BSS79 SIEMENS | Alldatasheet
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Technical content
NPN Silicon Switching Transistors BSS 79 BSS 81 Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BSS 79 B BSS 79 C BSS 81 B BSS 81 C Q62702-S503 Q62702-S501 Q62702-S555 Q62702-S605 CEs CFs CDs CGs SOT-23 1 2 3 B E C 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu. Parameter Symbol BSS 79 Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0 Emitter-base voltage VEB0 Collector current IC mA Base current IB mA Total power dissipation,TS =7 7˚ C Ptot mW Junction temperature Tj ˚C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 290 K/W Peak collector current ICM A Peak base current IBM BSS 81 800 100 330 150 200 Values Junction - soldering point Rth JS ≤ 220
- High DC current gain
- Low collector-emitter saturation voltage
- Complementary types: BSS 80, BSS 82 (PNP) 5.91
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. Base-emitter saturation voltage1) IC = 150 mA,IB = 15 mA IC = 500 mA,IB = 50 mA Collector-emitter saturation voltage1) IC = 150 mA,IB = 15 mA IC = 500 mA,IB = 50 mA DC current gain IC = 100µA, VCE = 10 V BSS 79 B/81 B BSS 79 C/81 C IC = 1 mA,VCE = 10 V BSS 79 B/81 B BSS 79 C/81 C IC = 10 mA,VCE = 10 V1) BSS 79 B/81 B BSS 79 C/81 C IC = 150 mA,VCE = 10 V1) BSS 79 B/81 B BSS 79 C/81 C IC = 500 mA,VCE = 10 V1) BSS 79 B/81 B BSS 79 C/81 C VCollector-emitter breakdown voltage IC = 10 mA BSS 79 BSS 81 V(BR)CE0 UnitValuesParameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 10µA V(BR)CB0 75 – – Emitter-base breakdown voltage IE = 10µA V(BR)EB0 6–– nAEmitter-base cutoff current VEB = 3 V IEB0 ––1 0 nA µA Collector-base cutoff current VCB = 60 V VCB = 60 V,TA = 150 ˚C ICB0 –hFE 100 120 300 VVCEsat 0.3 1.3 VBEsat 1.2 2.0 1) Pulse test conditions:t≤ 300 µs,D = 2 %.
atTA = 25 ˚C, unless otherwise specified. Test circuits Delay and rise time Storage and fall time Oscillograph:R > 100 kΩ C < 12 pF tr <5n s MHzTransition frequency IC = 20 mA,VCE = 20 V,f = 100 MHz fT – 250 – AC characteristics pFOpen-circuit output capacitance VCB = 10 V,f = 1 MHz C obo –6– UnitValuesParameter Symbol min. typ. max. ns ns ns ns V CC = 30 V,IC = 150 mA, IB1 =IB2 = 15 mA,VBE = 0.5 V Delay time Rise time Storage time Fall time t d tr tstg tf 250
Total power dissipationPtot= f(TA*;TS) * Package mounted on epoxy Permissible pulse loadPtot max/Ptot DC =f (tp) Collector-base capacitanceC cb = f(VCB ) f = 1 MHz Transition frequencyfT = f(IC ) VCE = 20 V
Saturation voltageIC =f(VBE sat) hFE =1 0 IC =f(VCE sat) Delay timetd = f(IC ) Rise time tr =f(IC ) DC current gainhFE = f(IC ) VCE =1 0V Storage timetstg = f(IC ) Fall time tf =f(IC )