BSS44 NJSEMI | Alldatasheet
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Technical content
<^E.mi-Cond\\j.ctoi ^Pioducti, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 PNP SILICON PLANAR TRANSISTOR BSS44 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
TC<25°C Ta<25°C Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VEBO Ic PD Tj. Tstg VALUE 0.87 - 65 to +200 UNIT V V V A W W THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rfh (j-c) Rth (j-a) 200 °C/W °C/W ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise ) Collector Base Breakdown Voltage Collector Emitter Sustaining Voltage Emitter Base Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain Transition Frequency Collector-base Capacitance SYMBOL 'CES VcBO(BR) VcEO(SUS) VEBO *VCE <sat> *VBE (sat) ,*hFE fr CCBO TEST CONDITION VCB=60V, VBE=0 |c=1mA, IE=0 lc=50mA, IB=0 !E=100uA, lc=0 IC=0.5A, lB=50mA IC=5A, IB=0.5A IC=0.5A, !B=50mA IC=5A, IB=0.5A IC=0.5A, VCE=2V IC=2A, VCE=2V |C=5A, VCE=2V IC=0.5A, VCE=5V IE=0, VCB=10V, f=1MHz MIN TYP 0.1 0.4 0.8 1.1 MAX 0.5 1.6 100 UNIT uA V V V V V MHz pF *Pulse Test: Pulse Width = 300ns, Duty Cycle < 1.5% N.I Senii-Coiiduetors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed lo be boih accurate and reliable at the time of goin-; IK press. I loue\\er, N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-C'onduclors eiicuurasies customers to \\erify that datasheets are current before placing orders. Qualify Semi-Conducfors
- — A — •• o i JD g DIM A B C D E F G H J K L MIN 8.50 7.74 6.09 0.40 2.41 4.82 0,71 0.73 12.70
42 DEC
9.39 8.50 6.60 0.53 0.88 2.66 5.33 0,86 1.02 48DEG D V PIN CONFIGURATION 1. EMITTER 2. BASE 3. COLLECTOR