BSS131

BSS131 INFINEON | Alldatasheet

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SIPMOS® Small-Signal-Transistor Feature

• N-Channel
• Enhancement mode
• Logic level
• dv /dt rated Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C 0.11 A T A=70 °C 0.09 Pulsed drain current I D,pulse T A=25 °C 0.4 Reverse diode dv /dt dv /dt I D=0.1 A, V DS=192 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±20 V ESD sensitivity (HBM) as per MIL-STD 883 Class 1 Power dissipation P tot T A=25 °C 0.36 W Operating and storage temperature T j, T stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Value V DS 240 V R DS(on),max 14 Ω I D 0.1 A Product Summary SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS131 SOT23 Q62702-S565 E6327 SRs BSS131 SOT23 Q67000-S229 E6433 SRs Rev. 2.0 page 1 2004-04-29

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - minimal footprint R thJA - - 350 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 240 - - V Gate threshold voltage V GS(th) V DS=0 V, I D=56 µA 0.8 1.4 1.8 Drain-source leakage current I D (off) V DS=240 V, V GS=0 V, T j=25 °C - - 0.01 µA V DS=240 V, V GS=0 V, T j=150 °C --5 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 10 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=0.09 A - 9.07 20 Ω V GS=10 V, I D=0.1 A - 7.7 14 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.08 A 0.06 0.13 - S Values Rev. 2.0 page 2 2004-04-29

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss -5 8 7 7 p F Output capacitance C oss - 7.3 10 Reverse transfer capacitance Crss - 2.8 4.2 Turn-on delay time t d(on) - 3.3 5.0 ns Rise time t r - 3.1 4.6 Turn-off delay time t d(off) - 13.7 20 Fall time t f - 64.5 97 Gate Charge Characteristics Gate to source charge Q gs - 0.16 0.22 nC Gate to drain charge Q gd - 0.8 1.2 Gate charge total Q g - 2.1 3.1 Gate plateau voltage V plateau - 2.90 - V Reverse Diode Diode continous forward current I S - - 0.11 A Diode pulse current I S,pulse - - 0.43 Diode forward voltage V SD V GS=0 V, I F=0.1 A, T j=25 °C - 0.81 1.2 V Reverse recovery time t rr - 42.9 64.3 ns Reverse recovery charge Q rr - 22.6 34 nC V R=120 V, I F=0.1 A, di F/dt =100 A/µs T A=25 °C Values V GS=0 V, V DS=25 V, f =1 MHz V DD=120 V, V GS=10 V, I D=0.1 A, R G=6 Ω V DD=192 V, I D=0.1 A, V GS=0 to 10 V Rev. 2.0 page 3 2004-04-29

1 Power dissipation 2 Drain current

P tot=f(T A) I D=f(T A); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 100 ms 30 µs 100 µs 1 ms 10 ms DC 100 10-1 10-2 10-3 1 10 100 1000 V DS [V] I D [A] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10110010-110-210-310-410-5 103 102 101 100 t p [s] Z thJA [K/W] 0.1 0.2 0.3 0.4 0 40 80 120 160 T A [°C] P tot [W] 0.02 0.04 0.06 0.08 0.1 0.12 0 40 80 120 160 T A [°C] I D [A] Rev. 2.0 page 4 2004-04-29

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 2.3 V 2.7 V 3.3 V 3.9 V 4.5 V 5 V 7 V 10 V 0 0.1 0.2 0.3 0.4 I D [A] R DS(on) [Ω] 0.1 0.2 0.3 0.4 01234 V GS [V] I D [A] 0.05 0.1 0.15 0.2 0.25 0.3 I D [A] g fs [S] 2.3 V 2.7 V 3.3 V 3.9 V 4.5 V 5 V 7 V 10 V 0.1 0.2 0.3 0.4 01234567 V DS [V] I D [A] Rev. 2.0 page 5 2004-04-29

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.1 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=56 µA parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j typ 98 % -60 -20 20 60 100 140 T j [°C] R DS(on) [Ω] typ 98 % 2 % 0.4 0.8 1.2 1.6 2.4 -60 -20 20 60 100 140 T j [°C] V GS(th) [V] Ciss Coss Crss 103 102 101 100 01 0 2 0 3 0 V DS [V] C [pF] 25 °C150 °C 25 °C, 98% 150 °C, 98% 100 10-1 10-2 10-3 V SD [V] I F [A] Rev. 2.0 page 6 2004-04-29

13 Typ. gate charge 14 Drain-source breakdown voltage V GS=f(Q gate); I D=0.1 A pulsed V BR(DSS)=f(T j); I D=250 µA parameter: V DD 200 210 220 230 240 250 260 270 280 290 300 -60 -20 20 60 100 140 T j [°C] V BR(DSS) [V]48 V 120V 192 V 0 0.5 1 1.5 2 2.5 Q gate [nC] V GS [V] Rev. 2.0 page 7 2004-04-29

Package Outline: Footprint: Packaging: Rev. 2.0 page 8 2004-04-29

St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 9 2004-04-29