BSS64

BCX41 SIEMENS | Alldatasheet

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NPN Silicon AF and Switching Transistor BCX 41 BSS 64 Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BCX 41 BSS 64 Q62702-C1659 Q62702-S535 EKs AMs SOT-23B E C 1 2 3 Parameter Symbol Values Unit Collector-emitter voltage VCE0 80 V Collector-base voltage VCB0 120 Emitter-base voltage VEB0 5 Collector current IC 800 mA Peak collector current ICM 1A Base current IB 100 mA Peak base current IBM 200 Total power dissipation,TS =7 9˚ C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient 2) Rth JA ≤ 285 K/W 125 125 BSS 64 BCX 41 Junction - soldering point Rth JS ≤ 215 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu.

• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary types: BCX 42, BSS 63 (PNP) 5.91

Electrical Characteristics atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. DC characteristics VCollector-emitter breakdown voltage IC = 10 mA BSS 64 BCX 41 V(BR)CE0 125 MHzTransition frequency IC = 20 mA, VCE = 5 V,f = 20 MHz fT – 100 – pFOutput capacitance VCB = 10 V,f = 1 MHz C obo –1 2 – AC characteristics Collector-base breakdown voltage1) IC = 100µA BSS 64 BCX 41 V(BR)CB0 120 125 µACollector cutoff current VCE = 100 V TA = 85 ˚C BCX 41 TA = 125 ˚C BCX 41 ICE0 Emitter-base breakdown voltage IE = 10µA V(BR)EB0 5–– nA nA µA µA Collector cutoff current VCB = 80 V BSS 64 VCB = 100 V BCX 41 VCB = 80 V,TA = 150 ˚C BSS 64 VCB = 100 V,TA = 150 ˚C BCX 41 ICB0 100 100 –DC current gain IC = 100 µA,VCE = 1 V BCX 41 IC = 1 mA, VCE = 1 V BSS 64 IC = 4 mA, VCE = 1 V BSS 64 IC = 10 mA,VCE = 1 V BSS 64 IC = 20 mA,VCE = 1 V BSS 64 IC = 100 mA,VCE = 1 V BCX 41 IC = 200 mA,VCE = 1 V BCX 41 hFE VCollector-emitter saturation voltage IC = 300 mA,IB = 30 mA BCX 41 IC = 4 mA,IB = 0.4 mA BSS 64 IC = 50 mA,IB = 15 mA BSS 64 VCEsat 0.9 0.7 3.0 Base-emitter saturation voltage IC = 300 mA,IB = 30 mA BCX 41 VBEsat – – 1.4 nAEmitter cutoff current VEB = 4 V IEB0 – – 100 1) Pulse test:t≤ 300µs,D = 2 %

Total power dissipationPtot= f(TA*;TS) * Package mounted on epoxy Permissible pulse loadPtot max/Ptot DC =f (tp) Collector currentIC = f(VBE ) VCE = 1 V Transition frequencyfT = f(Ic) VCE = 5 V

Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Collector cutoff currentICB0 = f (TA) VCB = VCE max Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 DC current gainhFE = f (IC ) VCE =1 V