BSS340NW INFINEON | Alldatasheet

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Technical content

Features

  • N-channel
  • Enhancementmode
  • Logiclevel(4.5Vrated)
  • Avalancherated
  • QualifiedaccordingtoAECQ101
  • 100%lead-free;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max,VGS=4.5V 600 mΩ RDS(on),max,VGS=10V 400 mΩ ID 0.88 A Type/OrderingCode Package Marking RelatedLinks BSS340NW PG-SOT323 XGs -

OptiMOSª2Small-Signal-Transistor,30V BSS340NW Rev.2.0,2016-06-23Final Data Sheet TableofContents

OptiMOSª2Small-Signal-Transistor,30V BSS340NW Rev.2.0,2016-06-23Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID 0.88

0.71 A TA=25°C

TA=70°C Pulsed drain current ID,pulse - - 3.5 A TA=25°C Avalanche energy, single pulse EAS - - 1.6 mJ ID=0.88A,RGS=16Ω Reversediodedv/dt dv/dt - - 6 kV/µs ID=0.88A,VDS=16V,di/dt=200A/µs, Tj,max=150°C Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 0.5 W TA=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 ESD Class - - - 0 - JESD22-A114 -HBM, ESD Class 0 = < 250V Soldering Temperature - - - 260 °C - 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - ambient, minimal footprint1) RthJA - - 250 K/W - 3Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 30 - - V VGS=0V,ID=250µA Gate threshold voltage VGS(th) 1.2 1.6 2.0 V VDS=VGS,ID=1.6µA Drain-source leakage current IDSS 0.01

5 A VDS=30V,VGS=0V,Tj=25°C

VDS=30V,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 10 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 447 286 600 400 mΩ VGS=4.5V,ID=0.29A VGS=10V,ID=0.88A Transconductance gfs - 1.2 - S |VDS|>2|ID|RDS(on)max,ID=0.71A 1) Performed on 40 mm x 40 mm FR4 PCB. The traces are 1mm wide, 70m thick and 20mm long; they are present on both sides of the PCB

OptiMOSª2Small-Signal-Transistor,30V BSS340NW Rev.2.0,2016-06-23Final Data Sheet Table5Dynamiccharacteristics1) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 31 41 pF VGS=0V,VDS=15V,f=1MHz Output capacitance Coss - 12 16 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 2.4 3.6 pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 2.6 - ns VDD=15V,VGS=10V,ID=0.88A, RG,ext=6Ω Rise time tr - 6.3 - ns VDD=15V,VGS=10V,ID=0.88A, RG,ext=6Ω Turn-off delay time td(off) - 4.6 - ns VDD=15V,VGS=10V,ID=0.88A, RG,ext=6Ω Fall time tf - 2.5 - ns VDD=15V,VGS=10V,ID=0.88A, RG,ext=6Ω Table6Gatechargecharacteristics1) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 0.11 0.15 nC VDD=15V,ID=0.88A,VGS=0to10V Gate to drain charge Qgd - 0.08 0.1 nC VDD=15V,ID=0.88A,VGS=0to10V Gate charge total Qg - 0.46 0.7 nC VDD=15V,ID=0.88A,VGS=0to10V Gate plateau voltage Vplateau - 3.6 - V VDD=15V,ID=0.88A,VGS=0to10V Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continous forward current IS - - 0.4 A TA=25°C Diode pulse current IS,pulse - - 3.5 A TA=25°C Diode forward voltage VSD - 0.9 1.1 V VGS=0V,IF=0.88A,Tj=25°C Reverse recovery time1) trr - 7.8 - ns VR=15V,IF=0.88A,diF/dt=100A/µs Reverse recovery charge1) Qrr - 1.9 - nC VR=15V,IF=0.88A,diF/dt=100A/µs 1) Defined by design. Not subjected to production test.

OptiMOSª2Small-Signal-Transistor,30V BSS340NW Rev.2.0,2016-06-23Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TA[°C] Ptot[W] 120 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Ptot=f(TA) Diagram2:Draincurrent TA[°C] ID[A] 120 160 0.0 0.2 0.4 0.6 0.8 1.0 ID=f(TA);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 10-3 10-2 10-1 100 101 1µs 100 µs 1 ms 10 ms DC ID=f(VDS);TA=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJA[K/W] 10-5 10-4 10-3 10-2 10-1 100 101 102 100 101 102 103 0.5 0.2 0.1 0.05 0.01 single pulse ZthJA=f(tp);parameter:D=tp/T

OptiMOSª2Small-Signal-Transistor,30V BSS340NW Rev.2.0,2016-06-23Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 6 V 10 V 4.5 V 5 V 3.5V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 100 200 300 400 500 600 700 800 900 1000 1100 1200 3.5V 4 V 4.5 V 5 V 6 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 0.0 0.4 0.8 1.2 1.6 2.0 150 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 gfs=f(ID);Tj=25°C

OptiMOSª2Small-Signal-Transistor,30V BSS340NW Rev.2.0,2016-06-23Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 100 200 300 400 500 600 700 800 900 1000 max typ RDS(on)=f(Tj);ID=0.88A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 0.0 0.4 0.8 1.2 1.6 2.0 2.4 min typ max VGS(th)=f(Tj);VDS=VGS;ID=1.6µA;parameter:ID Diagram11:Typ.capacitances VDS[V] C[pF] 100 101 102 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz;Tj=25°C Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.4 0.8 1.2 1.6 10-3 10-2 10-1 100 101 25 °C 150 °C 25 °C, max 150 °C, max IF=f(VSD);parameter:Tj

OptiMOSª2Small-Signal-Transistor,30V BSS340NW Rev.2.0,2016-06-23Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 104 10-2 10-1 100 101 25 °C 100 °C 125 °C IAS=f(tAV);RGS=16Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 0.0 0.1 0.2 0.3 0.4 0.5 6 V 24 V 15 V VGS=f(Qgate);ID=0.88Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 VBR(DSS)=f(Tj);ID=250µA Gate charge waveforms

OptiMOSª2Small-Signal-Transistor,30V BSS340NW Rev.2.0,2016-06-23Final Data Sheet 5PackageOutlines Figure1OutlinePG-SOT323,dimensionsinmm

OptiMOSª2Small-Signal-Transistor,30V BSS340NW Rev.2.0,2016-06-23Final Data Sheet RevisionHistory BSS340NW Revision:2016-06-23,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-06-23 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.