BSS80 SIEMENS | Alldatasheet

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Technical content

PNP Silicon Switching Transistors BSS 80 BSS 82 Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BSS 80 B BSS 80 C BSS 82 B BSS 82 C Q62702-S557 Q62702-S492 Q62702-S560 Q62702-S482 CHs CJs CLs CMs SOT-23 1 2 3 B E C 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu. Parameter Symbol BSS 80 Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0 Emitter-base voltage VEB0 Collector current IC mA Base current IB mA Total power dissipation,TS =7 7˚ C Ptot mW Junction temperature Tj ˚C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 290 K/W Peak collector current ICM A Peak base current IBM BSS 82 800 100 330 150 200 Values Junction - soldering point Rth JS ≤ 220

  • High DC current gain
  • Low collector-emitter saturation voltage
  • Complementary types: BSS 79, BSS 81 (NPN) 5.91

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. Base-emitter saturation voltage1) IC = 150 mA,IB = 15 mA IC = 500 mA,IB = 50 mA Collector-emitter saturation voltage1) IC = 150 mA,IB = 15 mA IC = 500 mA,IB = 50 mA DC current gain IC = 100 µA, VCE = 10 V BSS 80 B/82 B BSS 80 C/82 C IC = 1 mA,VCE = 10 V BSS 80 B/82 B BSS 80 C/82 C IC = 10 mA,VCE = 10 V1) BSS 80 B/82 B BSS 80 C/82 C IC = 150 mA,VCE = 10 V1) BSS 80 B/82 B BSS 80 C/82 C IC = 500 mA,VCE = 10 V1) BSS 80 B/82 B BSS 80 C/82 C VCollector-emitter breakdown voltage IC = 10 mA BSS 80 BSS 82 V(BR)CE0 UnitValuesParameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 10µA V(BR)CB0 60 – – Emitter-base breakdown voltage IE = 10µA V(BR)EB0 5–– nAEmitter-base cutoff current VEB = 3 V IEB0 ––1 0 nA µA Collector-base cutoff current VCB = 50 V VCB = 50 V,TA = 150 ˚C ICB0 –hFE 100 100 100 120 300 VVCEsat 0.4 1.6 VBEsat 1.3 2.6 1) Pulse test conditions:t≤ 300 µs,D = 2 %.

atTA = 25 ˚C, unless otherwise specified. Test circuits Delay and rise time Storage and fall time MHzTransition frequency IC = 20 mA,VCE = 20 V,f = 100 MHz fT – 250 – AC characteristics pFOpen-circuit output capacitance VCB = 10 V,f = 1 MHz C obo –6– UnitValuesParameter Symbol min. typ. max. ns ns ns ns VCC = 30 V,IC = 150 mA, IB1 = 150 mA Delay time Rise time V CC = 6 V,IC = 150 mA, IB1 =IB2 = 15 mA Storage time Fall time t d tr tstg tf

Total power dissipationPtot= f(TA*;TS) * Package mounted on epoxy Permissible pulse loadPtot max/Ptot DC =f (tp) Collector-base capacitanceC cb = f(VCB ) f = 1 MHz Transition frequencyfT = f(IC ) VCE = 20 V

Saturation voltage IC =f (VBE sat, VCE sat) hFE =1 0 Storage time tstg = f(IC ) Delay timetd = f(IC ) Rise time tr =f(IC ) Fall time tf =f(IC )

DC current gainhFE = f(IC ) VCE =1 0V