BSS308PE

BSS308PE INFINEON | Alldatasheet

Document overview

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• PDF pages: 9

Technical content

Features

• P-channel
• Enhancement mode
• Logic level (4.5V rated)
• ESD protected
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C -2.0 A T A=70 °C -1.6 Pulsed drain current I D,pulse T A=25 °C -8.0 Avalanche energy, single pulse E AS I D=-2 A, R GS=25 Ω -10.7 mJ Reverse diode dv /dt dv /dt I D=-2 A, V DS=-16V, di /dt =-200A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±20 V Power dissipation1) P tot T A=25 °C W Operating and storage temperature T j, T stg -55 ... 150 °C ESD Class JESD22-A114 -HBM 2 (2kV to 4kV) Soldering Temperature 260 °C °C IEC climatic category; DIN IEC 68-1 55/150/56 °C Value 0.5 PG-SOT-23 Type Package Tape and Reel Information Marking Lead Free Packing BSS308PE PG-SOT-23 L6327: 3000 pcs/ reel YFs Yes Non dry V DS 30 V R DS(on),max V GS=-10 V 80 mΩ V GS=-4.5 V 130 I D -2.0 A Product Summary Rev 2.02 page 1 2010-03-29

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint1) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0V, I D=-250µA -30 - - V Gate threshold voltage V GS(th) V DS=VGS, I D=-11µA -2.0 -1.5 -1.0 Drain-source leakage current I DSS V DS=-30V, V GS=0 V, T j=25 °C -- - 1 µA V DS=-30V, V GS=0V, Gate-source leakage current I GSS V GS=-20V, V DS=0V -- - 5 µA Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=-1.7 A - 88 130 mΩ V GS=-10 V, I D=-2 A -6 2 8 0 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-1.6 A 4.6 - S Values 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides of the PCB. Rev 2.02 page 2 2010-03-29

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 376 500 pF Output capacitance C oss - 196 261 Reverse transfer capacitance Crss -1 2 1 8 Turn-on delay time t d(on) - 5.6 - ns Rise time t r - 7.7 - Turn-off delay time t d(off) - 15.3 - Fall time t f - 2.8 - Gate Charge Characteristics Gate to source charge Q gs - -1.2 - nC Gate to drain charge Q gd - -0.6 - Gate charge total Q g - -5.0 - Gate plateau voltage V plateau - -3.1 - V Reverse Diode Diode continous forward current I S - - -0.4 A Diode pulse current I S,pulse - - -8.4 Diode forward voltage V SD V GS=0 V, I F=-2 A, Reverse recovery time t rr -1 4- n s Reverse recovery charge Q rr - -5.9 - nC V R=10 V, I F=-2 A, di F/dt =100 A/µs T A=25 °C Values V GS=0 V, V DS=-15 V, f =1 MHz V DD=-15V, V GS=-10 V, I D=-2 A, R G=6 Ω V DD=-15 V, I D=-2 A, V GS=0 to -10 V Rev 2.02 page 3 2010-03-29

1 Power dissipation 2 Drain current

P tot=f(T A) I D=f(T A); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 1 µs10 µs 100 µs 1 ms 10 ms DC 10210110010-1 101 100 10-1 10-2 10-3 10-4 V DS [V] I D [A] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10210110010-110-210-310-410-5 103 102 101 100 10-1 t p [s] Z thJA [K/W] 0.125 0.25 0.375 0.5 0 40 80 120 160 T A [°C] P tot [W] 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 0 20 40 60 80 100 120 140 160 T A [°C] I D [A] Rev 2.02 page 4 2010-03-29

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0123456 I D [A] g fs [S] 2.8 V 3 V 3.3 V 3.5 V 4 V 4.5 V 10 V V DS [V] I D [A] 25 °C 150 °C V GS [V] I D [A] 2.8 V 3 V 3.3 V 3.5 V 4 V 4.5 V 10 V 100 150 200 250 300 350 400 0 0.5 1 1.5 2 2.5 3 3.5 4 I D [A] R DS(on) [mΩ] Rev 2.02 page 5 2010-03-29

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-2 A; V GS=-10 V V GS(th)=f(T j); V DS=VGS; I D=11 µA parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j typ 98 % 100 120 140 -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ] typ 98 % 2 % 0.4 0.8 1.2 1.6 2.4 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] Ciss Coss Crss 100 101 102 103 0 5 10 15 20 V DS [V] C [pF] 25 °C 150 °C 25 °C, 98% 150 °C, 98% 101 100 10-1 10-2 10-3 0 0.4 0.8 1.2 1.6 V SD [V] I F [A] Rev 2.02 page 6 2010-03-29

13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-2 A pulsed parameter: T j(start) parameter: V DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=250 µA -60 -20 20 60 100 140 T j [°C] V BR(DSS) [V] 6 V 15 V 24 V 0123456 Q gate [nC] V GS [V] 25 °C 100 °C 125 °C 103102101100 101 100 10-1 t AV [µs] I AV [A] V GS Q gate V gs(t h ) Q g(th) Q gs Q gd Q sw Q g Rev 2.02 page 7 2010-03-29

Package Outline: Footprint: Packaging: Rev 2.02 page 8 2010-03-29

81726 Munich, Germany

© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.02 page 9 2010-03-29