BSS131 SIEMENS | Alldatasheet

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Semiconductor Group 1 Sep-13-1996 BSS 131 SIPMOS ® Small-Signal Transistor

  • N channel
  • Enhancement mode
  • Logic Level Pin 1 Pin 2 Pin 3 G S D Type VDS ID R DS(on) Package Marking BSS 131 240 V 0.1 A 16 Ω SOT-23 SRs Type Ordering Code Tape and Reel Information BSS 131 Q62702-S565 E6327 BSS 131 Q67000-S229 E6433 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 240 V Drain-gate voltage R GS = 20 kΩ VDGR 240 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Continuous drain current TA = 26 °C ID 0.1 A DC drain current, pulsed TA = 25 °C IDpuls 0.4 Power dissipation TA = 25 °C Ptot 0.36 W

Semiconductor Group 2 Sep-13-1996 BSS 131 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150°C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air R thJA ≤ 350 K/W Therminal resistance, chip-substrate- reverse side 1)R thJSR ≤ 285 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V(BR)DSS 240 - - V Gate threshold voltage VGS =VDS, ID = 1 mA VGS(th) 0.8 1.4 2 Zero gate voltage drain current VDS = 240 V, VGS = 0 V, Tj = 25 °C VDS = 240 V, VGS = 0 V, Tj = 125 °C VDS = 130 V, VGS = 0 V, Tj = 25 °C IDSS 0.1 1 µA nA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 1 10 nA Drain-Source on-state resistance VGS = 10 V, ID = 0.1 A VGS = 4.5 V, ID = 0.1 A R DS(on) Ω

Semiconductor Group 3 Sep-13-1996 BSS 131 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≥ 2 * ID * RDS(on)max, ID = 0.1 A gfs 0.06 0.14 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C iss - 60 80 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C oss - 8 1 2 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C rss - 3.5 5 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 0.26 A R GS = 50 Ω td(on) - 5 8 ns Rise time VDD = 30 V, VGS = 10 V, ID = 0.26 A R GS = 50 Ω tr - 8 1 2 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 0.26 A R GS = 50 Ω td(off) - 12 16 Fall time VDD = 30 V, VGS = 10 V, ID = 0.26 A R GS = 50 Ω tf - 15 20

Semiconductor Group 4 Sep-13-1996 BSS 131 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TA = 25 °C IS - - 0.1 A Inverse diode direct current,pulsed TA = 25 °C ISM - - 0.4 Inverse diode forward voltage VGS = 0 V, IF = 0.2 A, Tj = 25 °C VSD - 0.8 1.2 V

Semiconductor Group 5 Sep-13-1996 BSS 131 Power dissipation Ptot = ƒ(TA) 0 20 40 60 80 100 120 °C 160 TA 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 W 0.40 Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 °C 160 TA 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 A 0.11 ID Safe operating area ID =f(VDS ) parameter : D = 0.01, TC =25°C Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 Tj 215 220 225 230 235 240 245 250 255 260 265 270 275 V 285 V (BR)DSS

Semiconductor Group 6 Sep-13-1996 BSS 131 Typ. output characteristics ID = ƒ(VDS ) parameter: tp = 80 µs , Tj = 25 °C 0 1 2 3 4 5 6 7 8 V 10 VDS 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 A 0.24 ID VGS [V] a a 2.0 b b 2.5 c c 3.0 d d 3.5 e e 4.0 f f 4.5 g g 5.0 h h 6.0 i i 7.0 j j 8.0 k k 9.0 l P tot = 0W l 10.0 Typ. drain-source on-resistance R DS (on) = ƒ(ID ) parameter: tp = 80 µs, Tj = 25 °C ID Ω R DS (on) VGS [V] = a 2.0 VGS [V] = a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 6.0 h h 7.0 i i 8.0 j j 9.0 k k 10.0 Typ. transfer characteristics ID = f(VGS ) parameter: tp = 80 µs 0 1 2 3 4 5 6 7 8 V 10 V GS 0.00 0.04 0.08 0.12 0.16 0.20 0.24 A 0.32 ID Typ. forward transconductance gfs = f (ID ) parameter: tp = 80 µs, ID 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 S 0.24 gfs

7 Sep-13-1996Semiconductor Group

Drain-source on-resistance R DS (on) = ƒ(Tj) parameter: ID = 0.1 A, VGS = 10 V -60 -20 20 60 100 °C 160 Tj Ω R DS (on) typ 98% Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS , ID = 1 mA 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6 V GS(th) -60 -20 20 60 100 °C 160 Tj typ 98% Typ. capacitances C = f (VDS ) parameter:VGS =0V, f = 1 MHz 0 5 10 15 20 25 30 V 40 V DS 0 10 1 10 2 10 3 10 pF C C rss C oss C iss Forward characteristics of reverse diode IF = ƒ(VSD ) parameter: Tj, tp = 80 µs -3 10 -2 10 -1 10 0 10 A IF VSD Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Semiconductor Group 8 Sep-13-1996 BSS 131 Package outlines SOT-23 Dimensions in mm