BSS74 NJSEMI | Alldatasheet
Document overview
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Technical content
, LJ nc, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BSS74 MECHANICAL DATA Dimensions in mm (inches) -5.84(0.230), 4.95(0.195) 4.52(0.178) 0.48 (0.019) 0.41 (0.016) dia. 01 T- 0,0, HIGH VOLTAGE PNP SILICON TRANSISTOR
FEATURES
- Hermetic Metal Package
- Screening Options Available 2.54(0.100) Nonr ' TO-18 (TO-206AA) PACKAGE PIN 1 - Emitter PIN 2-Base PIN 3 - Collector ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise stated) VCBO VCEO VEBO Ic PD PD TJ ' TSTG ReJC Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Total Device Dissipation TA = 25°C Derate above 25qC Total Device Dissipation Tc = 25°C Derate above 25°C Operating Junction & Storage Temperature Range Thermal Resistance, Junction - Case -200V -200V -5V -0.5A 0.5W 2.86mW/°C 2.5W 14.3mW/°C -65 to 200°C 70°C/W Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS V(BR)CEO Collector - Emitter Breakdown Voltage \\/(BR)CBO Collector - Base Breakdown Voltage V(BR)EBO Emitter - Base Breakdown Voltage ICBO Collector Cut-off Current ICEO Collector Cut-off Current IEBO Emitter Cut-off Current lc = -10mA IB = 0 lc = -100nA IE = 0 lE = 100u.A lc = 0 VCB = -150V IE = 0 VCE = -150V IB = 0 VBE = -5V |c = 0 -200 -200 -50 -500 -50 V nA ON CHARACTERISTICS hFF DC Current Gain r L vCE(sat) Collector - Emitter Saturation Voltage ^BE(sat) Base - Emitter Saturation Voltage VCE = -1V lc = -0.1mA VCE = -10V lc = -1mA VCE = -10V lc = -10mA VCE = -10V lc = -30mA V_f C \\*r lc = -10mA !B = -1mA lc = -30mA IB = -3mA lc = -10mA ID = -1mA O D lc = -30mA IB = -3mA 20 40 30 45 35 50 35 55 150 -0.3 -0.4 -0.8 -0.9 V V DYNAMIC CHARACTERISTICS fT Current Gain Bandwidth Product Cob Output Capacitance Cib Input Capacitance ton Turn-On Time !.,« Turn-Off Time UN lc = -20mA VCE = -20V f= 20MHz IE = 0 VCB = -20V C \\sO f = 1MHz u = o VFR = -0.5V O v CD f = 1MHz IB1 = -10mA lc = -50mA V - 100V cc no — -10mA In — -50mA OZ ^ VCC = -100V 50 110 200 3.5 100 400 MHz pF ns Pulse Test: tD < SOO^s , d < 2%.