BSS223PW

BSS223PW INFINEON | Alldatasheet

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Technical content

Preliminary data BSS 223PW OptiMOS -P Small-Signal-Transistor Product Summary VDS -20 V RDS(on) 1.2 Ω ID -0.39 A Feature

• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated SOT-323 VSO05561 Gate pin1 Drain pin 3 Source pin 2 Marking X4s Type Package Ordering Code BSS 223PW SOT-323 Q67042-S4075 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID -0.39 -0.31 A Pulsed drain current TA=25°C ID puls -1.56 Avalanche energy, single pulse ID=-0.39 A , VDD=-10V, RGS=25Ω EAS 1.4 mJ Reverse diode dv/dt IS=-0.39A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C dv/dt -6 kV/µs Gate source voltage VGS ±12 V Power dissipation TA=25°C Ptot 0.25 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56

Preliminary data BSS 223PW Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point RthJS - - 180 K/W Thermal resistance, junction - ambient, leaded RthJA - - 500 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=-250µA V(BR)DSS -20 - - V Gate threshold voltage, VGS = VDS ID=-1.5µA Zero gate voltage drain current VDS=-20V, VGS=0, Tj=25°C VDS=-20V, VGS=0, Tj=150°C IDSS -0.1 -10 -100 µA Gate-source leakage current VGS=-12V, VDS=0 IGSS - -10 -100 nA Drain-source on-state resistance VGS=-2.5V, ID=-0.29A RDS(on) - 1.27 2.1 Ω Drain-source on-state resistance VGS=-4.5, ID=-0.39A RDS(on) - 0.7 1.2

Preliminary data BSS 223PW Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs /Ge7VDS/Ge7≥2*/Ge7ID/Ge7*RDS(on)max ID=-0.31A 0.35 0.7 - S Input capacitance Ciss VGS=0, VDS=-15V, f=1MHz - 45 56 pF Output capacitance Coss - 21 26 Reverse transfer capacitance Crss - 17 22 Turn-on delay time td(on) VDD=-10V, VGS=-4.5V, ID=-0.39A, RG=6Ω - 3.8 5.7 ns Rise time tr - 5 7.5 Turn-off delay time td(off) - 5.1 7.6 Fall time tf - 3.2 4.8 Gate Charge Characteristics Gate to source charge Qgs VDD=-10V, ID=-0.39A - -0.04 -0.05 nC Gate to drain charge Qgd - -0.4 -0.5 Gate charge total Qg VDD=-10V, ID=-0.39A, VGS=0 to -4.5V - -0.5 -0.62 Gate plateau voltage V(plateau) VDD=-10V, ID=-0.39A - -2.2 -2.7 V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - -0.39 A Inv. diode direct current, pulsed ISM - - -1.56 Inverse diode forward voltage VSD VGS=0, IF=-0.39 - -1 -1.33 V Reverse recovery time trr VR=-10V, |IF| = |lD|, diF/dt=100A/µs - 7.6 9.5 ns Reverse recovery charge Qrr - 1.1 1.4 nC

Preliminary data BSS 223PW

1 Power dissipation

Ptot = f (TA) 0 20 40 60 80 100 120 °C 160 TA 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0.22 0.24 W 0.28 BSS 223PW Ptot

2 Drain current

ID = f (TA) parameter: |VGS|≥ 4.5 V 0 20 40 60 80 100 120 °C 160 TA -0.04 -0.08 -0.12 -0.16 -0.2 -0.24 -0.28 -0.32 -0.36 A -0.42 BSS 223PW ID

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TA = 25 °C -10 -1 -10 0 -10 1 -10 2 V VDS -2 -10 -1 -10 0 -10 1 -10 A BSS 223PW ID R DS(on) = V DS / I D DC 10 ms 1 ms tp = 180.0µs

4 Transient thermal impedance

ZthJA = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 K/W BSS 223PW ZthJA single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Preliminary data BSS 223PW 5 Typ. output characteristic ID = f (VDS) parameter: Tj =25°C 0 0.3 0.6 0.9 V 1.5 -VDS 0.1 0.2 0.3 0.4 0.5 A 0.7 -ID 2.2V 2.5V 4.5V 10V 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS -ID 0.5 1.5 2.5 Ω RDS(on) 2.2V 2.5V 4.5V 10V 7 Typ. transfer characteristics ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max parameter: Tj = 25 °C 0 0.5 1 1.5 2 V 3 -VGS 0.1 0.2 0.3 0.4 0.5 A 0.7 -ID 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 °C -ID 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 S 1.1 gfs

Preliminary data BSS 223PW

9 Drain-source on-resistance

RDS(on) = f(Tj) parameter: ID = -0.39 A, VGS = -4.5 V -60 -20 20 60 100 °C 160 Tj 0.2 0.4 0.6 0.8 1.2 Ω 1.6 RDS(on) typ. 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -60 -20 20 60 100 °C 160 Tj 0.2 0.4 0.6 0.8 1.2 V 1.6 - VGS(th) typ. 98% 11 Typ. capacitances C = f (VDS) parameter: VGS=0, f=1 MHz; Tj = 25 °C 0 2 4 6 8 10 12 V 15 -VDS 1 10 2 10 pF C Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj VSD -2 -10 -1 -10 0 -10 1 -10 A BSS 223PW IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Preliminary data BSS 223PW 13 Typ. avalanche energy EAS = f (Tj), par.: ID = -0.39 A VDD = -10 V, RGS = 25 Ω 20 40 60 80 100 120 °C 160 Tj 0.2 0.4 0.6 0.8 mJ 1.4 EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = -0.39 A pulsed; Tj = 25 °C |QGate| -10 -12 V -16 BSS 223PW VGS 20% 50% 80%

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj -18 -18.5 -19 -19.5 -20 -20.5 -21 -21.5 -22 -22.5 -23 -23.5 V -24.5 BSS 223PW V(BR)DSS

Preliminary data BSS 223PW Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.