BSS670S2L

BSS670S2L INFINEON | Alldatasheet

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Technical content

OptiMOSâ Buck converter series Product Summary VDS 55 V RDS(on) 650 mΩ ID 0.54 A Feature

• N-Channel
• Enhancement mode
• Logic Level SOT 23 Gate pin1 Drain pin 3 Source pin 2 Marking BSs Type Package Ordering Code BSS670S2L SOT 23 Q67042-S4052 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID 0.54 0.43 A Pulsed drain current TA=25°C ID puls 2.2 Gate source voltage VGS ± 20 V Power dissipation TA=25°C Ptot 0.36 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56

Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point (Pin 3) RthJS - - 290 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA 350 300 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=1mA V(BR)DSS 55 - - V Gate threshold voltage, VGS = VDS ID=2.7µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS=55V, VGS=0, Tj=25°C VDS=55V, VGS=0, Tj=150°C IDSS 0.01 100 µA Gate-source leakage current VGS=20V, VDS=0V IGSS - 1 100 nA Drain-source on-state resistance VGS=4.5V, ID=270mA RDS(on) - 430 825 mΩ Drain-source on-state resistance VGS=10V, ID=270mA RDS(on) - 346 650 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=0.54A 0.6 1.2 - S Input capacitance Ciss VGS=0, VDS=25V, f=1MHz - 56 75 pF Output capacitance Coss - 13 18 Reverse transfer capacitance Crss - 7 10 Turn-on delay time td(on) VDD=30V, VGS=4.5V, ID=0.54A, RG=130Ω - 9 14 ns Rise time tr - 25 37 Turn-off delay time td(off) - 21 31 Fall time tf - 24 32 Gate Charge Characteristics Gate to source charge Qgs VDD=40V, ID=0.54A - 0.19 0.25 nC Gate to drain charge Qgd - 0.57 0.86 Gate charge total Qg VDD=40V, ID=0.54A, VGS=0 to 10V - 1.7 2.26 Gate plateau voltage V(plateau) VDD=40V, ID=0.54A - 3.1 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - 0.38 A Inv. diode direct current, pulsed ISM - - 2.2 Inverse diode forward voltage VSD VGS=0, IF=0.54A - 0.8 1.1 V Reverse recovery time trr VR=30V, IF=lS, diF/dt=100A/µs - 51 64 ns Reverse recovery charge Qrr - 22 28 nC

1 Power dissipation

Ptot = f (TA) 0 20 40 60 80 100 120 °C 160 TA 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 W

0.38 BSS670S2L

2 Drain current

ID = f (TA) parameter: VGS≥ 10 V 0 20 40 60 80 100 120 °C 160 TA 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 A

0.6 BSS670S2L

4 Transient thermal impedance

ZthJS = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 K/W BSS670S2L ZthJS single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TA = 25 °C 10 -1 10 0 10 1 10 2 V VDS -3 10 -2 10 -1 10 0 10 1 10 A BSS670S2L ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs tp = 23.0µs

5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS 0.5 1.5 A ID 3.5V 4.5V 10V 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS ID 100 200 300 400 500 600 700 800 900 1000 1100 1200 mΩ 1500 RDS(on) 3.5V 4.5V 10V 7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGS 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 A 2.2 ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs ID 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 S 2.2 gfs

9 Drain-source on-state resistance

RDS(on) = f (Tj) parameter : ID = 270 mA, VGS = 10 V -60 -20 20 60 100 °C 180 Tj 200 400 600 800 1000 1200 1400 1600 mΩ

1900 BSS670S2L

RDS(on) typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -60 -20 20 60 100 °C 180 Tj 0.5 1.5 V 2.5 VGS(th) 2 µA 10 µA 11 Typ. capacitances C = f (VDS) parameter: VGS=0, f=1 MHz 0 5 10 15 20 V 30 VDS 0 10 1 10 2 10 3 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD -2 10 -1 10 0 10 1 10 A BSS670S2L IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

13 Typ. gate charge VGS = f (QGate) parameter: ID = 0.54 A pulsed QGate V

16 BSS670S2L

0,8 VDS max DS maxV0,2

14 Drain-source breakdown voltage

V(BR)DSS = f (Tj) parameter: ID=10 mA -60 -20 20 60 100 °C 180 Tj V

66 BSS670S2L

V(BR)DSS

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