BCX41 INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
BCX41, BSS64
1 Aug-20-2001
NPN Silicon AF and Switching Transistors /G01 For general AF applications /G01 High breakdown voltage /G01 Low collector-emitter saturation voltage /G01 Complementary types: BCX42, BSS63 (PNP) VPS05161 Type Marking Pin Configuration Package BCX41 BSS64 EKs AMs 1 = B 1 = B 2 = E 2 = E 3 = C 3 = C SOT23 SOT23 Maximum Ratings Parameter Symbol BSS64 BCX41 Unit Collector-emitter voltage VCEO 80 125 V Collector-base voltage VCBO 120 125 Emitter-base voltage VEBO 5 5 DC collector current IC 800 mA Peak collector current ICM 1 A Base current mA100IB Peak base current IBM 200 Total power dissipation, TS = 79 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS /G01 215 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance
BCX41, BSS64
2 Aug-20-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BSS64 BCX41 V(BR)CEO 125 V Collector-base breakdown voltage IC = 100 µA, IB = 0 BSS64 BCX41 V(BR)CBO 120 125 Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector cutoff current VCB = 80 V, IE = 0 VCB = 100 V, IE = 0 BSS64 BCX41 ICBO 100 100 nA Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 °C VCB = 100 V, IE = 0 , TA = 150 °C BSS64 BCX41 ICBO µA Emitter cutoff current VEB = 4 V, IC = 0 IEBO - - 100 nA Collector cutoff current VCE = 100 V, TA = 85 °C VCE = 100 V, TA = 125 °C BCX41 BCX41 ICEO µA DC current gain 1) IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 4 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 20 mA, VCE = 1 V IC = 100 mA, VCE = 1 V IC = 200 mA, VCE = 1 V BCX41 BSS64 BSS64 BSS64 BSS64 BCX41 BCX41 hFE 1) Pulse test: t ≤ 300µs, D = 2%
BCX41, BSS64
3 Aug-20-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter saturation voltage1) IC = 300 mA, IB = 30 mA IC = 4 mA, IB = 0.4 mA IC = 50 mA, IB = 15 mA BCX41 BSS64 BSS64 VCEsat 0.9 0.7 V Base-emitter saturation voltage 1) IC = 300 mA, IB = 30 mA BCX41 VBEsat - - 1.4 AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz fT - 100 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 12 - pF
BCX41, BSS64
4 Aug-20-2001
Collector current IC = f (VBE) VCE = 1V 10 0 BCX 41/BSS 64 EHP00421 VBE mA V2 3 150 -50 TA = CΙ Total power dissipation Ptot = f(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 120 150 180 210 240 270 300 mW 360 Ptot Transition frequency fT = f (IC) VCE = 5V 10 10 10 10 BCX 41/BSS 64 EHP00423 f mA MHz 01 23 5 T 310 102 110 CΙ Permissible pulse load Ptotmax / PtotDC = f (tp) EHP00422BCX 41/BSS 64 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 tp =D T tp T totmax totP DC P pt
BCX41, BSS64
5 Aug-20-2001
Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 10 03 BCX 41/BSS 64 EHP00424 VBE sat mA V12 150 -50 CΙ Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 0 400 800 BCX 41/BSS 64 EHP00425 VCE sat mV mA 103 010 10110 10210 10 200 600 150 -50 CΙ Collector cutoff current ICBO = f (TA) VCB = 80V 10 0 50 100 150 BCX 41/BSS 64 EHP00426 TA nA ΙCB0 max typ DC current gain hFE = f (IC) VCE = 1V 10 10 10 10 BCX 41/BSS 64 EHP00427 h mA-1 0 2 3 FE 310 102 110 110 150 -50 555 CΙ