BSS50 NJSEMI | Alldatasheet

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Technical content

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20 STERN AVE,

SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE; (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN Darlington transistors BSS50; BSS51; BSS52

FEATURES

  • High current (max. 1 A)
  • Low voltage (max. 80 V)
  • Integrated diode and resistor.

APPLICATIONS

  • Industrial high gain amplification.

DESCRIPTION

NPN Darlington transistor in a TO-39 metal package. PNP complements: BSS61 and BSS62. PINNING PIN collector, connected to case Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCES Ic Plot hFE fj PARAMETER collector-base voltage BSS50 BSS51 BSS52 collector-emitter voltage BSS50 BSS51 BSS52 collector current total power dissipation DC current gain transition frequency CONDITIONS open emitter VBE = 0 Tamb < 25 °C Tcase < 25 °C lc = 500mA;VCE = 10V lc = 500 mA; VCE = 5 V; f = 100 MHz MIN. 2000 TYP. 200 MAX. 0.8 UNIT V V V V V V A W W MHz N.I .Semi-C'nnduclors reserves the right In change test conditions, parameter limits ;ind package dimensions without notice lut'ormiition liinwhed by NJ Scmi-l unduclort i$ believed to he both accurate and reliable M the lime of guing to press. Ho-vevcr \\ Scini-l onJutlors .bsmiics no re<.ptmsibility Cor my errors or oinissiiins discovered in its use NJ Seini-Loiidiivlurs tn

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NPN Darlington transistors BSS50;BSS51;BSS52 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO Ic ICM IB Plot Tstg Tj Tannb PARAMETER collector-base voltage BSS50 BSS51 BSS52 collector-emitter voltage BSS50 BSS51 BSS52 emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter VBE = 0 open collector Tamb<25°C Tcase < 25 °C MIN. -65 -65 MAX. 100 0.8 +150 200 +150 UNIT V V V V V V V A A mA W W THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 220 UNIT K/W K/W

NPN Darlington transistors BSS50; BSS51; BSS52 CHARACTERISTICS TJ = 25 °C unless otherwise specified. SYMBOL ICES IEBO hFE VcEsat VcEsat VcEsat VfiEsat VBEsat VBEon fr PARAMETER collector cut-off current BSS50 BSS51 BSS52 emitter cut-off current DC current gain collector-emitter saturation voltage collector-emitter saturation voltage BSS51 collector-emitter saturation voltage BSS50; BSS52 base-emitter saturation voltage base-emitter saturation voltage BSS51 BSS50; BSS52 base-emitter on-state voltage transition frequency CONDITIONS VBE = 0; VCE = 45 V VBE = 0; VCE = 60 V VBE = 0; VCE = 80 V lc = 0; VEB = 4 V VCE = 10V lc= 150mA lc = 500 mA lc = 500 mA; IB = 0.5 mA lc = 500 mA; IB = 0.5 mA; TJ = 200 °C lc = 1 A; IB = 1 mA lc = 1 A; IB = 1 mA; TJ = 200 °C lc = 1 A; IB = 4 mA lc = 1 A; IB = 4 mA; TJ = 200 °C lc = 500 rnA; IB = 0.5 mA lc = 1 A; IB = 1 mA lc = 1 A; IB = 4 mA lc = 150mA; VCE = 10V lc = 500mA; VCE = 10V lc = 500 mA; VCE = 5 V; f = 100 MHz Switching times (between 10% and 90% levels) ton toff turn-on time turn-off time Icon = 500 mA; lBon = 0.5 mA; lBoff = -0.5 mA Icon = 1 A; lBon = 1 mA; lBoff = -1 mA lCon = 500 mA; lBon = 0.5 mA; lBoff = -0.5 mA lCon = 1 A; lBon = 1 mA; !Boff = -1 mA MIN. 1000 2000 1.3 1.4 TYP. 200 MAX. 1.3 1.3 1.6 2.3 1.6 1.6 1.9 2.2 2.2 1.65 1.75 UNIT nA nA nA nA V V V V V V V V V V V MHz 0.5 0.4 1.3 1.5 US us us us

  • seating plane 10mm I DIMENSIONS (mm are the original dimensions) UNIT mm A 6.60 6.35 a 5.08 b 0.48 0.41 D 9.39 9.08 8.33 8.18 j 0.85 0.75 k 0.95 0.75 L 14.2 12.7 w 0.2 a 45° OUTLINE VERSION SOT5/1 1 REFERENCES IEC JEDEC TO-39 EIAJ