BSS806NE INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

  • N-channel
  • Enhancement mode
  • Ultra Logic level (1.8V rated)
  • ESD protected
  • Avalanche rated
  • Qualified according to AEC Q101
  • 100% lead-free; RoHS compliant
  • Halogen-free according to IEC61249-2-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C 2.3 A T A=70 °C 1.9 Pulsed drain current I D,pulse T A=25 °C 9.3 Avalanche energy, single pulse E AS I D=2.3 A, R GS=25 W 10.8 mJ Reverse diode dv /dt dv /dt I D=2.3 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±8 V Power dissipation1) P tot T A=25 °C W Operating and storage temperature T j, T stg -55 ... 150 °C ESD Class JESD22-A114 -HBM 1C(1kV to 2kV) Soldering Temperature 260 °C IEC climatic category; DIN IEC 68-1 55/150/56 Value 0.5 VDS 20 V RDS(on),max VGS=2.5 V 57 mW VGS=1.8 V 82 ID 2.3 A Product Summary PG-SOT23 Type Package Tape and Reel Marking Halogen Free Packing BSS806NE SOT23 H6327: 3000 pcs/ reel YIs Yes Non dry Rev 2.01 page 1 2014-01-16

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint 1) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D= 250 µA 20 - - V Gate threshold voltage V GS(th) V DS=VGS , I D=11 µA 0.3 0.55 0.75 Drain-source leakage current I DSS V DS=20 V, V GS=0 V, T j=25 °C - - 1 mA V DS=20 V, V GS=0 V, T j=150 °C - - 100 Gate-source leakage current I GSS V GS=8 V, V DS=0 V - - 6 µA Drain-source on-state resistance R DS(on) V GS=1.8 V, I D=1.3 A - 57 82 mW V GS=2.5 V, I D=2.3 A - 41 57 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=1.9 A 9 - S Values 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides of the PCB. Rev 2.01 page 2 2014-01-16

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 370 529 pF Output capacitance C oss - 118 169 Reverse transfer capacitance Crss - 20 29 Turn-on delay time t d(on) - 7.5 - ns Rise time t r - 9.9 - Turn-off delay time t d(off) - 12.0 - Fall time t f - 3.7 - Gate Charge Characteristics Gate to source charge Q gs - 0.55 - nC Gate to drain charge Q gd - 0.58 - Gate charge total Q g - 1.7 - Gate plateau voltage V plateau - 1.5 - V Reverse Diode Diode continous forward current I S - - 0.5 A Diode pulse current I S,pulse - - 9.3 Diode forward voltage V SD V GS=0 V, I F=2.3 A, T j=25 °C - 0.82 1.1 V Reverse recovery time t rr - 11 - ns Reverse recovery charge Q rr - 3.3 - nC V R=10 V, I F=2.3 A, di F/dt =100 A/µs T A=25 °C Values V GS=0 V, V DS=10 V, f =1 MHz V DD=10 V, V GS=2.5 V, I D=2.3A, R G,ext=6 W V DD=10 V, I D=2.3 A, V GS=0 to 2.5 V Rev 2.01 page 3 2014-01-16

1 Power dissipation 2 Drain current

P tot=f(T A) I D=f(T A); V GS≥2.5 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 10 µs 100 µs 1 ms 10 ms DC 10-1 100 101 102 10-3 10-2 10-1 100 101 102 ID [A] VDS [V] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-5 10-4 10-3 10-2 10-1 100 101 102 10-1 100 101 102 103 ZthJA [K/W] tp [s] 0.125 0.25 0.375 0.5 0 40 80 120 160 Ptot [W] TA [°C] 0.0 0.5 1.0 1.5 2.0 2.5 0 20 40 60 80 100 120 140 160 ID [A] TA [°C] Rev 2.01 page 4 2014-01-16

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0 2 4 6 8 gfs [S] ID [A] 25 °C 150 °C ID [A] VGS [V] 1.1 V 1.2 V 1.3 V 1.4 V 1.5 V 1.6 V 1.8 V 2.5 V ID [A] VDS [V] 1.3 V 1.4 V 1.5 V 1.6 V 1.8 V 2 V 2.5 V 100 120 0 1 2 3 4 RDS(on) [mW] ID [A] Rev 2.01 page 5 2014-01-16

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=2.3 A; V GS=2.5 V V GS(th)=f(T j); V DS=VGS; I D=11 µA parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j typ 98 % 100 -60 -20 20 60 100 140 180 RDS(on) [mW] Tj [°C] typ 98 % 2 % -0.4 0.4 0.8 1.2 -60 -20 20 60 100 140 180 VGS(th) [V] Tj [°C] Ciss Coss Crss 101 102 103 0 5 10 15 20 C [pF] VDS [V] 25 °C 150 °C 25 °C, 98% 150 °C, 98% 10-3 10-2 10-1 100 101 0 0.4 0.8 1.2 1.6 IF [A] VSD [V] Rev 2.01 page 6 2014-01-16

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=2.3 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=250 µA -60 -20 20 60 100 140 180 VBR(DSS) [V] Tj [°C] 4 V 10 V 16 V 0.5 1.5 2.5 3.5 4.5 VGS [V] Qgate [nC] 25 °C 100 °C 125 °C 100 101 102 103 10-1 100 101 IAV [A] tAV [µs] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g Rev 2.01 page 7 2014-01-16

Package Outline: Footprint: Packaging: Dimensions in mm Rev 2.01 page 8 2014-01-16

81726 Munich, Germany

© 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.01 page 9 2014-01-16