BSS127I | DigiCamel IC Datasheet

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Small-Signal Transistor PG-SOT23-3 Features 3 * n-channel * enhancement mode + Logic level (4.5V rated) + dvidt rated 1 + 100%lead-free; RoHS compliant + Halogen-free according to IEC61249-2-21 2 Product validation Fully qualified according to JEDEC for Industrial Applications Drain Pin Table 1 Key Performance Parameters 7 a Ping J ESD Sensitivity, @ RoHS Bss1271 PG-SOT23 [oe Final Data Sheet 1 Rev. 2.1, 2021-03-17

Small-Signal Transistor Cinfi neon BSS1271 Table of Contents Package Outlines 2... cee ene e eee eee e eee e eee GD Final Data Sheet 2 Rev. 2.1, 2021-03-17

Small-Signal Transistor Cin Ineon BSS1271

1 Maximum ratings

at Ta=25 °C, unless otherwise specified Table 2__ Maximum ratings Paramet ymeot [—taues Note / Test Condit ‘arameter [Min. | lote esi ondition Typ. [Max Continuous drain current bh Ff f | oy eer 6 Pulsed drain current fiom fF foo [A | Taa25 °C Reverse diode dvidt dvidt | fF fe | kVis biateo00 Bike Te i60 °c = » Tmax Operating and storage temperature Tite [88 | it50 fo | IES climatic category;

2 Thermal characteristics

Table 3 Thermal characteristics Paramet symbol Note / Test Condit ‘arameter ymbo! [min. | jlote / Test Condition Typ. [Max Thermal resistance, junction - minimal om tt kw

3 Electrical characteristics

at Tj=25 °C, unless otherwise specified Table 4 __ Static characteristics Paramet symbol Note / Test Condit arameter ymbo! (min. | lote / Test Condition Typ. [Max Drain-source breakdown voltage [Veross [600 |- |- ‘|v__| Ves=0 V, Ip=250 pA Gate threshold voltage Vos=Ves, lo=8 YA Drain-source leakage current I (om) ot yA Vos=600 Vv, Ves=0 v, Tr25 “C

10 Vos=600 V, Ves=0 V, T=125 °C

Small-Signal Transistor Cin Ineon BSS1271 Table 5 Dynamic characteristics paramet symbol Note / Test Conditi ‘arameter yymbol [Min. | lote est Condition Typ. |[Max.__ Input capacitance [ese t+ |p| Vos 0V, Vos=25 V, 1 MHz Output capacitance Se Ves=0 V, Vos=25 V, f&1 MHz Reverse transfer capacitance Ics etc pF Ves=0 V, Vos=25 V, f&1 MHz ee ox ox rears nm ag ew xt ext Table 6 Gate charge characteristics Paramet symbol Note / Test Condit ‘arameter ymbol [Min. | ote est Condition Typ. |Max.__ Gate to source charge la, - ——fo.o7_[- nC __| Voo=300 V, f=0.01 A, Vos=0 to 10V Gate to drain charge lac [- —fost (- [nc | Voo=300 V, /o=0.01 A, Ves=0 to 10 V Gate charge total la ss foes |- [nC _ | Voo=300 V, 100.01 A, Vos=0 to 10 V Gate plateau voltage [Vaeen |- (3.86 |- v__| Von=300 V, /o=0.01 A, Ves=0 to 10 V Table 7 Reverse diode Paramet yma [ae Note / Test Conditi ‘arameter lote est Condition [min. [Typ [Max._| Diode continous forward current ls | | | 0.016 Ta=25 °C Diode pulse current liso (> __—i| _——ifo.o9_[a_| TA=25 °C Diode forward voltage [vo |-_—(fo.82 [4.2 |V__ | Vos=0 V, Ie=0.016 A, T=25 °C Final Data Sheet 4 Rev. 2.1, 2021-03-17

Small-Signal Transistor ¢ In fi neon BSS1271

4 Electrical characteristics diagrams

06 0.030 -—7 7. > Nee ——— we t+ KET | TT TY... REFER Li IN | tT ft ——— ge | NETTIE) k,,. == a7 7 ONL ee SSS ee TOF | oe SES ESS AS i —— “TT TNT | oO ES SS oe X a CC ew ff 0.0 0.000 0 40 80 120 160 0 40 80 120 160 Ta [°C] Ta [°C] 10" ee ee 0 ER Scr Seer) erat Seer) Seen cea cers errr re SF 40 ps] =e ves | | SEE Ho ust TT TT oo Co a 0 aS COT on on oT COMI ZENS ROT |, Hoel tS It AL UNUIN N 2 ERTMICCIMIC LM Loser TT | to" UI NIRS Se sa Se ctl Sa Be Sth Stat SEEN ERNE [3 no, a 00 | | | oe 21 or Ne 0 TT TT TTT gS Ne ss Mi zo ee A 0 0 0 Va | Nl FT woe CoE Ne Peres Tt LE COT TT TT TTT TTT oe LUTE CI EET). ECT TOT 10° 10° vi ™ 107 10° 10° 10+ 10° 107 iis] 10° 10° 10? 10° Final Data Sheet 5 Rev. 2.1, 2021-03-17

