BSS209PW

BSS209PW INFINEON | Alldatasheet

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Technical content

Preliminary data BSS 209PW OptiMOS -P Small-Signal-Transistor Product Summary VDS -20 V RDS(on) 550 mΩ ID -0.58 A Feature

• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated SOT-323 VSO05561 Gate pin1 Drain pin 3 Source pin 2 Marking X3s Type Package Ordering Code BSS 209PW SOT-323 Q67042-S4074 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID -0.58 -0.46 A Pulsed drain current TA=25°C ID puls -2.3 Avalanche energy, single pulse ID=-0.58 A , VDD=-10V, RGS=25Ω EAS 3.5 mJ Reverse diode dv/dt IS=-0.58A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C dv/dt -6 kV/µs Gate source voltage VGS ±12 V Power dissipation TA=25°C Ptot 0.52 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56

Preliminary data BSS 209PW Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point RthJS - - 120 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA 240 160 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=-250µA V(BR)DSS -20 - - V Gate threshold voltage, VGS = VDS ID=-3.5µA Zero gate voltage drain current VDS=-20V, VGS=0, Tj=25°C VDS=-20V, VGS=0, Tj=150°C IDSS -0.1 -10 -100 µA Gate-source leakage current VGS=-12V, VDS=0 IGSS - -10 -100 nA Drain-source on-state resistance VGS=-2.5V, ID=-0.46A RDS(on) - 563 900 mΩ Drain-source on-state resistance VGS=-4.5, ID=-0.58A RDS(on) - 369 550 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec.

Preliminary data BSS 209PW Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs /Ge7VDS/Ge7≥2*/Ge7ID/Ge7*RDS(on)max ID=-0.46A 0.87 1.74 - S Input capacitance Ciss VGS=0, VDS=-15V, f=1MHz - 89.9 - pF Output capacitance Coss - 40.1 - Reverse transfer capacitance Crss - 31.5 - Turn-on delay time td(on) VDD=-10V, VGS=-4.5V, ID=-0.58A, RG=6Ω - 4.4 6.6 ns Rise time tr - 5.8 8.7 Turn-off delay time td(off) - 7.6 11.4 Fall time tf - 4.5 6.7 Gate Charge Characteristics Gate to source charge Qgs VDD=-10V, ID=-0.58A - -0.12 -0.17 nC Gate to drain charge Qgd - -0.74 -1.1 Gate charge total Qg VDD=-10V, ID=-0.58A, VGS=0 to -4.5V - -0.92 -1.38 Gate plateau voltage V(plateau) VDD=-10V, ID=-0.58A - -1.7 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - -0.5 A Inverse diode direct current, pulsed ISM - - -2.3 Inverse diode forward voltage VSD VGS=0, |IF| = |ID| - -1.3 -0.88 V Reverse recovery time trr VR=-10V, |IF| = |lD|, diF/dt=100A/µs - 9 11.2 ns Reverse recovery charge Qrr - 1.27 1.59 nC

Preliminary data BSS 209PW

1 Power dissipation

Ptot = f (TA) 0 20 40 60 80 100 120 °C 160 TA 0.1 0.2 0.3 0.4 0.5 0.6 0.7 W 0.85 BSS 209PW Ptot

2 Drain current

ID = f (TA) parameter: |VGS|≥ 4.5 V 0 20 40 60 80 100 120 °C 160 TA -0.05 -0.1 -0.15 -0.2 -0.25 -0.3 -0.35 -0.4 -0.45 -0.5 -0.55 A -0.65 BSS 209PW ID

3 Safe operating area

ID = f ( VDS ) parameter : D = 0 , TA = 25 °C -10 -1 -10 0 -10 1 -10 2 V VDS -2 -10 -1 -10 0 -10 1 -10 A BSS 209PW ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs tp = 82.0µs

4 Transient thermal impedance

ZthJS = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 K/W BSS 209PW ZthJS single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Preliminary data BSS 209PW 5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0 1 2 3 4 5 6 7 8 V 10 - VDS A - ID Vgs = -1.8V Vgs = -2.2V Vgs = -2.5V Vgs = -2V Vgs = -2.8V Vgs = -3.5V Vgs = -3V Vgs = -4V Vgs = -4.5V Vgs = -7V 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS - ID 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Ω RDS(on) Vgs = -2.2V Vgs = -2.5V Vgs = - 3V Vgs= - 3.5V Vgs = - 4V Vgs = - 4.5V Vgs= - 5V Vgs= - 6V Vgs = - 7V 7 Typ. transfer characteristics ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 V 3.5 - VGS 0.5 1.5 2.5 3.5 4.5 A - ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: tp = 80 µs 0 1 2 3 4 A 6 - ID 0.5 1.5 2.5 S gfs

Preliminary data BSS 209PW

9 Drain-source on-resistance

RDS(on) = f(Tj) parameter: ID = -0.58 A, VGS = -4.5 V -60 -20 20 60 100 °C 160 Tj 250 300 350 400 450 500 550 600 mΩ 700 RDS(on) typ. 98%

10 Gate threshold voltage

VGS(th) = f (Tj) parameter: VGS = VDS, ID = -3.5 µA -60 -20 20 60 100 °C 160 Tj 0.2 0.4 0.6 0.8 V 1.4 VGS(th) typ. 98% 11 Typ. capacitances C = f (VDS) parameter: VGS=0, f=1 MHz 0 5 10 V 20 - VDS 1 10 2 10 3 10 pF C Crss Coss Ciss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD -2 -10 -1 -10 0 -10 1 -10 A BSS 209PW IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Preliminary data BSS 209PW 13 Typ. avalanche energy EAS = f (Tj), par.: ID = -0.58 A VDD = -10 V, RGS = 25 Ω 25 50 75 100 °C 150 Tj 0.5 1.5 2.5 mJ EAS 14 Typ. gate charge |VGS| = f (QGate) parameter: ID = -0.58 A pulsed 0 0.5 1 1.5 2 nC 3 |QGate| V - VGS

0.2 Vds max

0.5 Vds max

0.8 Vds max

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj -18 -18.5 -19 -19.5 -20 -20.5 -21 -21.5 -22 -22.5 -23 -23.5 V -24.5 BSS 209PW V(BR)DSS

Preliminary data BSS 209PW Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.