BSS79 INFINEON | Alldatasheet
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Technical content
BSS79, BSS81
1 Nov-30-2001
NPN Silicon Switching Transistors /G01 High DC current gain: 0.1mA to 500 mA /G01 Low collector-emitter saturation voltage /G01 Complementary types: BSS80, BSS82 (PNP) VPS05161 Type Marking Pin Configuration Package BSS79B BSS79C BSS81B BSS81C CEs CFs CDs CGs 1 = B 1 = B 1 = B 1 = B 2 = E 2 = E 2 = E 2 = E 3 = C 3 = C 3 = C 3 = C SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Symbol BSS79 BSS81 Unit Collector-emitter voltage VCEO 40 35 V Collector-base voltage VCBO 75 V Emitter-base voltage VEBO 6 DC collector current IC 800 mA Peak collector current ICM 1 A Base current IB 100 mA Peak base current IBM 200 Total power dissipation, TS = 77 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS /G01 220 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance
BSS79, BSS81
2 Nov-30-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BSS79 BSS81 V(BR)CEO V Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO 75 - - Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 6 - - Collector cutoff current VCB = 60 V, IE = 0 ICBO - - 10 nA Collector cutoff current VCB = 60 V, IE = 0 , TA = 150 °C ICBO - - 10 µA Emitter cutoff current VEB = 3 V, IC = 0 IEBO - - 10 nA DC current gain 1) IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V BSS79/81B BSS79/81C BSS79/81B BSS79/81C BSS79/81B BSS79/81C BSS79/81B BSS79/81C BSS79/81B BSS79/82C hFE 100 120 300 Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VCEsat 0.3 1.3 V Base-emitter saturation voltage 1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VBEsat 1.2 2.0 1) Pulse test: t ≤=300µs, D = 2%
BSS79, BSS81
3 Nov-30-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz fT - 250 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 6 - pF Delay time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V td - - 10 ns Rise time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V tr - - 25 Storage time VCC = 30 V, IC = 150 mA, IB1=IB2 = 15mA tstg - - 250 Fall time VCC = 30 V, IC = 150 mA, IB1=IB2 = 15mA tf - - 60 Test circuits Delay and rise time Storage and fall time EHN00045 200 Osc. 619 9.9 0 0.5 Ω Ω V V V EHN00046 200 Osc. 16.2 -13.8 -3.0 µ500~s s~100 µ < 5 ns Ω Ω V V V V k Oscillograph: R > 100k/G01 C < 12pF tr < 5ns
BSS79, BSS81
4 Nov-30-2001
Collector-base capacitance CCB = f (VCB) f = 1MHz EHP00672BSS 79/81 pF 10 10 V C CB cb 555-1 0 1 2 100 V Total power dissipation Ptot = f(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 120 150 180 210 240 270 300 mW 360 Ptot Transition frequency fT = f (IC) VCE = 20V EHP00674BSS 79/81 10 10 mA f C MHz T 555 Ι 01 2 3 10 1 Permissible pulse load Ptotmax / PtotDC = f (tp) EHP00673BSS 79/81 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 tp =D T tp T totmax totP DC P pt
BSS79, BSS81
5 Nov-30-2001
DC current gain hFE = f (IC) VCE = 10V EHP00676BSS 79/81 10 mA h C FE 101 10 10 10-1 0 1 2 3 Ι -50 ˚C 25 ˚C 150 ˚C Saturation voltage IC = f (VBEsat, VCEsat) hFE = 10 EHP00756 0 V BE sat C 101 100 Ι V mA CE satV, 102 V BEV CE Storage time tstg = f (IC) Fall time tf = f (IC) EHP00678BSS 79/81 10 mA t C stg 101 10 10123 Ι 5 5 ns FEh tf, hFE stgt ft = 10 = 20 FEh = 10 Delay time td = f (IC) Rise time tr = f (IC) EHP00677BSS 79/81 ns 10 10 mA t C d 555 Ι 01 2 3 101 rt, hFE td trtr VCC = 30 V = 10 VBE = 5 V = 2 V = 0 V VBE V BE td