BSS138

BSS138 ZETEX | Alldatasheet

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SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – MARCH 1996 ✪ PARTMARKING DETAIL – SS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 50 V Continuous Drain Current at Tamb=25°C I D 200 mA Pulsed Drain Current I DM 800 mA Gate-Source Voltage V GS ± 20 V Power Dissipation at Tamb=25°C P tot 360 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 50 V I D=0.25mA, VGS=0V Gate-Source Threshold Voltage VGS(th) 0.5 1.5 V I D=1mA, VDS= VGS Gate-Body Leakage I GSS 100 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS 0.5 100 µA µA nA V DS=50V, VGS=0 VDS=50V, VGS=0V, T=125°C(2) VDS=20V, VGS=0 Static Drain-Source On-State Resistance (1) RDS(on) 3.5 Ω VGS=5V,ID=200mA Forward Transconductance(1)(2) gfs 120 mS V DS=25V,ID=200mA Input Capacitance (2) C iss 50 pF VDS=25V, VGS=0V, f=1MHzCommon Source Output Capacitance (2) Coss 25 pF Reverse Transfer Capacitance (2) Crss 8p F Turn-On Delay Time (2)(3) t d(on) 10 ns VDD ≈30V, ID=280mARise Time (2)(3) t r 10 ns Turn-Off Delay Time (2)(3) t d(off) 15 ns Fall Time (2)(3) t f 25 ns (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator BSS138 D G S SOT23 3 - 72

0.8 1.2 1.6 T-T emperature ( °C) Normalised RDS(on)And VGS(th) RDS(on) AT VGS(th) AT 1.0 1.0 0.1 ID-Drain Current (Amperes) RDS(on) - Drain Source On Resistance (Ohms) 0.01 100 ID -Drain Current (Amperes) 100 200 300 400 500 gfs-Forward Transconductance (mS) 100 200 300 400 500 gfs-Forward Transconductance (mS) VGS -Gate Source Voltage (Volts) 1 10 1000.1 100 VDS -Drain Source Voltage (Volts) C-Capacitance (pF) NOTE:-VGS =0V Ciss Coss Crss Typical On Resistance vs. Drain Current 68 1 0 012345 0.2 0.4 0.6 0.8 1.0 VDS -Drain Source Voltage (Volts) IDS-Drain Source Current (A) Saturation Characteristics Typical T ransconductance vs. Drain Current Typical T ransconductance vs. Gate - Source Voltage Typical Capacitance vs. Drain - Source Voltage Normalised RDS(on) And VGS(th) vs. T emperature VGS =10V 5V 4.5V 3.5V 2.5V 3V 3.5V 10V VGS =2.5V VDS =25V 80µs Pulsed Test VDS =25V 80µs Pulsed Test Ciss Coss Crss VGS =5V 0.6 1.0 1.4 1.8 -40 40 80 120 160 80µs Pulsed Test F=1MHz ID=200mA ID=1mA VDS=VGS TYPICAL CHARACTERISTICS Q-Charge (nC) VGS-Gate-Source Voltage (Volts) VDD =20V 012345 0.2 0.4 0.6 0.8 1.0 100µA 1mA 10mA 100mA 1A 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IDS - Drain Source Current VSD- Source Drain Voltage (V) VGS - Gate Source Voltage (V) IDS- Drain Source Current (A) Typical Diode Forward Voltage Typical Transfer CharacteristicsTypical Gate Charge vs. Gate-Source Voltage 30V 50V ID =200mA 80µs Pulsed Test VDS =10V 80µs Pulsed Test VGS =0 TYPICAL CHARACTERISTICS BSS138 BSS138 3 - 73 3 - 74

0.8 1.2 1.6 T-T emperature ( °C) Normalised RDS(on)And VGS(th) RDS(on) AT VGS(th) AT 1.0 1.0 0.1 ID-Drain Current (Amperes) RDS(on) - Drain Source On Resistance (Ohms) 0.01 100 ID -Drain Current (Amperes) 100 200 300 400 500 gfs-Forward Transconductance (mS) 100 200 300 400 500 gfs-Forward Transconductance (mS) VGS -Gate Source Voltage (Volts) 1 10 1000.1 100 VDS -Drain Source Voltage (Volts) C-Capacitance (pF) NOTE:-VGS =0V Ciss Coss Crss Typical On Resistance vs. Drain Current 68 1 0 012345 0.2 0.4 0.6 0.8 1.0 VDS -Drain Source Voltage (Volts) IDS-Drain Source Current (A) Saturation Characteristics Typical T ransconductance vs. Drain Current Typical T ransconductance vs. Gate - Source Voltage Typical Capacitance vs. Drain - Source Voltage Normalised RDS(on) And VGS(th) vs. T emperature VGS =10V 5V 4.5V 3.5V 2.5V 3V 3.5V 10V VGS =2.5V VDS =25V 80µs Pulsed Test VDS =25V 80µs Pulsed Test Ciss Coss Crss VGS =5V 0.6 1.0 1.4 1.8 -40 40 80 120 160 80µs Pulsed Test F=1MHz ID=200mA ID=1mA VDS=VGS TYPICAL CHARACTERISTICS Q-Charge (nC) VGS-Gate-Source Voltage (Volts) VDD =20V 012345 0.2 0.4 0.6 0.8 1.0 100µA 1mA 10mA 100mA 1A 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IDS - Drain Source Current VSD- Source Drain Voltage (V) VGS - Gate Source Voltage (V) IDS- Drain Source Current (A) Typical Diode Forward Voltage Typical Transfer CharacteristicsTypical Gate Charge vs. Gate-Source Voltage 30V 50V ID =200mA 80µs Pulsed Test VDS =10V 80µs Pulsed Test VGS =0 TYPICAL CHARACTERISTICS BSS138 BSS138 3 - 73 3 - 74