BCX42 INFINEON | Alldatasheet
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Technical content
BCX42, BSS63
1 Jul-10-2001
PNP Silicon AF an Swiching Transistors /G01 For general AF applications /G01 High breakdown voltage /G01 Low collector-emitter saturation voltage /G01 Complementary types: BCX41, BSS64 (NPN) VPS05161 Type Marking Pin Configuration Package BCX42 BSS63 DKs BMs 1 = B 1 = B 2 = E 2 = E 3 = C 3 = C SOT23 SOT23 Maximum Ratings Parameter Symbol BSS63 BCX42 Unit Collector-emitter voltage VCEO 100 125 V Collector-base voltage VCBO 110 125 Emitter-base voltage VEBO 5 5 DC collector current IC 800 mA APeak collector current 1ICM Base current IB 100 mA Peak base current IBM 200 Total power dissipation, TS = 79 °C mW330Ptot Tj °CJunction temperature 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS /G01 215 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance
BCX42, BSS63
2 Jul-10-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BSS63 BCX42 V(BR)CEO 100 125 V Collector-base breakdown voltage IC = 100 µA, IB = 0 BSS63 BCX42 V(BR)CBO 110 125 Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector cutoff current VCB = 80 V, IE = 0 VCB = 100 V, IE = 0 BSS63 BCX42 ICBO 100 100 nA Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 °C VCB = 100 V, IE = 0 , TA = 150 °C BSS63 BCX42 ICBO µA Emitter cutoff current VEB = 4 V, IC = 0 IEBO - - 100 nA Collector cutoff current VCE = 100 V, TA = 85 °C VCE = 100 V, TA = 125 °C BCX42 BCX42 ICEO µA DC current gain 1) IC = 100 µA, VCE = 1 V IC = 10 mA, VCE = 5 V IC = 20 mA, VCE = 5 V IC = 100 mA, VCE = 1 V IC = 200 mA, VCE = 1 V BCX42 BSS63 BSS63 BCX42 BCX42 hFE 1) Pulse test: t ≤ 300µs, D = 2%
BCX42, BSS63
3 Jul-10-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter saturation voltage1) IC = 300 mA, IB = 30 mA IC = 25 mA, IB = 2.5 mA IC = 75 mA, IB = 7.5 mA BCX42 BSS63 BSS63 VCEsat 0.9 0.25 0.9 V Base-emitter saturation voltage 1) IC = 300 mA, IB = 30 mA BCX42 VBEsat - - 1.4 AC Characteristics MHz-- 150fTTransition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz pFCollector-base capacitance VCB = 10 V, f = 1 MHz - 12Ccb -
BCX42, BSS63
4 Jul-10-2001
Collector current IC = f (VBE) VCE = 1V 10 0 1 3 BCX 42/BSS 63 EHP00429 VBE mA V 150 -50 TA = CΙ Total power dissipation Ptot = f(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 120 150 180 210 240 270 300 mW 360 Ptot Permissible pulse load Ptotmax / PtotDC = f (tp) EHP00430BCX 42/BSS 63 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 tp =D T tp T totmax totP DC P pt Transition frequency fT = f (IC) VCE = 5V 10 10 10 10 BCX 42/BSS 63 EHP00431 f mA MHz 01 23 5 T 310 102 110 CΙ
BCX42, BSS63
5 Jul-10-2001
Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 0 400 800 BCX 42/BSS 63 EHP00433 VCE sat mV mA 103 010 10110 10210 10 200 600 150 -50 CΙ ˚C Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 10 0 1 3 BCX 42/BSS 63 EHP00432 VBE sat mA V 150 -50 CΙ Collector cutoff current ICBO = f (TA) VCB = 100V 10 0 50 100 150 BCX 42/BSS 63 EHP00434 TA nA ΙCB0 max typ DC current gain hFE = f (IC) VCE = 1V 10 10 10 10 BCX 42/BSS 63 EHP00435 h mA-1 0 2 3 FE 310 102 110 110 150 -50 555 CΙ