BSS63LT1 LRC | Alldatasheet
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M39–1/2 LESHAN RADIO COMPANY, LTD. High Voltage Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector– Emitter Voltage V CEO –100 Vdc Collector– Emitter Voltage (R BE = 10 kΩ )V CER –110 Vdc Collector Current — Continuous I C –100 mAdc DEVICE MARKING BSS63LT1 = T1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board, (1) P D 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient R θJA 556 °C/W Total Device Dissipation P D 300 mW Alumina Substrate, (2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient R θJA 417 °C/W Junction and Storage Temperature T J , T stg –55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage V (BR)CEO – 100 — — Vdc (IC = –100 µA) Collector–Emitter Breakdown Voltage V (BR)CER – 110 — — Vdc (IC = –10 µAdc , I E =0, R BE =10 kΩ ) Collector–Base Breakdown Voltage V (BR)CBO – 110 — — Vdc (IE = – 10 µAdc, I E =0 ) Emitter –Base Breakdown Voltage V (BR)CBO – 6.0 — — Vdc (IE = – 10 µA) Collector Cutoff Current I CBO — — – 100 µAdc (VCB = – 90 Vdc, I E =0 ) Collector Cutoff Current I CER — — – 10 µAdc (VCB = – 110 Vdc, R BE =10 kΩ ) Emitter Cutoff Current I EBO — — – 200 µAdc (VEB = – 6.0 Vdc, I C = 0 ) Thermal Clad is a trademark of the Bergquist Company. BSS63LT1 CASE 318–08, STYLE 6 SOT– 23 (TO–236AB) EMITTER COLLECTOR BASE
M39–2/2 LESHAN RADIO COMPANY, LTD. BSS63LT ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain h FE –– (I C = –10 mAdc, V CE = –1.0 Vdc) 30 –– –– (I C = –25 mAdc, V CE = –1.0 Vdc) 30 –– –– Collector–Emitter Saturation Voltage V CE(sat) mVdc (I C = –25 mAdc, I B = –2.5 mAdc) — — –250 Base–Emitter Saturation Voltage V BE(sat) mVdc (I C = –25 mAdc, I B = –2.5 mAdc) — — –900 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product f T MHz (I C = –25 mAdc, V CE = –5.0 Vdc, f = 20 MHz) 50 95 — Case Capacitance C C pF (I E = I C = 0, V CB = –10 Vdc, f = 1.0 MHz) — — 20