BSS131H6327 INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

SIPMOS® Small-Signal-Transistor Feature

  • N-Channel
  • Enhancement mode
  • Logic level
  • dv /dt rated
  • Pb-free lead-plating; RoHS compliant
  • Qualified according to AEC Q101
  • Halogen-free according to IEC61249-2-21 Parameter Symbol Conditions Unit Value VDS 240 V RDS(on),max 14 Ω ID 0.1 A Product Summary PG-SOT-23 Type Package Pb-free Tape and Reel Information Marking BSS131 PG-SOT23 Yes H6327 SRs Rev. 2.6 page 1 2012-03-29 Continuous drain current I D T A=25 °C 0.11 A T A=70 °C 0.09 Pulsed drain current I D,pulse T A=25 °C 0.4 Reverse diode dv /dt dv /dt I D=0.1 A, V DS=192 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±20 V ESD Class JESD22-A114-HBM Class 0 Power dissipation P tot T A=25 °C 0.36 W Operating and storage temperature T j, T stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Rev. 2.6 page 1 2012-03-29

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - minimal footprint R thJA - - 350 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 240 - - V Gate threshold voltage V GS(th) V DS=0 V, I D=56 µA 0.8 1.4 1.8 Drain-source leakage current I D (off) V DS=240 V, V GS=0 V, T j=25 °C - - 0.01 µA V DS=240 V, V GS=0 V, T j=150 °C --5 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 10 nA Values Rev. 2.6 page 2 2012-03-29 Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=0.09 A - 9.07 20 Ω V GS=10 V, I D=0.1 A - 7.7 14 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.08 A 0.06 0.13 - S Rev. 2.6 page 2 2012-03-29

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss -5 8 7 7 p F Output capacitance C oss - 7.3 10 Reverse transfer capacitance Crss - 2.8 4.2 Turn-on delay time t d(on) - 3.3 5.0 ns Rise time t r - 3.1 4.6 Turn-off delay time t d(off) - 13.7 20 Fall time t f - 64.5 97 Gate Charge Characteristics Gate to source charge Q gs - 0.16 0.22 nC Gate to drain charge Q gd - 0.8 1.2 Gate charge total Q g - 2.1 3.1 Gate plateau voltage V plateau - 2.90 - V Values V GS=0 V, V DS=25 V, f =1 MHz V DD=120 V, V GS=10 V, I D=0.1 A, R G=6 Ω V DD=192 V, I D=0.1 A, V GS=0 to 10 V Rev. 2.6 page 3 2012-03-29 Reverse Diode Diode continous forward current I S - - 0.11 A Diode pulse current I S,pulse - - 0.43 Diode forward voltage V SD V GS=0 V, I F=0.1 A, T j=25 °C - 0.81 1.2 V Reverse recovery time t rr - 42.9 64.3 ns Reverse recovery charge Q rr - 22.6 34 nC V R=120 V, I F=0.1 A, di F/dt =100 A/µs T A=25 °C Rev. 2.6 page 3 2012-03-29

1 Power dissipation 2 Drain current

P tot=f(T A) I D=f(T A); V GS≥10 V 0.1 0.2 0.3 0.4 0 40 80 120 160 Ptot [W] TA [°C] 0.02 0.04 0.06 0.08 0.1 0.12 0 40 80 120 160 ID [A] TA [°C] Rev. 2.6 page 4 2012-03-29 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 100 ms 30 µs 100 µs 1 ms 10 ms DC 10-3 10-2 10-1 100 1 10 100 1000 ID [A] VDS [V] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10-5 10-4 10-3 10-2 10-1 100 101 100 101 102 103 ZthJA [K/W] tp [s] 0.1 0.2 0.3 0.4 0 40 80 120 160 Ptot [W] TA [°C] 0.02 0.04 0.06 0.08 0.1 0.12 0 40 80 120 160 ID [A] TA [°C] Rev. 2.6 page 4 2012-03-29

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 2.3 V 2.7 V 3.3 V 3.9 V 4.5 V 5 V 7 V 10 V 0 0.1 0.2 0.3 0.4 RDS(on) [Ω] ID [A] 2.3 V 2.7 V 3.3 V 3.9 V 4.5 V 5 V 7 V 10 V 0.1 0.2 0.3 0.4 01234567 ID [A] VDS [V] Rev. 2.6 page 5 2012-03-29 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 2.3 V 2.7 V 3.3 V 3.9 V 4.5 V 5 V 7 V 10 V 0 0.1 0.2 0.3 0.4 RDS(on) [Ω] ID [A] 0.1 0.2 0.3 0.4 01234 ID [A] VGS [V] 0.05 0.1 0.15 0.2 0.25 0.3 gfs [S] ID [A] 2.3 V 2.7 V 3.3 V 3.9 V 4.5 V 5 V 7 V 10 V 0.1 0.2 0.3 0.4 01234567 ID [A] VDS [V] Rev. 2.6 page 5 2012-03-29

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.1 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=56 µA parameter: I D typ 98 % -60 -20 20 60 100 140 RDS(on) [Ω] Tj [°C] typ 98 % 2 % 0.4 0.8 1.2 1.6 2.4 -60 -20 20 60 100 140 VGS(th) [V] Tj [°C] Rev. 2.6 page 6 2012-03-29 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j typ 98 % -60 -20 20 60 100 140 RDS(on) [Ω] Tj [°C] typ 98 % 2 % 0.4 0.8 1.2 1.6 2.4 -60 -20 20 60 100 140 VGS(th) [V] Tj [°C] Ciss Coss Crss 100 101 102 103 0 1 02 03 0 C [pF] VDS [V] 25 °C150 °C 25 °C, 98% 150 °C, 98% 10-3 10-2 10-1 100 IF [A] VSD [V] Rev. 2.6 page 6 2012-03-29

13 Typ. gate charge 14 Drain-source breakdown voltage V GS=f(Q gate); I D=0.1 A pulsed V BR(DSS)=f(T j); I D=250 µA parameter: V DD 200 210 220 230 240 250 260 270 280 290 300 -60 -20 20 60 100 140 VBR(DSS) [V] Tj [°C] 48 V 120V 192 V 00 . 511 . 522 . 5 VGS [V] Qgate [nC] Rev. 2.6 page 7 2012-03-29 200 210 220 230 240 250 260 270 280 290 300 -60 -20 20 60 100 140 VBR(DSS) [V] Tj [°C] 48 V 120V 192 V 00 . 511 . 522 . 5 VGS [V] Qgate [nC] Rev. 2.6 page 7 2012-03-29

Package Outline: Footprint: Packaging: Rev. 2.6 page 8 2012-03-29 Rev. 2.6 page 8 2012-03-29

81726 Munich, Germany

© 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.6 page 9 2012-03-29 Published by Infineon Technologies AG © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.6 page 9 2012-03-29