BSS229 SIEMENS | Alldatasheet

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Technical content

Semiconductor Group 1 04.97 Type Ordering Code Tape and Reel Information Pin Configuration Marking Package 123 BSS 229 Q62702-S600 E6296: 1500 pcs/reel; 2 reels/carton; source first G D S SS229 TO-92 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 250 V Drain-gate voltage,RGS = 20 kΩ VDGR 250 Gate-source voltage VGS ± 14 Gate-source peak voltage, aperiodic Vgs ± 20 Continuous drain current,TA = 25 ˚C ID 0.07 A Pulsed drain current, TA = 25 ˚C ID puls 0.21 Max. power dissipation,TA = 25 ˚C Ptot 0.63 W Operating and storage temperature range Tj,Tstg – 55 … + 150 ˚C Thermal resistance, chip-ambient (without heat sink) RthJA ≤ 200 K/W DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 SIPMOS  Small-Signal Transistor BSS 229 1 2 3

  • VDS 250 V
  • ID 0.07 A
  • RDS(on) 100 Ω
  • N channel
  • Depletion mode
  • High dynamic resistance
  • Available grouped inVGS(th)

Electrical Characteristics

at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS =− 3 V,ID = 0.25 mA V(BR)DSS 250 – – V Gate threshold voltage VDS = 3 V,ID = 1 mA VGS(th) − 1.8 − 1.4 − 0.7 Drain-source cutoff current VDS = 250 V,VGS =− 3 V Tj = 25 ˚C Tj = 125 ˚C IDSS 100 200 nA µA Gate-source leakage current VGS = 20 V,VDS = 0 IGSS – 10 100 nA Drain-source on-resistance VGS = 0 V,ID = 0.014 A RDS(on) – 75 100 Ω Dynamic Characteristics Forward transconductance VDS ≥ 2× ID × RDS(on)max,ID = 0.07 A gfs 0.05 0.10 – S Input capacitance VGS = 0,VDS = 25 V, f= 1 MHz C i iss – 85 120 pF Output capacitance VGS = 0,VDS = 25 V,f = 1 MHz Coss –61 0 Reverse transfer capacitance VGS = 0,VDS = 25 V, f= 1 MHz Crss –23 Turn-on timeton, (ton =td(on) +tr) VDD =3 0V ,VGS =− 2 V ... + 5 V,RGS =5 0Ω , ID = 0.15 A td(on) –46n s tr –1 0 1 5 Turn-off timetoff, (toff= td(off) +tf) VDD =3 0V ,VGS =− 2 V ... + 5 V,RGS =5 0Ω , ID = 0.15 A td(off) –1 0 1 3 tf –1 5 2 0 BSS 229

1) A specific group cannot be ordered separately. Each reel only contains transistors from one group. Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous reverse drain current TA = 25 ˚C IS – – 0.07 A Pulsed reverse drain current TA = 25 ˚C ISM – – 0.21 Diode forward on-voltage IF = 0.14 A,VGS = 0 VSD – 0.8 1.2 V V GS(th) Grouping Symbol Limit Values Unit Test Condition min. max. Range ofVGS(th) ΔVGS(th) – 0.15 V – Threshold voltage selected in groups:1) F G A B C D VGS(th) – 1.535 – 1.635 – 1.735 – 1.835 – 1.935 – 2.035 – 1.385 – 1.485 – 1.585 – 1.685 – 1.785 – 1.885 V V V V V V VDS1 = 0.2 V; VDS2 = 3 V; ID = 10µA BSS 229

atTj = 25 ˚C, unless otherwise specified. Total power dissipationPtot =f (TA) Typ. output characteristicsID =f (VDS ) parameter:tp = 80µs Safe operating areaID =f(VDS ) parameter:D = 0.01,TC = 25 ˚C Typ. drain-source on-resistance RDS(on) =f (ID ) parameter:VGS BSS 229

Typ. transfer characteristicsID =f(VGS ) parameter:tp = 80µs, VDS ≥ 2× ID × RDS(on)max. Drain-source on-resistance RDS(on) =f (Tj) parameter:ID = 0.014 A,VGS = 0 V, (spread) Typ. forward transconductance gfs= f (ID ) parameter:VDS ≥ 2× ID × RDS(on)max.,tp = 80 µs Typ. capacitancesC =f (VDS ) parameter:VGS = 0,f = 1 MHz BSS 229

Gate threshold voltageVGS(th) =f (Tj) parameter:VDS = 3 V,ID = 1 mA, (spread) Drain currentID =f (TA) parameter:VGS ≥ 3 V Forward characteristics of reverse diode IF =f(VSD ) parameter:tp = 80µs,Tj,(spread) Drain-source breakdown voltage V(BR) DSS =b × V(BR)DSS (25 ˚C) BSS 229