BSS7728N INFINEON | Alldatasheet

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Rev. 2.0 BSS7728N SIPMOSÒ Small-Signal-Transistor Product Summary VDS 60 V RDS(on) 5 Ω ID 0.2 A Feature

  • N-Channel
  • Enhancement mode
  • Logic Level
  • dv/dt rated SOT-23 Gate pin1 Drain pin 3 Source pin 2 Marking sSK Type Package Ordering Code Tape and Reel Information BSS7728N SOT-23 Q67042-S4189 E6327: 3000 pcs/reel Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID 0.2 0.16 A Pulsed drain current TA=25°C ID puls 0.8 Reverse diode dv/dt IS=0.2A, VDS=48V, di/dt=200A/µs, Tjmax=150°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TA=25°C Ptot 0.36 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56

Rev. 2.0 BSS7728N Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - ambient at minimal footprint RthJA - - 350 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=250µA V(BR)DSS 60 - - V Gate threshold voltage, VGS = VDS ID=26µA VGS(th) 1.3 1.9 2.3 Zero gate voltage drain current VDS=60V, VGS=0, Tj=25°C VDS=60V, VGS=0, Tj=150°C IDSS 0.1 µA Gate-source leakage current VGS=20V, VDS=0 IGSS - 1 10 nA Drain-source on-state resistance VGS=4.5V, ID=0.05A RDS(on) - 4.3 7.5 Ω Drain-source on-state resistance VGS=10V, ID=0.5A RDS(on) - 2.7 5

Rev. 2.0 BSS7728N Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥ 2*ID*RDS(on)max, ID=0.16A 0.1 0.2 - S Input capacitance Ciss VGS=0, VDS=25V, f=1MHz - 37 56 pF Output capacitance Coss - 7.3 11 Reverse transfer capacitance Crss - 2.9 4.4 Turn-on delay time td(on) VDD=30V, VGS=10V, ID=0.2A, RG=6Ω - 2.7 4 ns Rise time tr - 2.7 4.1 Turn-off delay time td(off) - 6.1 9.1 Fall time tf - 9 13 Gate Charge Characteristics Gate to source charge Qgs VDD=48V, ID=0.2A - 0.12 0.18 nC Gate to drain charge Qgd - 0.43 0.65 Gate charge total Qg VDD=48V, ID=0.2A, VGS=0 to 10V - 1 1.5 Gate plateau voltage V(plateau) VDD=48V, ID = 0.2 A - 3.8 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - 0.2 A Inv. diode direct current, pulsed ISM - - 0.8 Inverse diode forward voltage VSD VGS=0, IF=IS - 0.84 1.2 V Reverse recovery time trr VR=30V, IF=lS, diF/dt=100A/µs - 11.5 17.5 ns Reverse recovery charge Qrr - 2.6 4 nC

Rev. 2.0 BSS7728N

1 Power dissipation

Ptot = f (TA) 0 20 40 60 80 100 120 °C 160 TA 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 W

0.38 BSS7728N

2 Drain current

ID = f (TA) parameter: VGS≥ 10 V 0 20 40 60 80 100 120 °C 160 TA 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 A 0.22 BSS7728N ID

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TA = 25 °C 10 0 10 1 10 2 V VDS -3 10 -2 10 -1 10 0 10 1 10 A BSS7728N ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs tp = 33.0µs

4 Transient thermal impedance

ZthJA = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -2 10 -1 10 0 10 1 10 2 10 3 10 K/W BSS7728N ZthJA single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Rev. 2.0 BSS7728N 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 °C, VGS 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS 0.1 0.2 0.3 0.4 0.5 0.6 A 0.8 ID 10V 4.5V 4.1V 3.7V 3.5V 3.1V 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 °C, VGS ID Ω RDS(on) 3.1V 3.5V 3.7V 4.1V 4.5V 10V 7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: Tj = 25 °C 0 1 2 3 4 V 6 VGS 0.1 0.2 0.3 0.4 0.5 0.6 A 0.8 ID 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 °C ID 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 S 0.4 gfs

Rev. 2.0 BSS7728N

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 0.5 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj Ω BSS7728N RDS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS; ID =26µA -60 -20 20 60 100 °C 160 Tj 0.8 1.3 1.8 V 2.8 Vgs(th) 98% typ. 11 Typ. capacitances C = f (VDS) parameter: VGS=0, f=1 MHz, Tj = 25 °C 0 4 8 12 16 20 24 28 V 36 VDS 0 10 1 10 2 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj VSD -3 10 -2 10 -1 10 0 10 A BSS7728N IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Rev. 2.0 BSS7728N 13 Typ. gate charge VGS = f (QG); parameter: VDS , ID = 0.5 A pulsed, Tj = 25 °C QG V

16 BSS7728N

VGS 0.2 VDS max

0.5 VDS max

0.8 VDS max

14 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj V BSS7728N V(BR)DSS

Rev. 2.0 BSS7728N Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.