BSS76 NJSEMI | Alldatasheet
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Technical content
, O ne, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BSS76 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) r (0.209)' 4.95 (0.195) 4.52 (0.178) 0.48 (0.019L 0.41 (0.016) dia. HIGH VOLTAGE PNP SILICON TRANSISTOR
FEATURES
- Hermetic Metal Package
- Screening Options Available 2.54(0.100) / \\ A 6 S \\ 1 \\ O n / TO-18 (TO-206AA) PACKAGE PIN 1-Emitter PIN 2-Base PIN 3-Collector ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise stated) VCBO VCEO VEBO Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Total Device Dissipation Total Device Dissipation TA = 25°C Derate above 25°C Tc = 25°C Derate above 25°C Operating Junction & Storage Temperature Range Thermal Resistance, Junction - Case TJ. TSTG ROJC Quality Semi-Conductors -300V -300V -5V -0.5A 0.5W 2.86mW/°C 2.5W 14.3mW/°C -65 to 200°C 70°C/W
ELECTRICAL CHARACTERISTICS (TA - 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS V(BR)CEO Collector - Emitter Breakdown Voltage V(BR)CBO Collector - Base Breakdown Voltage V(BR)EBO Emitter - Base Breakdown Voltage 'CBO Collector Cut-off Current ICEO Collector Cut-off Current IEBO Emitter Cut-off Current lc = -10mA IB = 0 lc = -100uA IE = 0 !E=100^iA lc = 0 VCB = -250V IE = 0 VCE = -300V IB = 0 VBE = -5V lc = 0 -300 -300 -50 -500 -50 V nA ON CHARACTERISTICS hpF DC Current Gain PC vCE(sat) Collector - Emitter Saturation Voltage VBE(sat) Base ~ Emitter Saturation Voltage VCE = -1V lc = -1mA VCE = -10V lc = -10mA \\-fi- \\** VCE = -10V lc = -30mA VCE = -10V lc- -100mA lc = -10mA IB = -1mA lc = -30mA IB = -3mA lc = -10mA IB = -1mA O D lc = -30mA IB = -3mA 30 45 35 50 35 55 150 -0.15 -0.3 -0.25 -0.4 -0.8 -0.9 V V DYNAMIC CHARACTERISTICS fT Current Gain Bandwidth Product Cob Output Capacitance Cib Input Capacitance tnn Turn-On Time on U Turn-Off Time lr = -20mA VrF = -20V ^ v_*c f= 20MHz IE = o VCB = -20V C OD f- 1MHz I = 0 VEB = -0.5V \\j C.O f = 1MHz lB1=-10mA lc = -50mA D 1 \\^ VCC = -100V lB2 = -10mA lr = -50mA O£. O VCC = -100V 50 110 200 3.5 100 400 MHz PF ns Pulse Test: tp < 300us , d < 2%.