Small-Signal Transistor ¢ In fi neon BSS1271 Diagram 6: Typ. drain-source on resistance 0.030 1000 tt E ETE Tt Ty feet det Pt fd os YA) ay se || tt | La | ttt | | Aw

0.020 LAAT |

0.010 Yy Y La

froseree | eL EEE EE ann ‘~G “TETT TTT TTT D 4a ASeeretr ter! ttt ttt ttl com ZL 128% : Vos [V] fo fA] Ib=f(Vos); Tj=25 °C; parameter: Ves Roston=t(lo); Ti=25 °C; parameter: Ves “TLE | TEE TUTTI TTT Ty] | pt yt te 0.020 / 0.020 > TEEPE TTA |) LEE | ee TUT ET TTA TY ef ft PP 0.015 0.015 | ef) ft yi) Ete oo +t tT tte tT i Eee ET tT a / EERE EE ES / ACER EES TUTTE TT Ty, f | | tt ttt 0.000 4 0.000 Ves [V] ofA] TVs) a a Ris Final Data Sheet 6 Rev. 2.1, 2021-03-17

Small-Signal Transistor Cinfineon BSS1271 1000 3.5 CEPTrrrrrerrry

9 EEE EEE LTT TTT ety yt yy

CeeePrerereeyey) | tT TT TE oot | Trrrr yy ry Imet Tt Tt ey yt a, 2 2. = 700 5 —_| re Ij} } | | Pee et OY | ao | ER ee PT Pe oC OAC Pap RR A VA J 3 Eo let COE Bott ett Set oe Pa Pr Pi} eT eT yey re Ler Ep pb “CETTE yy om LZ leet > rrr yrs) | | TET TT TT wo LI Eee a A i ott rrrrryererery] Titi tt ttt i i -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 TPC) TPC) ee ——— qs SS ES CS []J— — 25°C, max FO So =~ ERE ES NEE 1" - -4 [TTTrti tt tt tt yy NESE eee ’ ee 4 — —$ , FF FF ‘== === | ° SSS SS jC Cer eS oe Cc SS 0008] — _ A yee Oa es a ~ SRE Ee Tr) Oe [TT aie SS ES CS a Ss HS EEE EEA EEE Lt [| | | ft | ft ft ft LIT ETRIAT TT PT PP ew ti tT EEE Ty) LEE 0 5 10 15 20 25 0.0 04 08 1.2 1.6 2.0 24 28 Vos [V] Vso [V] Final Data Sheet 7 Rev. 2.1, 2021-03-17

Small-Signal Transistor In ineon BSS1271 Diagram 13: Typ. gate charge Diagram 14: Drain-source breakdown voltage 10 700 [TT TTT T{TTT Vi tA TIA Lt | [| | | | TT | tT ott TTT ti tA T Vt | sol | tt tT i tt i ft tt LTT Titi tt yt yt tA [| | {| | | | | tt Pt 8 tT AL 7 scot | tT tT i tT tt yy SEEEEEEACEEYE | EEE eo 7 640 [TT Titi {TAT Vit Yt ft | [| | | | | | yy tT tt 6 +44 ttt t t0yt foeo vt cot | Ti | |} wit tt tT = Ceece eA 2. eee f Z| 5 g 600 L $8 EP TTT VTA TIA TTT jg EP ty pap att TTA TVTT Viti ty le ,f PT Pert tt tt PT Lio se 2 [FIT TTT TTT ttt tt tt [7] | [| | | | | | | tT ae a sot|t[ | | | tT tT tt tt [AT TT TTT ee Tt Tt TT [| | | | tT | TT | tT ifEtetT titi rire rite sol | | | | | tT tT tt tt Prete eee et ye ee tt [| | {| | | | | tt tt of LT TT TT Ti ty ty ttt | sol | [| | [| Tt tT | Tt tT Qaate [NC] TPC] Ves=f(Qgate); 2=0.01 A pulsed Varioss)=f(T)); fo=250 pA Ves Final Data Sheet 8 Rev. 2.1, 2021-03-17

Small-Signal Transistor Cinfi neon BSS1271

5 Package Outlines

A D Al ! | i lt Ee ce SS |

1 E ; 2 E - fr

[e] || b [| c g | howe YP PG-SOT23-3-U01 pA oso 2 pat Toor oto ee a ee ee ee ee poe fos poet 90 a Lo Figure 1 Outline PG-SOT23, dimensions in mm Final Data Sheet 9 Rev. 2.1, 2021-03-17

—_— I fi Small-Signal Transistor n Ineon BSSt27h

Revision History

Revision: 2021-03-17, Rev. 2.1 Previous Revision Revision [Date __| Subjects (major changes since last revision) 2.0 2021-01-25 |Release of final version 21 2021-03-17 |Update technology naming Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG

81726 Miinchen, Germany

© 2020 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (‘Beschaffenheitsgarantie’) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 10 Rev. 2.1, 2021-03-17

Product Information

BSS127I specifications and overview.

Summary

Small-Signal Transistor 2021-03-17 revision:2.1

Description

Small-Signal Transistor 2021-03-17 revision:2.1

Source title BSS127I Datasheet(PDF) - Infineon Technologies AG

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