BCX42 SIEMENS | Alldatasheet

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Technical content

PNP Silicon AF and Switching Transistors BCX 42 BSS 63 Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BCX 42 BSS 63 Q62702-C1485 Q62702-S534 DKs BMs SOT-23B E C 1 2 3 Parameter Symbol Values Unit Collector-emitter voltage VCE0 100 V Collector-base voltage VCB0 110 Emitter-base voltage VEB0 5 Collector current IC 800 mA Peak collector current ICM 1A Base current IB 100 mA Peak base current IBM 200 Total power dissipation,TS =7 9˚ C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient 2) Rth JA ≤ 285 K/W 125 125 BSS 63 BCX 42 Junction - soldering point Rth JS ≤ 215 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu.

  • For general AF applications
  • High breakdown voltage
  • Low collector-emitter saturation voltage
  • Complementary types: BCX 41, BSS 64 (NPN) 5.91

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. DC characteristics VCollector-emitter breakdown voltage IC = 10 mA BCX 42 BSS 63 V(BR)CE0 125 100 MHzTransition frequency IC = 20 mA, VCE = 5 V,f = 20 MHz fT – 150 – pFOutput capacitance VCB = 10 V,f = 1 MHz C obo –1 2 – AC characteristics Collector-base breakdown voltage1) IC = 100µA BCX 42 BSS 63 V(BR)CB0 125 110 µACollector cutoff current VCE = 100 V TA = 85 ˚C BCX 42 TA = 125 ˚C BCX 42 ICE0 Emitter-base breakdown voltage,IE = 10µA V(BR)EB0 5–– nA nA µA µA Collector cutoff current VCB = 80 V BSS 63 VCB = 100 V BCX 42 VCB =8 0V ,TA = 150 ˚C BSS 63 VCB = 100 V,TA = 150 ˚C BCX 42 ICB0 100 100 nAEmitter cutoff current,V EB = 4 V IEB0 – – 100 –DC current gain1) IC = 100µA, VCE = 1 V BCX 42 IC = 10 mA, VCE = 5 V BSS 63 IC = 20 mA, VCE = 5 V BSS 63 IC = 100 mA,VCE = 1 V BCX 42 IC = 200 mA,VCE = 1 V BCX 42 hFE VCollector-emitter saturation voltage IC = 300 mA,IB = 30 mA BCX 42 IC = 25 mA,IB = 2.5 mA BSS 63 IC = 75 mA,IB = 7.5 mA BSS 63 VCEsat 0.9 0.25 0.9 Base-emitter saturation voltage1) IC = 300 mA,IB = 30 mA BCX 42 VBEsat – – 1.4 1) Pulse test:t≤ 300µs,D = 2 %

Total power dissipationPtot= f(TA*;TS) * Package mounted on epoxy Permissible pulse loadPtot max/Ptot DC =f (tp) Collector currentIC = f(VBE ) VCE = 1 V Transition frequencyfT = f(IC ) VCE = 5 V

Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Collector cutoff currentICB0 = f (TA) VCB = VCEmax Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 DC current gainhFE = f (IC ) VCE =1 V