BSS80 INFINEON | Alldatasheet
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Technical content
BSS80, BSS82
1 Nov-30-2001
PNP Silicon Switching Transistors /G01 High DC current gain: 0.1mA to 500 mA /G01 Low collector-emitter saturation voltage /G01 Complementary types: BSS79, BSS81 (NPN) VPS05161 Type Marking Pin Configuration Package BSS80B BSS80C BSS82B BSS82C CHs CJs CLs CMs 1 = B 1 = B 1 = B 1 = B 2 = E 2 = E 2 = E 2 = E 3 = C 3 = C 3 = C 3 = C SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Symbol BSS80 BSS82 Unit Collector-emitter voltage VCEO 40 60 V Collector-base voltage VCBO 60 V Emitter-base voltage VEBO 5 DC collector current IC 800 mA Peak collector current ICM 1 A Base current IB 100 mA Peak base current IBM 200 Total power dissipation, TS = 77 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS /G01 220 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance
BSS80, BSS82
2 Nov-30-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BSS80 BSS82 V(BR)CEO V Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO 60 - - Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector cutoff current VCB = 50 V, IE = 0 ICBO - - 10 nA Collector cutoff current VCB = 50 V, IE = 0 , TA = 150 °C ICBO - - 10 µA Emitter cutoff current VEB = 3 V, IC = 0 IEBO - - 10 nA DC current gain 1) IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V BSS80/82B BSS80/82C BSS80/82B BSS80/82C BSS80/82B BSS80/82C BSS80/82B BSS80/82C BSS80/82B BSS80/82C hFE 100 100 100 120 300 Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VCEsat 0.4 1.6 V Base-emitter saturation voltage 1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VBEsat 1.3 2.6 1) Pulse test: t ≤=300µs, D = 2%
BSS80, BSS82
3 Nov-30-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz fT - 250 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 6 - pF Delay time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V td - - 10 ns Rise time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V tr - - 40 Storage time VCC = 30 V, IC = 150 mA, IB1=IB2 = 15mA tstg - - 80 Fall time VCC = 30 V, IC = 150 mA, IB1=IB2 = 15mA tf - - 30 Test circuits Delay and rise time Storage and fall time EHN00047 Input Z 0 200 Osc. rt -30 = 50 < 2 ns < 5 nstr 200 -16 Ω Ω Ω Ω V ns V k EHN00048 -30 +15 V 1 Ω Ω k V V < 2ns = 50 Input t Z r 0 Ω 200 ns 1 Ωk 50 Ω Osc. < 5 nstr
BSS80, BSS82
4 Nov-30-2001
Collector-base capacitance CCB = f (VCB) f = 1MHz EHP00680BSS 80/82 pF 10 10 V C CB cb 555-1 0 1 2 100 V Total power dissipation Ptot = f(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 120 150 180 210 240 270 300 mW 360 Ptot Transition frequency fT = f (IC) VCE = 20V EHP00682BSS 80/82 MHz 10 10 mA f C T 555 Ι 01 2 3 101 Permissible pulse load Ptotmax / PtotDC = f (tp) EHP00681BSS 80/82 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 totmax totP DC P pt tp =D T tp T
BSS80, BSS82
5 Nov-30-2001
Saturation voltage IC = f (VBEsat, VCEsat) hFE = 10 EHP00683BSS 80/82 0 V 10-1 100 mA 102 VBEVCE CE satBE satVV , ΙC Delay time td = f (IC) Rise time tr = f (IC) EHP00684BSS 80/82 10 mA 101 10 1001 2 5 5 ns 3105 td tr rt t, d CΙ CC CCV V = 0 V = 20 V BE BE , V = 30 V = 10 V, Fall time tf = f (IC) EHP00686BSS 80/82 10 mA 101 10 10012 5 5 ns FEh = 10 3105 FE = 20h VCC = 30 V tf CΙ Storage time tstg = f(IC) EHP00685BSS 80/82 10 mA t C stg 101 10 1001 2 Ι 5 5 ns FEh = 10 3105 FE = 20h
BSS80, BSS82
6 Nov-30-2001
DC current gain hFE = f (IC) VCE = 10V EHP00687BSS 80/82 10 mA h C FE 101 10 10 10-1 0 1 2 3 Ι -50 ˚C 25 ˚C 150 ˚C