Alldatasheet

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Technical content

MOSFET N-channel enhancement switching transistor BSS83

DESCRIPTION

Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances. The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate.

APPLICATIONS

  • analog and/or digital switch
  • switch driver PINNING 1 = substrate (b) 2 = source 3 = drain 4 = gate Note 1. Drain and source are interchangeable. Marking code: BSS83 = M74 Top view Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Drain-source voltage Source-drain voltage Drain-substrate voltage Source-substrate voltage Drain current (DC) Total power dissipation up to Tamb = 25 °C Gate-source threshold voltage VDS = VGS> VSB = 0; ID = 1 jiA Drain-source ON-resistance VGS = 10 V; VSB = 0; ID = 0.1 mA Feed-back capacitance VDS max. VSD max. VDB max. VSB max. ID max. Ptot max. VGSOT RDSon < 10 V 10 V 15 V 15 V 50 mA 230 mW 0.1 V 2.0 V 45 n VDS= 10V;f= 1 MHz typ. 0.6 pF April 1991

MOSFET N-channel enhancement switching transistor BSS83 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage VDS Source-drain voltage VSo Drain-substrate voltage VDB Source-substrate voltage VSB Drain current (DC) ID Total power dissipation up to Tamb = 25 °C(1> Ptot Storage temperature range Tstg max. max. max. max. max. max. 10 V 10 V 15 V 15 V 50 mA 230 mW Junction temperature -65 to+ 150 max. 125 THERMAL RESISTANCE From junction to ambient in free air'1' Mh j-a

430 K/W

MOSFET N-channel enhancement switching transistor BSS83 CHARACTERISTICS Tamb = 25 °C unless otherwise specified Drain-source breakdown voltage VGS = VBS = -5V;lD=10nA Source-drain breakdown voltage Drain-substrate breakdown voltage VQB = 0; ID = 10 nA; open source Source-substrate breakdown voltage VQB = 0; ID = 10 nA; open drain Drain-source leakage current VGS = VBS = -2 V; VDS = 6,6 V Source-drain leakage current VGD = VBD = -2 V; VSD = 6,6 V Forward transconductance at f = 1 kHz VDS=10V;VSB = 0;lD = 20mA Gate-source threshold voltage VDS = VGS; VSB = 0; ID = 1 nA Drain-source ON-resistance ID = 0,1 mA; VGS = 5 V; VSB = 0 VGS = 10V; VSB = 0 VGS = 3,2 V; VSB = 6,8 V (see Fig.4) Gate-substrate zener voltages VDB = VSB = 0; -IG = 10 ^A VDB = VSB = 0; +IG = 10|iA Capacitances at f = 1 MHz VGS = VBS = -15V; VDS = 10V Feed-back capacitance Input capacitance Output capacitance Switching times (see Fig. 2) VDD= 10V; V| = 5V Note 1 . Device mounted on a ceramic substrate of 8 mm x 10 mm x 0,7 mm. V(BR)DSX > V(BR)SDX > V(BR)DBO > V(BR)SBO > tosoff < IsDoff < 9fs typ. VcS(th) RDSon < Roson < R W' KDSon VZ(1) > VZ(2) Crss typ. Ciss typ. Coss typ. ton typ. toff typ. 10 V 10 V 15 V 15 V 10 nA 10 nA 10 mS 15 mS 0,1 V 2,0 V 70 Q. 45 Q 80 ii 120 n 12,5 V 12,5 V 0,6 pF 1,5 pF 1,0 pF 1,0 ns 5,0 ns April 1991

MOSFET N-channel enhancement switching transistor BSS83 Pulse generator: RI 50 fJ tr < 0,5 ns tf < 1,0 ns 20 ns 5 < 0,01 so n °-1 ^ VDD —d=l—f—II— vn 630 n T.U.T INPUT OUTPUT 10% Fig.2 Switching times test circuit and input and output waveforms. TJ = 25 °C. Fig.3 VSB = 0; typical values. 1.2 ID (mA) 0.8 0.4 MOV 32V 80 „ , 120 vDSon <mv) Fig. 4 VSB = 6,8 V; typical values. April 1991

MOSFET N-channel enhancement switching transistor BSS83 ID (mA) C Tj = 25 Fi MDA2S2 f y f 1234 °C. g.5 VDS = 10 V; VBS = 0; typical values. 0 1 2 3.... 4 = 25 °C. Fig.6 VDS = VGs = VGS(th)- 20 40 60 80 100 vDSon (mV) Fig.7 VSB = 0; typical values. ApriM991

MOSFET N-channel enhancement switching transistor BSS83 PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B -H bp scale DIMENSIONS (mm are the original dimensions) UNIT 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION SOT143B REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION -E30 ISSUE DATE 97-02-28 April1991