BSS64LT1 LRC | Alldatasheet
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LESHAN RADIO COMPANY, LTD. M40–1/2 BSS64LT1 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) Driver Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol V alue Unit Collector–Emitter Voltage V CEO 80 Vdc Collector–Base Voltage V CBO 120 Vdc Emitter–Base Voltage V EBO 5.0 Vdc Collector Current — Continuous I C 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board, (1) PD 225 mWTA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient R θJA 556 °C/W Total Device Dissipation PD 300 mWAlumina Substrate, (2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient R θJA 417 °C/W Junction and Storage Temperature T J , Tstg –55 to +150 °C DEVICE MARKING BSS64LT1 = AM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V (BR)CEO 80 — Vdc (I C = 4.0 mAdc ) Collector–Base Breakdown Voltage V (BR)CBO 120 — Vdc (I C = 100 µAdc ) Emitter–Base Breakdown Voltage V (BR)EBO 5.0 — Vdc (I E = 100 µAdc ) Collector Cutoff Current I CBO nAdc ( V CB = 90 Vdc ) — 0.1 ( T A = 150°C ) — 500 Emitter Cutoff Current I EBO — 200 nAdc ( V EB = 4.0Vdc ) Thermal Clad is a trademark of the Bergquist Company. EMITTER COLLECTOR BASE
LESHAN RADIO COMPANY, LTD. M40–2/2 BSS64LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain hFE 20 — —(I C = 10 mAdc, V CE = 1.0 Vdc) Collector–Emitter Saturation Voltage V CE(sat) Vdc (I C = 4.0mAdc, I B = 0.4 mAdc) — 0.15 (I C = 50mAdc, I B = 15 mAdc) — 0.2 Forward Base–Emitter Voltage V BE(sat) —— — SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product f T 60 — MHz(I C = 4.0 mAdc, V CE = 10 Vdc, f = 20 MHz) Output Capacitance C ob —2 0 p F (V CB = 10 Vdc, f = 1.0 MHz)